PROCESS FOR COLLECTIVE MANUFACTURING OF SMALL VOLUME HIGH PRECISION MEMBRANES AND CAVITIES
    15.
    发明申请
    PROCESS FOR COLLECTIVE MANUFACTURING OF SMALL VOLUME HIGH PRECISION MEMBRANES AND CAVITIES 有权
    集中制造小容量高精密膜和CAVIQU的过程

    公开(公告)号:US20090130822A1

    公开(公告)日:2009-05-21

    申请号:US12298894

    申请日:2007-04-26

    Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

    Abstract translation: 本发明涉及一种用于集体制造具有给定厚度d的空腔和/或膜(24)的方法,其中所述晶片被称为绝缘体上半导体层,包括至少一个具有厚度d的半导体表面层 绝缘层本身被支撑在基板上,该方法包括:蚀刻具有厚度d的半导体表面层,绝缘层形成停止层,以在表面层中形成所述空腔和/或膜。

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