Abstract:
Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.
Abstract:
A laser system which produces multiline emissions simultaneously and which is adapted for use in optical data processing systems. In particular, in a first embodiment, a unitary positive column laser comprises two sections, the first section comprising a positive column helium-cadmium laser, the second section comprising a positive column helium-neon laser, the first and second sections being in tandem. Each section may be excited separately such that optimum excitation for red laser light, produced by the helium-neon section, and blue laser light, produced by the helium-cadmium section, can be independently controlled. The present system also allows separate cadmium vapor pressure control by separately controlling the vaporization temperature of the cadmium and also allows confinement of the cadmium vapor whereby the vapor does not contaminate one of the optical windows which confines the active laser medium. By proper selection of the optical cavity parameters, simultaneous red and blue laser oscillations can be obtained for application in any optical data processing system that requires a red and blue laser radiation source. In a second embodiment, the helium-cadmium section is replaced by with a helium-selenium section whereby the tandem laser system is capable of producing multiline laser radiation in the red, blue and green colors.
Abstract:
A radiation emission device characterized by a cylindrical cathode enclosed by an elongated envelope having a body section and two end sections is disclosed. The device includes an anode terminal, coupled to the body section, which serves to provide electrical energy to excite metallic material inside the envelope. The device further includes a pair of cataphoresis terminals located along each end section to prevent the excited metallic material from drifting into contact with radiation transmission windows located at the terminus of each end section.
Abstract:
A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.