公开(公告)号：US09905443B2

公开(公告)日：2018-02-27

申请号：US13598828

申请日：2012-08-30

Applicant: Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

Inventor： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

IPC: C23C14/54 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67115 ,  C23C14/541 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68742

Abstract: Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

公开(公告)号：US20180053670A1

公开(公告)日：2018-02-22

申请号：US15637930

申请日：2017-06-29

Applicant: Applied Materials, Inc.

Inventor： Shinichi OKI ,  Yoshinobu MORI ,  Yuji AOKI

IPC: H01L21/67 ,  C23C16/48 ,  H01L21/20

CPC classification number: H01L21/67248 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/455 ,  C23C16/466 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  H01L21/20

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

公开(公告)号：US09870937B2

公开(公告)日：2018-01-16

申请号：US13157250

申请日：2011-06-09

Applicant: Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Jay Ashjaee ,  George D. Kamian ,  David Mordo ,  Takao Yonehara

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Jay Ashjaee ,  George D. Kamian ,  David Mordo ,  Takao Yonehara

IPC: C30B25/14 ,  H01L21/677 ,  C23C16/455 ,  C23C16/48 ,  C23C16/54 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

公开(公告)号：US09793433B2

公开(公告)日：2017-10-17

申请号：US15288181

申请日：2016-10-07

Applicant: Rayvio Corporation

Inventor： Yitao Liao ,  Robert Walker ,  Doug Collins

IPC: H01L33/00 ,  H01L33/16 ,  H01L33/18 ,  H01L21/02 ,  C23C14/06 ,  C23C14/00 ,  C23C16/18 ,  H01L33/06 ,  H01L33/32 ,  C23C14/56 ,  C23C16/30 ,  C23C16/48 ,  C23C16/54

CPC classification number: H01L33/0075 ,  C23C14/0036 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/18 ,  C23C16/303 ,  C23C16/481 ,  C23C16/54 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L2933/0091

Abstract: A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

公开(公告)号：US20170278761A1

公开(公告)日：2017-09-28

申请号：US15466520

申请日：2017-03-22

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers

IPC: H01L21/66 ,  C23C16/50 ,  H01L21/3065 ,  C23C16/46 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01L22/26 ,  C23C16/047 ,  C23C16/46 ,  C23C16/481 ,  C23C16/511 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

公开(公告)号：US20170226639A1

公开(公告)日：2017-08-10

申请号：US15423065

申请日：2017-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi YAMAGA

IPC: C23C16/48 ,  H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02 ,  C23C16/458

CPC classification number: C23C16/481 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67259 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: A substrate processing apparatus that performs a film formation process on a substrate placed on one side of a rotary table includes: a main heating mechanism configured to heat the substrate; an auxiliary heating mechanism configured to adjust an intensity of light irradiated from the auxiliary heating mechanism in an inward/outward direction of the rotary table; a temperature measurement part configured to detect a temperature distribution of the substrate in the inward/outward direction of the rotary table; a position detection part configured to detect a position of the rotary table in a rotational direction of the rotary table; and a control part configured to control the intensity of the light irradiated from the auxiliary heating mechanism based on a temperature measurement data obtained by the temperature measurement part, a data corresponding to a target temperature distribution of the substrate, and a position detection value detected by the position detection part.

公开(公告)号：US20170221735A1

公开(公告)日：2017-08-03

申请号：US15287434

申请日：2016-10-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei Hung

IPC: H01L21/67 ,  C23C16/48 ,  C23C16/46

CPC classification number: H01L21/67115 ,  C23C16/46 ,  C23C16/481

Abstract: A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

公开(公告)号：US09679779B2

公开(公告)日：2017-06-13

申请号：US13797549

申请日：2013-03-12

Applicant: The Aerospace Corporation

Inventor： David P. Taylor ,  Margaret H. Abraham

IPC: H01L21/285 ,  B81C1/00 ,  C23C16/01 ,  C23C16/18 ,  C23C16/48 ,  H01L21/3065 ,  C23C16/04 ,  C23C16/46 ,  H01L27/13 ,  H01L49/02 ,  G01J5/02 ,  G02B5/28

CPC classification number: H01L21/28506 ,  B81B2203/0109 ,  B81C1/00373 ,  B81C2201/0176 ,  B81C2201/0188 ,  C23C16/01 ,  C23C16/04 ,  C23C16/18 ,  C23C16/46 ,  C23C16/481 ,  C23C16/483 ,  G01J5/024 ,  G02B5/285 ,  H01L21/3065 ,  H01L27/13 ,  H01L28/40 ,  H01L28/87

Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.

公开(公告)号：US09580802B2

公开(公告)日：2017-02-28

申请号：US14644703

申请日：2015-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Kohichi Orito

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  C23C16/54 ,  H01L21/02 ,  H01L21/762

CPC classification number: C23C16/455 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76224

Abstract: A film formation method performs a supply cycle of sequentially supplying two kinds of reactive gases inside a vacuum container to form a thin film on the substrate. The method includes placing the substrate, including a depressed portion formed thereon, on a table, then adjusting a temperature of the substrate to a temperature at which a first reactive gas is adsorbed and condensed, then supplying the first reactive gas and thereby depositing a condensed substance of the first reactive gas on the substrate, then rotating the table, then partly vaporizing the condensed substance by supplying a heated gas to the substrate; and then supplying a second reactive gas in an activated state to the substrate and thereby causing the second reactive gas to react with the condensed substance.

Abstract translation: 成膜方法进行在真空容器内依次供给两种反应气体的供给循环，在基板上形成薄膜。 该方法包括将包括形成在其上的凹陷部分的基板放置在工作台上，然后将衬底的温度调节到第一反应气体被吸附和冷凝的温度，然后提供第一反应气体，从而沉积冷凝 然后旋转工作台，然后通过向衬底提供加热的气体来部分蒸发冷凝物质; 然后将处于活化状态的第二反应气体供给到基板，从而使第二反应气体与冷凝物质反应。

公开(公告)号：US20160326646A1

公开(公告)日：2016-11-10

申请号：US15212774

申请日：2016-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/40 ,  C23C14/14 ,  C23C14/34 ,  H01L21/768 ,  C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/18 ,  C23C16/48

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.