公开(公告)号：US20080023694A1

公开(公告)日：2008-01-31

申请号：US11492080

申请日：2006-07-25

Applicant: Seok-Woon Lee ,  Sung-Soo Park ,  Biing-Seng Wu

Inventor： Seok-Woon Lee ,  Sung-Soo Park ,  Biing-Seng Wu

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC classification number: H01L27/3244 ,  H01L27/3246 ,  H01L27/3248

Abstract: A display device and a method of manufacturing the same are provided. The display device comprises a substrate, a light-emitting element and a switch element. The substrate has a substrate upper surface and a recess region lower than the substrate upper surface. The light-emitting element comprises a first electrode, a light-emitting layer and a second electrode. The first electrode is disposed on the recess region. The light-emitting layer is disposed on the first electrode. The second electrode is disposed on the light-emitting layer. The switch element is disposed on the substrate upper surface and electrically connected to the light-emitting element.

Abstract translation: 提供一种显示装置及其制造方法。 显示装置包括基板，发光元件和开关元件。 衬底具有衬底上表面和低于衬底上表面的凹陷区域。 发光元件包括第一电极，发光层和第二电极。 第一电极设置在凹部区域上。 发光层设置在第一电极上。 第二电极设置在发光层上。 开关元件设置在基板上表面上并与发光元件电连接。

公开(公告)号：US20070235730A1

公开(公告)日：2007-10-11

申请号：US11695804

申请日：2007-04-03

Applicant: Seok-Woon LEE ,  Sung-Soo PARK ,  Biing-Seng WU

Inventor： Seok-Woon LEE ,  Sung-Soo PARK ,  Biing-Seng WU

IPC: H01L29/08

CPC classification number: H01L27/3253

Abstract: An organic light emitting device (OLED) is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors electrically connected to each other and, for each subpixel, a first connecting electrode electrically connected to one of the transistors. Each subpixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed in the non light-emitting region and electrically connected to the respective first connecting electrode.

Abstract translation: 有机发光器件（OLED）通过组装第一衬底和第二衬底而形成。 第二基板包括若干子像素。 第一基板包括彼此电连接的多个晶体管，并且对于每个子像素，电连接到晶体管之一的第一连接电极。 每个子像素包括发光区域和非发光区域。 第二连接电极形成在非发光区域中并电连接到相应的第一连接电极。

公开(公告)号：US06727121B2

公开(公告)日：2004-04-27

申请号：US10053277

申请日：2002-01-18

Applicant: Seung Ki Joo ,  Seok-Woon Lee

Inventor： Seung Ki Joo ,  Seok-Woon Lee

IPC: H01L2100

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66772 ,  H01L29/78609 ,  H01L29/78654

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract translation: 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过由MILC结晶化的多晶区域过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。

公开(公告)号：US06692996B2

公开(公告)日：2004-02-17

申请号：US09826438

申请日：2001-04-04

Applicant: Seok Woon Lee ,  Seung Ki Joo

Inventor： Seok Woon Lee ,  Seung Ki Joo

IPC: H01L2100

CPC classification number: H01L21/02672 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract translation: 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过从MILC结晶的多晶区域中过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。

公开(公告)号：US06586287B2

公开(公告)日：2003-07-01

申请号：US10113351

申请日：2002-04-01

Applicant: Seung Ki Joo ,  Seok-Woon Lee

Inventor： Seung Ki Joo ,  Seok-Woon Lee

IPC: H01L2100

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.