Abstract:
An organometallic lead precursor, represented by following formula: L.sub.x .multidot.Pb(THD).sub.2 �I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility and in stability at the vaporization point. Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.
Abstract:
An organometallic zirconium precursor, represented by following formula:L.sub.x.Zr(THD).sub.4 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.
Abstract:
An organometallic lead precursor, represented by following formula:L.sub.x.Pb(THD).sub.2 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.