公开(公告)号：US08277893B2

公开(公告)日：2012-10-02

申请号：US12497428

申请日：2009-07-02

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/06

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US20110180001A1

公开(公告)日：2011-07-28

申请号：US13014199

申请日：2011-01-26

申请人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

发明人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  B05C11/00

CPC分类号： C30B29/403 ,  C30B25/14

摘要： [Summary][Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.[Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.

摘要翻译： 发明内容提供一种III族氮化物半导体的气相外延装置，包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将来自反应器的中央部的原料气体向反应器的周边部供给， 和反应气体排出部。 即使在大量的大孔径基板的表面上进行晶体生长的情况下，也可以使气相外延装置以相同的流量喷射任意角度的原料气体，能够抑制原料的分解，结晶化 在基座的相对面上的气体。 [解决方案]气相外延装置使得：基座的相对面具有用于使冷却剂流动的装置; 原料气体导入部具有多个气体喷出口，其形成为气体喷出孔沿着垂直方向与盘状隔壁分隔的结构， 并且气体喷射孔中的至少一个具有这样的结构，即气体喷射孔在圆周方向上与多个柱状隔板分隔开。

公开(公告)号：US20070051316A1

公开(公告)日：2007-03-08

申请号：US11514927

申请日：2006-09-05

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。