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公开(公告)号：US20220122941A1
公开(公告)日：2022-04-21
申请号：US17483076
申请日：2021-09-23
Applicant: STMicroelectronics PTE LTD
Inventor： Chun Yi TENG , David GANI
IPC: H01L23/00 , H01L21/768 , H01L21/78
Abstract: Trenches are opened from a top surface of a production wafer that extend down through scribe areas to a depth that is only partially through a semiconductor substrate. Prior to performing a bumping process, a first handle is attached to the top surface of the production wafer. A back surface of the semiconductor substrate is then thinned to reach the trenches and form a wafer level chip scale package at each integrated circuit location delimited by the trenches. A second handle is then attached to a bottom surface of the thinned semiconductor substrate, and the first handle is removed to expose underbump metallization pads at the top surface. The bumping process is then performed to form a solder ball at each of the exposed underbump metallization pads.
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公开(公告)号：US11257679B2
公开(公告)日：2022-02-22
申请号：US16690673
申请日：2019-11-21
Applicant: STMICROELECTRONICS PTE LTD
Inventor： Tien Choy Loh
IPC: H01L21/3065 , H01L21/02 , H01L21/67
Abstract: One or more embodiments are directed to methods of removing a sacrificial layer from semiconductor wafers during wafer processing. In at least one embodiment, the sacrificial layer is removed from a wafer during an O2 plasma etch step. In one embodiment, the sacrificial layer is poly(p-phenylene-2, 6-benzobisoxazole) (PBO) or polyimide. The O2 plasma etch step causes a residue to form on the wafer. The residue is removed by immersing the wafer a solution that is a mixture of the tetramethylammonium hydroxide (TMAH) and water.
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公开(公告)号：US11211254B2
公开(公告)日：2021-12-28
申请号：US17096434
申请日：2020-11-12
Applicant: STMicroelectronics Pte Ltd
Inventor： Yuzhan Wang , Pradeep Basavanahalli Kumarswamy , Hong Kia Koh , Alberto Leotti , Patrice Ramonda
IPC: H01L21/3105 , H01L21/762 , H01L21/768
Abstract: A first dielectric layer made of a first dielectric material is deposited over a semiconductor substrate. A buffer layer is then deposited on an upper surface of the first dielectric layer. A trench is opened to extend through the buffer layer and the first dielectric layer. A second dielectric layer made of a second dielectric material is the deposited in a conformal manner on the buffer layer and filling the trench. Chemical mechanical polishing of the second dielectric layer is performed to remove overlying portions of the second dielectric layer with the buffer layer being used as a polish stop. After removing the buffer layer, the first dielectric layer and the second dielectric material filling the trench form a pre-metallization dielectric layer having a substantially planar upper surface.
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公开(公告)号：US20210382197A1
公开(公告)日：2021-12-09
申请号：US17411948
申请日：2021-08-25
Inventor： Wing Shenq WONG , Andy PRICE , Eric CHRISTISON
IPC: G01V8/12 , H01L25/16 , H01L31/167
Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
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公开(公告)号：US20210376061A1
公开(公告)日：2021-12-02
申请号：US17236149
申请日：2021-04-21
Applicant: STMicroelectronics Pte Ltd
Inventor： Yean Ching YONG
IPC: H01L29/06 , H01L29/51 , H01L29/78 , H01L21/762 , H01L21/477
Abstract: An integrated circuit includes a polysilicon region that is doped with a dopant. A portion of the polysilicon region is converted to a polyoxide region which includes un-oxidized dopant ions. A stack of layers overlies over the polyoxide region. The stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O3 SACVD) TEOS layer; and a second O3 SACVD TEOS layer; wherein the first and second O3 SACVD TEOS layers are separated from each other by a dielectric region. A thermally annealing is performed at a temperature which induces outgassing of passivation atoms from the first and second O3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.
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Patent Agency Ranking
公开(公告)号：US20210327863A1
公开(公告)日：2021-10-21
申请号：US17360925
申请日：2021-06-28
Applicant: STMICROELECTRONICS PTE LTD
Inventor： David GANI
IPC: H01L25/16 , G01S17/04 , H01S5/02325 , H01L21/768 , H01L23/48 , H01L31/02 , H01L31/167 , H01L31/18 , H04M1/02
Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.
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公开(公告)号：US11069667B2
公开(公告)日：2021-07-20
申请号：US15087959
申请日：2016-03-31
Applicant: STMicroelectronics Pte Ltd
Inventor： David Gani
IPC: H01L25/16 , H01L21/768 , H01L23/48 , H01L31/02 , H01L31/167 , H01L31/18 , H01S5/022 , H04M1/02 , G06F3/041 , G01S17/04 , H01S5/02325
Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.
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公开(公告)号：US10910287B2
公开(公告)日：2021-02-02
申请号：US16270927
申请日：2019-02-08
Applicant: STMICROELECTRONICS PTE LTD
Inventor： Yun Liu , David Gani
Abstract: A semiconductor package having a die with a sidewall protected by molding compound, and methods of forming the same are disclosed. The package includes a die with a first surface opposite a second surface and sidewalls extending between the first and second surfaces. A redistribution layer is formed on the first surface of each die. An area of the first surface of the die is greater than an area of the redistribution layer, such that a portion of the first surface of the die is exposed. When molding compound is formed over the die and the redistribution layer to form a semiconductor package, the molding compound is on the first surface of the die between an outer edge of the redistribution layer and an outer edge of the first surface. The molding compound is also on the sidewalls of the die, which provides protection against chipping or cracking during transport.
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公开(公告)号：US20200381320A1
公开(公告)日：2020-12-03
申请号：US16880684
申请日：2020-05-21
Applicant: STMicroelectronics PTE LTD
Inventor： Jing-En LUAN
Abstract: A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.
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公开(公告)号：US20200301042A1
公开(公告)日：2020-09-24
申请号：US16890778
申请日：2020-06-02
Inventor： Wing Shenq WONG , Andy PRICE , Eric CHRISTISON
IPC: G01V8/12 , H01L25/16 , H01L31/167
Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
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