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    Semiconductor laser element and method for manufacturing the same
    2.
    发明授权
    Semiconductor laser element and method for manufacturing the same 有权

    公开(公告)号：US11881684B2

    公开(公告)日：2024-01-23

    申请号：US17685820

    申请日：2022-03-03

    Applicant: NICHIA CORPORATION

    Inventor： Yoshitaka Nakatsu

    IPC: H01S5/343 ,  H01S5/20 ,  H01S5/22 ,  H01S5/042

    CPC classification number: H01S5/34333 ,  H01S5/04253 ,  H01S5/2031 ,  H01S5/2206 ,  H01S5/34346 ,  H01S5/2009 ,  H01S2304/04

    Abstract: A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.

    Semiconductor laser element and method of manufacturing semiconductor laser element
    7.
    发明授权
    Semiconductor laser element and method of manufacturing semiconductor laser element 有权

    公开(公告)号：US09774169B2

    公开(公告)日：2017-09-26

    申请号：US15363712

    申请日：2016-11-29

    Applicant: NICHIA CORPORATION

    Inventor： Yoshitaka Nakatsu

    IPC: H01S5/34 ,  H01S5/30 ,  H01S5/343

    CPC classification number: H01S5/3409 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A semiconductor laser element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, layered upward in this order, each being made of a nitride semiconductor. The active layer includes one or more well layers, and an n-side barrier layer located lower than the one or more well layers. The n-side semiconductor layer includes a composition-graded layer located in contact with the n-side barrier layer. The composition-graded layer has a band-gap energy that decreases toward an upper side of the composition-graded layer, with a band-gap energy of the upper side being smaller than a band-gap energy of the n-side barrier layer. The composition-graded layer has an n-type dopant concentration greater than 5×1017/cm3 and less than or equal to 2×1018/cm3. The n-side barrier layer has an n-type dopant concentration greater than that of the composition-graded layer and a thickness smaller than that of the composition graded layer.

    Multi-Color Light Emitting Structures with Fixed or Variable Emission Color
    10.
    发明申请
    Multi-Color Light Emitting Structures with Fixed or Variable Emission Color 审中-公开
    具有固定或可变发光颜色的多色发光结构

    公开(公告)号：US20160359299A1

    公开(公告)日：2016-12-08

    申请号：US15173500

    申请日：2016-06-03

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

    IPC: H01S5/20 ,  H01S5/10 ,  H01S5/343 ,  H01L33/06 ,  H01L33/30

    CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

    Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

    Abstract translation: 本文公开了用于掺入中间载体阻挡层的半导体发光器件（LED）的多层光学活性区域，所述中间载体阻挡层具有用于组合物和掺杂水平的设计参数，以提供对横跨载流子阻挡层的载流子注入分布的有效控制 活性区域以实现期望的器件注入特性。 本文中讨论的实施例的示例包括：在可见光范围内操作的全部覆盖RGB色域的多量子阱可变颜色LED，在可见光范围内工作的多量子阱可变颜色LED，具有扩展 超出标准RGB色域的色域，具有可变色温的多量子阱发光白光LED，以及具有均匀填充的有源层的多量子阱LED。

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