公开(公告)号：US20130342103A1

公开(公告)日：2013-12-26

申请号：US13532034

申请日：2012-06-25

Applicant: Shing-Chung WANG ,  Hao-Chung KUO ,  Hsin-Chu CHEN ,  Kuo-Ju CHEN

Inventor： Shing-Chung WANG ,  Hao-Chung KUO ,  Hsin-Chu CHEN ,  Kuo-Ju CHEN

IPC: H01J1/70 ,  H01J9/22

CPC classification number: H01L33/508 ,  H01J1/70 ,  H01J9/22 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.

公开(公告)号：US08993409B2

公开(公告)日：2015-03-31

申请号：US13414944

申请日：2012-03-08

Applicant: Tien-Chang Lu ,  Huei-Min Huang ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Tien-Chang Lu ,  Huei-Min Huang ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/20 ,  H01L2933/0083

Abstract: A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.

Abstract translation: 提供了一种在半导体光学器件内制造空气介质层的方法。 方法的步骤包括提供衬底，在衬底上形成GaN薄膜，在GaN薄膜上形成牺牲层，在牺牲层上形成含氮化物的半导体层。 半导体光学器件用酸性溶液浸渍以去除牺牲层的部分以在残留牺牲层周围形成空气介质层。

公开(公告)号：US07974324B2

公开(公告)日：2011-07-05

申请号：US12708665

申请日：2010-02-19

Applicant: Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01S5/00

CPC classification number: H01S5/187 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/34313

Abstract: A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.

Abstract translation: 表面发射激光器件包括：衬底; 具有折射率nL的低折射率层并且设置在基板上; 具有折射率nH的发光层状结构，其中nH> nL，发光层状结构形成在低折射率层上并具有第一和第二半导体层以及多量子阱（MQW），其设置在第一和第二半导体层之间 第二半导体层并且能够产生具有波长λ0的光子; 以及在发光层状结构中形成并具有以晶格常数a布置成周期性图案的光学纳米结构的二维光子晶体（2DPC）。 纳米结构从第一半导体层延伸通过MQW。 2DPC具有归一化频率，其被定义为a /λ0，范围从0.25到0.70。

公开(公告)号：US20110044365A1

公开(公告)日：2011-02-24

申请号：US12708665

申请日：2010-02-19

Applicant: Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01S5/34 ,  H01S5/323

CPC classification number: H01S5/187 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/34313

Abstract: A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.

Abstract translation: 表面发射激光器件包括：衬底; 具有折射率nL的低折射率层并且设置在基板上; 具有折射率nH的发光层状结构，其中nH> nL，发光层状结构形成在低折射率层上并具有第一和第二半导体层以及多量子阱（MQW），其设置在第一和第二半导体层之间 第二半导体层并且能够产生具有波长λ0的光子; 以及在发光层状结构中形成并具有以晶格常数a布置成周期性图案的光学纳米结构的二维光子晶体（2DPC）。 纳米结构从第一半导体层延伸通过MQW。 2DPC具有归一化频率，其被定义为a /λ0，范围从0.25到0.70。

公开(公告)号：US07888144B2

公开(公告)日：2011-02-15

申请号：US11984562

申请日：2007-11-20

Applicant: Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

Inventor： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L33/10 ,  H01L33/44

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract translation: 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。

公开(公告)号：US20070128743A1

公开(公告)日：2007-06-07

申请号：US11328022

申请日：2006-01-09

Applicant: Gensheng Huang ,  Hsin-Hung Yao ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Gensheng Huang ,  Hsin-Hung Yao ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/02165 ,  H01L33/06 ,  H01L33/105 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3216 ,  H01S5/32341

Abstract: To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.

Abstract translation: 为了解决现有技术中使用的分布式布拉格反射器（DBR）中的现有问题，本发明提供了一种用于垂直腔表面发射激光器（VCSEL）的III族氮化物基分布布拉格反射器（DBR）的制造方法，其抑制了发生 的裂纹，以及具有高反射率，宽阻带和对诸如垂直腔表面发射激光器，微腔发光二极管，共振腔发光二极管和光电检测器的光学装置的适应性的分布式布拉格反射器。

公开(公告)号：US4021845A

公开(公告)日：1977-05-03

申请号：US623167

申请日：1975-10-16

Applicant: Shing Chung Wang

Inventor： Shing Chung Wang

IPC: H01S3/038 ,  G02B27/00 ,  H01S3/03 ,  H04N1/48 ,  H01S3/02 ,  H04N1/46

CPC classification number: H04N1/482 ,  H01S3/031

Abstract: A laser structure for generating white laser light when energized by a source of dc voltage. The laser tube structure comprises a gas-filled envelope having a longitudinal axis, an anode electrode forming a portion of the envelope. A hollow cathode is positioned within the envelope and coaxially disposed with respect to the anode electrode portion of the envelope. Members are coaxially aligned with the ends of the envelope such that a structure is provided for confining a gaseous medium therein, a dc voltage applied between the cathode and anode electrode creating a discharge therebetween, the discharge stimulating continuous wave laser emission along the longitudinal axis of the cathode, the laser emission comprising simultaneous multi-line emissions in the form of white light.

Abstract translation: 一种激光结构，用于在由直流电压源通电时产生白色激光。 激光管结构包括具有纵向轴线的气体填充的外壳，形成外壳的一部分的阳极电极。 空心阴极位于外壳内并相对于外壳的阳极电极部分同轴设置。 构件与外壳的端部同轴对准，使得提供用于限制其中的气体介质的结构，施加在阴极和阳极之间的直流电压在其间产生放电，沿着纵向轴线的放电刺激连续波激光发射 阴极，激光发射包括白光形式的同时多线发射。

公开(公告)号：US20130228810A1

公开(公告)日：2013-09-05

申请号：US13542028

申请日：2012-07-05

Applicant: Shing-Chung Wang ,  Hao-Chung Kuo ,  Hsin-Chu Chen ,  Kuo-Ju Chen

Inventor： Shing-Chung Wang ,  Hao-Chung Kuo ,  Hsin-Chu Chen ,  Kuo-Ju Chen

IPC: H01L33/50

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/34333

Abstract: A solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.

Abstract translation: 提供了包括固态光源，封装结构和第一荧光体的固态照明灯具。 封装结构封装固态光源并具有外部照明表面。 图案化第一荧光体以覆盖外部照明表面的一部分，用于对来自固体光源的照明进行下变频。

公开(公告)号：US07588955B2

公开(公告)日：2009-09-15

申请号：US11984247

申请日：2007-11-15

Applicant: Hung-Wen Huang ,  Tien-Chang Lu ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Hung-Wen Huang ,  Tien-Chang Lu ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01L21/00

CPC classification number: H01L33/08 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Abstract translation: 提供了具有纳米棒状结构的发光二极管（LED）的方法。 LED采用纳米棒随后通过蚀刻方法和PEC方法沿纵向方向形成。 此外，将多个纳米棒排列成阵列，以便提供比常规LED具有更大亮度和更高发光效率的LED。

公开(公告)号：US20090020772A1

公开(公告)日：2009-01-22

申请号：US11984562

申请日：2007-11-20

Applicant: Ching-Hua CHIU ,  Hung-Wen HUANG ,  Hao-Chung KUO ,  Tien-Chang LU ,  Shing-Chung WANG ,  Chih-Ming LAI

Inventor： Ching-Hua CHIU ,  Hung-Wen HUANG ,  Hao-Chung KUO ,  Tien-Chang LU ,  Shing-Chung WANG ,  Chih-Ming LAI

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/10 ,  H01L33/44

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract translation: 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。