公开(公告)号：US08004001B2

公开(公告)日：2011-08-23

申请号：US12088849

申请日：2006-09-01

Applicant: Shu Yuan ,  Xuejun Kang ,  Daike Wu

Inventor： Shu Yuan ,  Xuejun Kang ,  Daike Wu

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0202 ,  H01S5/32341

Abstract: A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.

Abstract translation: 一种用于发光的半导体器件，具有多个具有用于发光的n型层的外延层和用于光反射的p型层。 p型层具有用于导电金属的外层的至少一个种子层。 至少一个种子层是用于提供用于外层和光反射层的差分热膨胀的缓冲器的材料。

公开(公告)号：US20100295014A1

公开(公告)日：2010-11-25

申请号：US12377380

申请日：2007-08-16

Applicant: Xuejun Kang ,  Zhen Chen ,  Tien Khee Ng ,  Jenny Lam ,  Shu Yuan

Inventor： Xuejun Kang ,  Zhen Chen ,  Tien Khee Ng ,  Jenny Lam ,  Shu Yuan

IPC: H01L33/04 ,  H01L33/10 ,  H01L33/30

CPC classification number: H01L33/22 ,  H01L33/405

Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.

Abstract translation: 一种提高发光二极管的外部光效率的方法，所述方法包括蚀刻发光二极管的n型层的外表面以形成表面纹理化，所述表面纹理化减少内部光反射以增加光输出。 还公开了相应的发光二极管。

公开(公告)号：US20080121908A1

公开(公告)日：2008-05-29

申请号：US11578281

申请日：2005-03-01

Applicant: Shu Yuan ,  Xuejun Kang

Inventor： Shu Yuan ,  Xuejun Kang

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/64

Abstract: Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.

Abstract translation: 半导体发光二极管上的反射层的制造在半导体发光二极管上制造反射层的方法，该半导体发光二极管在基板上具有多个外延层的晶片; 所述方法包括在所述多个外延层的前表面上施加第一欧姆接触层，所述第一欧姆接触层是反射材料以还用作反射层。

公开(公告)号：US20100167501A1

公开(公告)日：2010-07-01

申请号：US12667418

申请日：2008-07-03

Applicant: Xuejun Kang ,  Shu Yuan ,  Jenny Lam ,  Shiming Lin

Inventor： Xuejun Kang ,  Shu Yuan ,  Jenny Lam ,  Shiming Lin

IPC: H01L21/78

CPC classification number: H01L29/2003 ,  H01L21/6835 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L2221/6835 ,  H01L2933/0016

Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.

Abstract translation: 公开了制造半导体器件的方法。 所述方法包括：提供具有安装在所述衬底上的多个外延层的衬底，并且所述衬底与所述多个外延层分离，同时所述多个外延层是完整的。 这保持了多个外延层的电学，光学和机械特性。

公开(公告)号：US20080164480A1

公开(公告)日：2008-07-10

申请号：US10572525

申请日：2003-09-19

Applicant: Xuejun Kang ,  Daike Wu ,  Edward Robert Perry ,  Shu Yuan

Inventor： Xuejun Kang ,  Daike Wu ,  Edward Robert Perry ,  Shu Yuan

IPC: H01L29/20 ,  H01L33/00 ,  H01L21/44 ,  H01L21/60 ,  H01L21/66

CPC classification number: H01L21/28575 ,  H01L33/0079 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/32341 ,  H01L2924/00

Abstract: A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer; (b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.

Abstract translation: 一种在衬底上制造半导体器件的方法，该半导体具有晶片。 该方法包括以下步骤：（a）将导热金属晶种层施加到晶片; （b）在种子层上电镀相对厚的导电金属层，和（c）去除衬底。 还公开了相应的半导体器件。