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    Edge-emitting semiconductor laser and method for the production thereof
    2.
    发明授权
    Edge-emitting semiconductor laser and method for the production thereof 有权

    公开(公告)号：US09812844B2

    公开(公告)日：2017-11-07

    申请号：US14895542

    申请日：2014-06-17

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Alvaro Gomez-Iglesias ,  Harald König ,  Christian Lauer

    IPC分类号： H01S5/20 ,  H01S5/10 ,  H01S5/32

    CPC分类号： H01S5/2031 ,  H01S5/1014 ,  H01S5/1082 ,  H01S5/209 ,  H01S5/3213 ,  H01S2301/18

    摘要： An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.

    SEMICONDUCTOR LASER DEVICE
    3.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权

    公开(公告)号：US20170117685A1

    公开(公告)日：2017-04-27

    申请号：US15160249

    申请日：2016-05-20

    申请人： Mitsubishi Electric Corporation

    发明人： Kimio SHIGIHARA

    IPC分类号： H01S5/20 ,  H01S5/22

    CPC分类号： H01S5/2031 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/34313

    摘要： An active layer is provided on a side closer to the second conductivity type cladding layer than a center of the light guide layer in the light guide layer. A first conductivity type low-refractive-index layer is formed between the first conductivity type cladding layer and the light guide layer and has a refractive index which is lower than a refractive index of the first conductivity type cladding layer. A layer thickness d of the light guide layer is a value at which a high-order mode equal to or higher than a first-order mode is permissible in a crystal growing direction by satisfying 2  π λ  n g 2 - n c 2  d 2 ≧ π 2 . The active layer is disposed at a position where a light confinement of the active layer becomes smaller compared to a case in which the active layer is disposed at a center of the light guide layer while there is not the first conductivity type low-refractive-index layer.

    AlGaInP-BASED SEMICONDUCTOR LASER
    5.
    发明申请
    AlGaInP-BASED SEMICONDUCTOR LASER 审中-公开
    基于AlGaInP的半导体激光器

    公开(公告)号：US20170012410A1

    公开(公告)日：2017-01-12

    申请号：US15210904

    申请日：2016-07-15

    申请人： USHIO OPTO SEMICONDUCTORS, INC.

    发明人： Masato HAGIMOTO ,  Haruki FUKAI ,  Tsutomu KIYOSUMI ,  Shinji SASAKI ,  Satoshi KAWANAKA

    IPC分类号： H01S5/32 ,  H01S5/343 ,  H01S5/30 ,  H01S5/022 ,  H01S5/22

    CPC分类号： H01S5/3213 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34326 ,  H01S2301/18

    摘要： An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9

    摘要翻译： 提供了一种基于铝镓铟磷（AlGaInP）的半导体激光器件。 在由n型GaAs（砷化镓）形成的半导体衬底的主表面上，从底层开始，形成n型缓冲层，由含硅（Si）的AlGaInP基半导体形成的n型覆层， 形成掺杂剂，活性层，由含有镁（Mg）或锌（Zn）作为掺杂剂的AlGaInP系半导体形成的p型包覆层，蚀刻停止层和p型接触层。 这里，当将AlGaInP基半导体的Al组成比x作为（Al x Ga 1-x）0.5 In 0.5 P定义为Al和Ga的组成比时，将n型包覆层的组成表示为（Al x Ga 1 -xn）0.5In0.5P（0.9

    Optical cladding layer design
    6.
    发明授权
    Optical cladding layer design 有权
    光学包层设计

    公开(公告)号：US09509122B1

    公开(公告)日：2016-11-29

    申请号：US13597701

    申请日：2012-08-29

    申请人： Erik Norberg ,  Anand Ramaswamy ,  Brian Koch

    发明人： Erik Norberg ,  Anand Ramaswamy ,  Brian Koch

    IPC分类号： H01L31/0328 ,  H01S5/32

    CPC分类号： H01L31/0304 ,  H01L31/02327 ,  H01L31/0328 ,  H01L31/109 ,  H01S5/021 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/3211 ,  H01S5/3213 ,  Y02E10/544

    摘要： Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

    摘要翻译： 本发明的实施例描述了与使用光学包层相关的装置，光学系统和方法。 根据一个实施例，混合光学器件包括硅半导体层和具有重叠区域的III-V半导体层，其中重叠区域中的光学模式的大部分场域将包含在III-V半导体中 层。 硅半导体层和III-V半导体层之间的包层区域具有空间特性，以将光学模式基本上限制于III-V半导体层，并且能够通过硅半导体层进行散热。

    Laser diode with high efficiency
    7.
    发明授权
    Laser diode with high efficiency 有权
    激光二极管效率高

    公开(公告)号：US09343873B2

    公开(公告)日：2016-05-17

    申请号：US13823277

    申请日：2011-09-12

    申请人： Paul Crump ,  Goetz Erbert ,  Hans Wenzel

    发明人： Paul Crump ,  Goetz Erbert ,  Hans Wenzel

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  A61B18/20 ,  A61B18/00 ,  A61B19/00 ,  H01S5/32

    CPC分类号： H01S5/20 ,  A61B18/203 ,  A61B2018/00476 ,  A61B2090/049 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3213 ,  H01S2301/185

    摘要： It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 μm≦dwL≦1.0 μm and Δn≧0.04, where dwL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and Δn is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).

    摘要翻译： 本发明的目的是同时具有高效率和高眼睛安全性的光源。 为此，应设计有源层（10），第一覆层（14），第一波导层（12），第二波导层（16）和第二覆层（18），使得0.01μm＆ ; dwL＆nlE;1.0μm和＆Dgr;n≥0.04，其中dwL是第一波导层（12）的层厚度的总和，有源层（10）的层厚度和第二波导的层厚度 层（16）和＆Dgr; n是第一包层（14）和第一波导层（12）之间的折射率差的最大值和第二波导层（16）与第二包层之间的折射率差 （18）。