公开(公告)号：US20090108337A1

公开(公告)日：2009-04-30

申请号：US11977810

申请日：2007-10-26

Applicant: Yuhao Luo ,  Shuxian Wu ,  Xin X. Wu ,  Jae-Gyung Ahn ,  Deepak Kumar Nayak ,  Daniel Gitlin

Inventor： Yuhao Luo ,  Shuxian Wu ,  Xin X. Wu ,  Jae-Gyung Ahn ,  Deepak Kumar Nayak ,  Daniel Gitlin

IPC: H01L29/76 ,  H01L21/336

CPC classification number: H01L27/0251

Abstract: A method of protecting a transistor formed on a die of an integrated circuit is disclosed. The method comprises forming an active region of the transistor on the die; forming a gate of the transistor over the active region; coupling a primary contact to the gate of the transistor; coupling a programmable element between the gate of the transistor and a protection element; and decoupling the protection element from the gate of the transistor by way of the programmable element. Circuits for protecting a transistor formed on a die of an integrated circuit are also disclosed.

Abstract translation: 公开了一种保护形成在集成电路的管芯上的晶体管的方法。 该方法包括在晶片上形成晶体管的有源区; 在有源区上形成晶体管的栅极; 将初级接触耦合到晶体管的栅极; 在所述晶体管的栅极和保护元件之间耦合可编程元件; 以及通过可编程元件将保护元件与晶体管的栅极去耦合。 还公开了用于保护形成在集成电路的管芯上的晶体管的电路。

公开(公告)号：US06868537B1

公开(公告)日：2005-03-15

申请号：US10082991

申请日：2002-02-25

Applicant: Jonathan J. Ho ,  Xin X. Wu ,  Zicheng Gary Ling ,  Jan L. de Jong

Inventor： Jonathan J. Ho ,  Xin X. Wu ,  Zicheng Gary Ling ,  Jan L. de Jong

IPC: G03F1/14 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/68 ,  G06F17/5068 ,  G06F2217/12

Abstract: For IC devices that have repeating structures, a method of generating a database for making a mask layer starts with a hierarchical database describing at least one repeating element in the layer, a skeleton that surrounds the repeating elements, and instructions as to where to locate the repeating elements within the skeleton. This database is modified to generate a database that has optical proximity correction (OPC) for diffraction of light that will pass through the mask and expose photoresist on the IC layer. The optical-proximity corrected mask database is fractured by a mask house using instructions on how the modified data base will be divided to form repeating elements that are still identical after OPC, a mask skeleton that includes non-repeating elements, and instructions for placement of the repeating elements in the skeleton. Thus the resulting mask database is smaller than a mask database that includes all copies of repeating elements.

Abstract translation: 对于具有重复结构的IC设备，生成用于制作掩模层的数据库的方法从描述层中的至少一个重复元素的分层数据库开始，围绕重复元素的骨架以及关于在哪里定位的指令 重复骨骼内的元素。 该数据库被修改以产生具有光学邻近校正（OPC）的数据库，用于衍射通过掩模并在IC层上曝光光致抗蚀剂的光的衍射。 使用关于如何将经修改的数据库分割以形成在OPC之后仍然相同的重复元素的指令，包含非重复元素的掩码框架以及用于放置 骨骼中的重复元素。 因此，所得到的掩码数据库小于包含所有重复元素副本的掩码数据库。

公开(公告)号：US06645802B1

公开(公告)日：2003-11-11

申请号：US09877690

申请日：2001-06-08

Applicant: Sheau-Suey Li ,  Shahin Toutounchi ,  Michael J. Hart ,  Xin X. Wu ,  Daniel Gitlin

Inventor： Sheau-Suey Li ,  Shahin Toutounchi ,  Michael J. Hart ,  Xin X. Wu ,  Daniel Gitlin

IPC: H01L218234

CPC classification number: H01L27/0251 ,  Y10S438/983

Abstract: An ESD protection circuit includes a bipolar transistor, a resistor, and a zener diode formed on and within a semiconductor substrate. The resistor extends between the base and emitter regions of the transistor so that voltage developed across the resistor can turn on the transistor. The zener diode is formed in series with the resistor and extends between the base and collector regions of the transistor. Thus configured, breakdown current through the zener diode, typically in response to an ESD event, turns on the transistor to provide a nondestructive discharge path for the ESD. The zener diode includes anode and cathode diffusions. The cathode diffusion extends down into the semiconductor substrate in a direction perpendicular to the substrate. The anode diffusion extends down through the cathode diffusion into the semiconductor substrate. The anode diffusion extends down further than the cathode diffusion so that the zener diode is arranged vertically with respect to the substrate. The cathode diffusion can be formed using two separate diffusions, one of which extends deeper into the substrate than other.

Abstract translation: ESD保护电路包括形成在半导体衬底上和半导体衬底内的双极晶体管，电阻器和齐纳二极管。 电阻器在晶体管的基极和发射极区域之间延伸，使跨越电阻器的电压可以导通晶体管。 齐纳二极管与电阻器串联形成，并在晶体管的基极和集电极区域之间延伸。 如此配置，通常通过齐纳二极管的击穿电流（通常响应于ESD事件）导通晶体管，以为ESD提供非破坏性的放电路径。 齐纳二极管包括阳极和阴极扩散。 阴极扩散沿垂直于衬底的方向向下延伸到半导体衬底中。 阳极扩散通过阴极扩散向下延伸到半导体衬底中。 阳极扩散比阴极扩散向下延伸，使得齐纳二极管相对于衬底垂直布置。 可以使用两个分开的扩散形成阴极扩散，其中一个扩散比其它扩散更深。