利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.043 秒)

    Light-emitting device and method for making the same
    3.
    发明授权
    Light-emitting device and method for making the same 有权
    发光装置及其制造方法

    公开(公告)号：US07888144B2

    公开(公告)日：2011-02-15

    申请号：US11984562

    申请日：2007-11-20

    申请人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

    发明人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

    IPC分类号： H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/44

    摘要： A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

    摘要翻译： 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。

    Etching growth layers of light emitting devices to reduce leakage current
    4.
    发明授权
    Etching growth layers of light emitting devices to reduce leakage current 有权
    蚀刻生长层的发光器件，以减少漏电流

    公开(公告)号：US08592242B2

    公开(公告)日：2013-11-26

    申请号：US12949316

    申请日：2010-11-18

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

    摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

    Method to remove sapphire substrate
    5.
    发明授权
    Method to remove sapphire substrate 有权
    去除蓝宝石衬底的方法

    公开(公告)号：US08563334B2

    公开(公告)日：2013-10-22

    申请号：US12881457

    申请日：2010-09-14

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/3065 ,  H01L21/66 ,  H01L21/306

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/405

    摘要： A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

    摘要翻译： 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。

    PHOTONIC DEVICE HAVING EMBEDDED NANO-SCALE STRUCTURES
    6.
    发明申请
    PHOTONIC DEVICE HAVING EMBEDDED NANO-SCALE STRUCTURES 审中-公开
    具有嵌入式纳米尺度结构的光电器件

    公开(公告)号：US20130187122A1

    公开(公告)日：2013-07-25

    申请号：US13354162

    申请日：2012-01-19

    申请人： Yea-Chen Lee ,  Jung-Gang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    发明人： Yea-Chen Lee ,  Jung-Gang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    IPC分类号： H01L33/04 ,  H01L33/60

    CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L2933/0016

    摘要： The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.

    摘要翻译： 本公开涉及一种制造照明装置的方法。 该方法包括在衬底上形成第一III-V族化合物层。 第一III-V族化合物层具有第一类导电性。 在第一III-V族化合物层上形成多量子阱（MQW）层。 然后在MQW层上形成第二个III-V族化合物层。 第二III-V族化合物层具有不同于第一类导电性的第二类型的导电性。 此后，在第二III-V族化合物层上形成多个导电组分。 然后在第二III-V族化合物层上和导电组分之上形成光反射层。 导电组件各自具有比光反射层更好的粘合和导电性能。

    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME
    8.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME 审中-公开
    具有改进的光提取效率的发光二极管及其制造方法

    公开(公告)号：US20130140592A1

    公开(公告)日：2013-06-06

    申请号：US13308784

    申请日：2011-12-01

    申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    IPC分类号： H01L33/22 ,  H01L33/36

    CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L2933/0091

    摘要： A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

    摘要翻译： 公开了一种发光二极管结构及其制造方法。 在一个示例中，发光二极管结构包括具有大于或等于约250μm的厚度的晶体衬底，其中所述晶体衬底具有第一粗糙表面和第二粗糙表面，所述第二粗糙表面与所述第一粗糙表面相对， 粗糙表面; 设置在所述第一粗糙表面上的多个外延层，所述多个外延层被配置为发光二极管; 以及另一衬底，其结合到所述晶体衬底，使得所述多个外延层设置在所述另一衬底和所述结晶衬底的所述第一粗糙表面之间。

    THICK WINDOW LAYER LED MANUFACTURE
    9.
    发明申请
    THICK WINDOW LAYER LED MANUFACTURE 审中-公开
    厚窗帘LED制造

    公开(公告)号：US20130095581A1

    公开(公告)日：2013-04-18

    申请号：US13276108

    申请日：2011-10-18

    申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

    IPC分类号： H01L21/50 ,  H01L33/48

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2924/00

    摘要： A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

    摘要翻译： 公开了用于接合，切割和形成LED管芯的LED管芯和方法。 在一个示例中，该方法包括形成LED晶片，其中LED晶片包括衬底和设置在衬底上的多个外延层，其中多个外延层被配置为形成LED; 将LED晶片连接到基板以形成LED对; 在接合之后，对LED对进行切割，其中，切割包括同时切割LED晶片和基板，从而形成LED管芯。

    ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT
    10.
    发明申请
    ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT 有权
    消除发光装置的生长层，以减少泄漏电流

    公开(公告)号：US20120126262A1

    公开(公告)日：2012-05-24

    申请号：US12949316

    申请日：2010-11-18

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

    摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。