公开(公告)号：US20250022919A1

公开(公告)日：2025-01-16

申请号：US18781808

申请日：2024-07-23

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNÀ ,  Paolo BADALÀ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US12197557B2

公开(公告)日：2025-01-14

申请号：US17454231

申请日：2021-11-09

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Rousset) SAS

Inventor： Antonino Mondello ,  Stefano Catalano ,  Cyril Pascal

IPC: G06F21/44 ,  G06F11/10 ,  H04L9/32

Abstract: According to one aspect, a system-on-a-chip is proposed which includes a memory storage, a computation circuit, a comparison circuit, and a validation circuit. The memory storage is configured to store an external software module. The computation circuit is configured to compute several modified software modules from the external software module and compute check values by iteration until obtaining a final check value. Each check value is computed at least from a given modified software module and a check value previously computed, starting with a predefined initial check value. The comparison circuit is configured to compare the final check value to an expected value stored in the system-on-a-chip. The validation circuit is configured to validate the external software module when the final check value is equal to the expected value.

公开(公告)号：US12196730B2

公开(公告)日：2025-01-14

申请号：US18485072

申请日：2023-10-11

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Malek Brahem ,  Hatem Majeri ,  Olivier Le Neel ,  Ravi Shankar ,  Enrico Rosario Alessi ,  Pasquale Biancolillo

IPC: G01N33/00 ,  G01N27/02 ,  G01N27/12

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

公开(公告)号：US20250015708A1

公开(公告)日：2025-01-09

申请号：US18218750

申请日：2023-07-06

Applicant: STMicroelectronics S.r.l. ,  Politecnico Di Milano

Inventor： Lorenzo CREMONESI ,  Paolo MELILLO ,  Alessandro GASPARINI ,  Massimo GHIONI ,  Salvatore LEVANTINO

IPC: H02M1/088 ,  H02M3/158

Abstract: Disclosed herein is a DC-DC converter, including a high-side power switch coupled between an input voltage and a switched node and a low-side power switch coupled between the switched node and ground. An inductor is coupled between the switched node and an output node. An output capacitor is coupled between the output node and ground. A control circuit is configured to operate the high-side power switch in a constant charge mode of operation to vary on-time of the high-side power switch to maintain a constant amount of charge being transferred to the output capacitor during each charging cycle, independent of variation of the input voltage.

公开(公告)号：US12187600B2

公开(公告)日：2025-01-07

申请号：US17903473

申请日：2022-09-06

Applicant: STMicroelectronics S.r.l.

Inventor： Domenico Giusti ,  Carla Maria Lazzari

IPC: H01L41/04 ,  B81B3/00 ,  F04B43/04

Abstract: A MEMS actuator includes a semiconductor body with a first surface defining a housing cavity facing the first surface and having a bottom surface, the semiconductor body further defining a fluidic channel in the semiconductor body with a first end across the bottom surface. A strainable structure extends into the housing cavity, is coupled to the semiconductor body at the bottom surface, and defines an internal space facing the first end of the fluidic channel and includes at least a first and a second internal subspace connected to each other and to the fluidic channel. When a fluid is pumped through the fluidic channel into the internal space, the first and second internal subspaces expand, thereby straining the strainable structure along the first axis and generating an actuation force exerted by the strainable structure along the first axis, in an opposite direction with respect to the housing cavity.

公开(公告)号：US20250008847A1

公开(公告)日：2025-01-02

申请号：US18884913

申请日：2024-09-13

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi

IPC: H10N70/20 ,  G11C13/00 ,  H01L23/528 ,  H10B63/00 ,  H10N70/00

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

公开(公告)号：US12175024B2

公开(公告)日：2024-12-24

申请号：US18048360

申请日：2022-10-20

Applicant: STMicroelectronics S.r.l.

Inventor： Stefano Paolo Rivolta ,  Federico Rizzardini

IPC: G06F3/0346 ,  G06F3/0354

Abstract: A method includes receiving electrostatic sensor data in a processor of an electronic device from an electrostatic sensor mounted behind a touchscreen of the electronic device and using the electrostatic sensor data to determine when the touchscreen is being used. Based on whether or not the touchscreen is being used, an on-table detection (OTD) algorithm is selected from a plurality of available OTD algorithms. In one or more examples, the OTD algorithm may also be selected based on the current device mode of the electronic device, which may be determined from a lid angle, a screen angle, and a keyboard angle of the electronic device. The selected OTD algorithm is run to determine whether or not the electronic device is located on a stationary or stable surface.

公开(公告)号：US12165880B2

公开(公告)日：2024-12-10

申请号：US17550747

申请日：2021-12-14

Applicant: STMicroelectronics S.r.l.

Inventor： Fulvio Vittorio Fontana ,  Michele Derai

IPC: H01L21/48 ,  H01L21/78 ,  H01L23/495

Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

公开(公告)号：US12165871B2

公开(公告)日：2024-12-10

申请号：US17083181

申请日：2020-10-28

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/778 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66

Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.

公开(公告)号：US12164705B2

公开(公告)日：2024-12-10

申请号：US18059214

申请日：2022-11-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Federico Rizzardini ,  Lorenzo Bracco

IPC: G01B7/30 ,  G06F3/0346

Abstract: A device includes a memory and processing circuitry coupled to the memory. The processing circuitry, in operation: estimates an angular rate of change and determines a rotational versor based on the rotational data; and estimates a gravity vector based on the angular rate of change and the rotational versor. The processing circuitry generates a dynamic gravity vector based on the estimated gravity vector, a correction factor and an estimated error in estimated gravity vector. The processing circuitry estimates a linear acceleration and determines an acceleration versor based on the acceleration data, and determines the correction factor based on the linear acceleration. The processing circuitry estimates the error in the estimated gravity vector based on the acceleration versor.