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    FILM FORMING APPARATUS
    1.
    发明申请
    FILM FORMING APPARATUS 审中-公开

    公开(公告)号：US20190249298A1

    公开(公告)日：2019-08-15

    申请号：US16263218

    申请日：2019-01-31

    申请人： NOBORU SUDA ,  TAKAHIRO OISHI ,  JUNJI KOMENO ,  CHE-LIN CHEN ,  YI-HUNG LIU

    发明人： NOBORU SUDA ,  TAKAHIRO OISHI ,  JUNJI KOMENO ,  CHE-LIN CHEN ,  YI-HUNG LIU

    IPC分类号： C23C16/458

    CPC分类号： C23C16/4584

    摘要： The present invention provides a film forming apparatus capable of enabling source gases to isotropically flow and reducing the size of its chamber. When a susceptor with substrate holders containing substrates moves downward, the substrate holders are combined with a clutch mechanism. When a driving motor runs, a rotating shaft conformably rotates. The rotation is transmitted to a central gear through the clutch mechanism so as to rotate the central gear. Thus, the substrate holder whose peripheral surface is engaged with the center gear accordingly rotates so as to rotate the substrates. When the driving motor runs, a revolving shaft conformably rotates. The rotation is transmitted to the susceptor through a revolving clutch mechanism so as to rotate the susceptor and revolve the substrates. Process gases are fed via an inlet so that expected films are formed on the substrates when the substrates are at rotation and revolution statuses.

    CHEMICAL VAPOR DEPOSITION APPARATUS
    2.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS 失效
    化学蒸气沉积装置

    公开(公告)号：US20090269938A1

    公开(公告)日：2009-10-29

    申请号：US12497428

    申请日：2009-07-02

    申请人： Tatsuya OHORI ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    发明人： Tatsuya OHORI ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    IPC分类号： H01L21/46

    CPC分类号： C23C16/4581 ,  C23C16/481

    摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

    摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

    Chemical vapor deposition apparatus
    3.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US08277893B2

    公开(公告)日：2012-10-02

    申请号：US12497428

    申请日：2009-07-02

    申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    IPC分类号： C23C16/06

    CPC分类号： C23C16/4581 ,  C23C16/481

    摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

    摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

    Chemical vapor deposition apparatus
    4.
    发明申请
    Chemical vapor deposition apparatus 审中-公开
    化学气相沉积装置

    公开(公告)号：US20070051316A1

    公开(公告)日：2007-03-08

    申请号：US11514927

    申请日：2006-09-05

    申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4581 ,  C23C16/481

    摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

    摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。