Organometallic lead precursor, in-situ synthesis thereof, lead-titanium
based thin film using the same, and preparation method therefor
    11.
    发明授权
    Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor 失效
    有机金属铅前体,其原位合成,使用其的铅钛基薄膜及其制备方法

    公开(公告)号:US5688980A

    公开(公告)日:1997-11-18

    申请号:US729089

    申请日:1996-10-10

    CPC classification number: C07F7/003 C23C16/409

    Abstract: An organometallic lead precursor, represented by following formula: L.sub.x .multidot.Pb(THD).sub.2 �I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility and in stability at the vaporization point. Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.

    Abstract translation: 由下式表示的有机金属铅前体:LxxPb(THD)2 [I]其中L是选自NR3(R = H,CH3)和Cl2气体的电子供体配体; THD表示2,2',6,6'-四甲基-3,5-庚二酮; 并且x在0.5至2的范围内,通过使气相电子给体在预定温度下流入含有双(2,2',6,6'-四甲基-3,5-庚二酮)Pb的起泡器中来制备, 原位合成一种加合物。 该前体在蒸发点显示挥发性和稳定性方面的显着改善。 由前体制备的铅钛基薄膜显示出优异的再现性和可靠性。

    Preparation method for lead-zirconium-titanium based thin film
    12.
    发明授权
    Preparation method for lead-zirconium-titanium based thin film 失效
    铅 - 锆 - 钛基薄膜的制备方法

    公开(公告)号:US5641540A

    公开(公告)日:1997-06-24

    申请号:US415837

    申请日:1995-04-03

    CPC classification number: C23C16/409

    Abstract: An organometallic zirconium precursor, represented by following formula:L.sub.x.Zr(THD).sub.4 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.

    Abstract translation: 由下式表示的有机金属锆前体:Lx.Zr(THD)4 [I]其中L是选自NR 3(R = H,CH 3)气体和Cl 2气体的电子供体配体; THD表示2,2',6,6'-四甲基-3,5-庚二酮; 并且x为0.3至1.5的范围,条件是L为NR 3或0.5至2的范围,条件是L为Cl 2,通过使气相电子给体流入含有双(2, 2',6,6'-四甲基-3,5-庚二酮)Zr在预定温度下,原位合成加合物。 该前体在挥发性方面表现出显着的改善,并且在蒸发点处具有稳定性。 由前体制备的铅锆钛薄膜显示出优异的再现性和可靠性。

    Preparation method for lead-titanium based thin film
    13.
    发明授权
    Preparation method for lead-titanium based thin film 失效
    铅钛基薄膜的制备方法

    公开(公告)号:US5637352A

    公开(公告)日:1997-06-10

    申请号:US539518

    申请日:1995-10-05

    CPC classification number: C07F7/003 C23C16/409

    Abstract: An organometallic lead precursor, represented by following formula:L.sub.x.Pb(THD).sub.2 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.

    Abstract translation: 由下式表示的有机金属铅前体:Lx.Pb(THD)2 [I]其中L是选自NR 3(R = H,CH 3)气体和Cl 2气体的电子供体配体; THD表示2,2',6,6'-四甲基-3,5-庚二酮; 并且x在0.5至2的范围内,通过使气相电子给体在预定温度下流入含有双(2,2',6,6'-四甲基-3,5-庚二酮)Pb的起泡器中来制备, 原位合成一种加合物。 该前体在挥发性方面表现出显着的改善,并且在蒸发点处具有稳定性。 由前体制备的铅钛基薄膜显示出优异的再现性和可靠性。

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