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公开(公告)号：US6155540A
公开(公告)日：2000-12-05
申请号：US158781
申请日：1998-09-23
IPC分类号： B05B17/06 , B01D1/16 , B01D3/34 , B01J4/00 , C23C16/44 , C23C16/448 , H01L21/205 , H01L21/285 , B01F3/04
CPC分类号： B01J4/008 , B01D1/16 , B01D3/346 , C23C16/4481 , C23C16/4486 , Y10S261/65
摘要： An apparatus for vaporizing a liquid material and supplying the material in a gas phase, in which a liquid material for CVD is introduced into a vaporizer at a controlled flow rate, atomized by an ultrasonic atomizing device disposed at the inside or the outside of the vaporizer, heated by a circular flow of a carrier gas and vaporized. When a liquid material for CVD is supplied to a CVD apparatus in the production of semiconductors, the concentration of the material is controlled easily in the vaporization, the concentration of the material in the gas can be changed quickly in response with the change in the flow rate of the material, decomposition of the material does not occur and the operating condition of a CVD apparatus is not restricted.
摘要翻译： 一种用于蒸发液体材料并将气体供给材料的装置，其中将用于CVD的液体材料以受控的流量引入蒸发器，由设置在蒸发器内部或外部的超声波雾化装置雾化 ，通过载气的圆形流加热并蒸发。 当用于CVD的液体材料在半导体的生产中被供应到CVD装置时，在蒸发中容易控制材料的浓度，气体中的材料的浓度可以响应于流动的变化而迅速地改变 材料的速率不会发生材料的分解，并且CVD装置的操作条件不受限制。
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公开(公告)号：US6106898A
公开(公告)日：2000-08-22
申请号：US159092
申请日：1998-09-23
IPC分类号： C23C16/34
CPC分类号： C23C16/34
摘要： A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.
摘要翻译： 一种通过化学气相沉积法制备氮化物膜的方法，其使包含以叔丁基肼为主要成分的原料气体作为氮源的主要成分与有机金属化合物的材料气体，金属卤化物或 金属氢化物以将氮化物膜沉积在基底上。
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公开(公告)号：US6100415A
公开(公告)日：2000-08-08
申请号：US267791
申请日：1999-03-15
摘要： A purified alkoxide from which volatile impurities causing polymerization and degradation of the alkoxide are removed to extremely low concentrations. The purified alkoxide can be obtained by distilling a crude alkoxide and stripping the distilled liquid alkoxide by applying ultrasonic vibration while passing an inert gas through the liquid alkoxide. A high quality thin insulating film excellent in flatness with few defects such as voids can be obtained by using the purified alkoxide of the present invention as a CVD material.
摘要翻译： 纯化的醇盐，其中引起聚合的挥发性杂质和醇盐的降解被除去至极低的浓度。 纯化的醇盐可以通过蒸馏粗的醇盐并通过在惰性气体通过液体醇盐的同时施加超声振动来汽提蒸馏的液体醇盐来获得。 通过使用本发明的纯化醇盐作为CVD材料，可以获得平坦度优异，空隙少的缺陷的优质薄绝缘膜。
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公开(公告)号：US20090269938A1
公开(公告)日：2009-10-29
申请号：US12497428
申请日：2009-07-02
申请人： Tatsuya OHORI , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
发明人： Tatsuya OHORI , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
IPC分类号： H01L21/46
CPC分类号： C23C16/4581 , C23C16/481
摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.
摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。
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公开(公告)号：US08679254B2
公开(公告)日：2014-03-25
申请号：US13014199
申请日：2011-01-26
申请人： Kenji Iso , Yoshiyasu Ishihama , Ryohei Takaki , Yuzuru Takahashi
发明人： Kenji Iso , Yoshiyasu Ishihama , Ryohei Takaki , Yuzuru Takahashi
IPC分类号： C23C16/455 , C23C16/46 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C30B29/403 , C30B25/14
摘要： [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.[Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.
摘要翻译： [问题]提供一种III族氮化物半导体的气相外延装置，包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将来自反应器的中央部的原料气体向反应器的周边部供给， 和反应气体排出部。 即使在大量的大孔径基板的表面上进行晶体生长的情况下，也可以使气相外延装置以相同的流量喷射任意角度的原料气体，能够抑制原料的分解，结晶化 在基座的相对面上的气体。 [解决方案]气相外延装置使得：基座的相对面具有用于使冷却剂流动的装置; 原料气体导入部具有多个气体喷出口，其形成为气体喷出孔沿着垂直方向与盘状隔壁分隔的结构， 并且气体喷射孔中的至少一个具有这样的结构，即气体喷射孔在圆周方向上与多个柱状隔板分隔开。
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公开(公告)号：US20100307418A1
公开(公告)日：2010-12-09
申请号：US12791375
申请日：2010-06-01
申请人： Kenji ISO , Yoshiyasu ISHIHAMA , Ryohei TAKAKI , Yuzuru TAKAHASHI
发明人： Kenji ISO , Yoshiyasu ISHIHAMA , Ryohei TAKAKI , Yuzuru TAKAHASHI
IPC分类号： H01L21/205
CPC分类号： C23C16/301 , C23C16/45512 , C23C16/45572 , C23C16/45574 , C23C16/4584 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio.
摘要翻译： 提供能够提高半导体的膜厚分布的均匀性和反应速度的III族氮化物半导体的气相外延装置。 III族氮化物半导体的气相外延装置包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将原料气体供给到所述反应器; 和反应气体排出部。 在III族氮化物半导体的气相外延装置中，原料气体导入部包括能够喷出通过混合三种即氨，有机金属化合物和载体的混合气体的第一混合气体喷射孔 和任意比例的气体，以及第二混合气体喷射孔，其能够以任意比例喷射通过混合选自氨，有机金属化合物和载气中的两种或三种而获得的混合气体。
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公开(公告)号：US20100229794A1
公开(公告)日：2010-09-16
申请号：US12713237
申请日：2010-02-26
申请人： Kenji ISO , Yoshiyasu Ishihama , Ryohei Takaki , Yuzuru Takahashi
发明人： Kenji ISO , Yoshiyasu Ishihama , Ryohei Takaki , Yuzuru Takahashi
IPC分类号： C23C16/34
CPC分类号： C23C16/303 , C23C16/4586 , C23C16/46 , C23C16/52 , C30B25/02 , C30B29/403
摘要： Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown.
摘要翻译： 提供了一种用于III族氮化物半导体的气相外延装置，包括用于保持基板的基座，基座的相对面，用于加热基板的加热器，设置在基座的中心部分的原料气体导入部 以及由基座和基座的相对面之间的间隙形成的反应器，其中安装的基板与基座的相对面之间的距离非常窄，并且提供了冷却剂流过的构造，用于 基座的相对面。 气相外延装置还包括在基座的相对面上的用于向反应器内部喷射惰性气体的细孔部分和用于向惰性气体供应微细多孔部分的构造。 即使当晶体生长在由具有大直径的基座保持的许多大孔径基板的每一个的表面上或者甚至当基板上的晶体生长时，用于III族氮化物半导体的气相外延装置也能够有效地，高质量的晶体生长 在晶体生长之前在1000℃以上的温度下加热。
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8.发明授权公开(公告)号：US06666921B2
公开(公告)日：2003-12-23
申请号：US10079852
申请日：2002-02-22
申请人： Shiro Sakai , Yukichi Takamatsu , Yuji Mori , Hong Xing Wang , Yoshiyasu Ishihama , Yutaka Amijima
发明人： Shiro Sakai , Yukichi Takamatsu , Yuji Mori , Hong Xing Wang , Yoshiyasu Ishihama , Yutaka Amijima
IPC分类号： C23C1600
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45591 , C30B25/14
摘要： The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.
摘要翻译： 本发明提供了一种用于半导体膜的化学气相沉积装置，其包含水平管状反应器，基座，加热器，进料气体引入部分和反应气体排出部分，其中部分管式反应器壁从上游向下倾斜 进料气体通道的一侧朝向其下游侧。 本发明还提供使用该装置的化学气相沉积方法。
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公开(公告)号：US06592674B2
公开(公告)日：2003-07-15
申请号：US09962143
申请日：2001-09-26
申请人： Shiro Sakai , Yukichi Takamatsu , Yuji Mori , Hiroyuki Naoi , Hong Xing Wang , Yoshiyasu Ishihama , Yutaka Amijima
发明人： Shiro Sakai , Yukichi Takamatsu , Yuji Mori , Hiroyuki Naoi , Hong Xing Wang , Yoshiyasu Ishihama , Yutaka Amijima
IPC分类号： C23C1600
CPC分类号： C23C16/45568 , C23C16/455 , C30B25/02 , C30B25/14 , C30B29/406
摘要： There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway. It is made possible by the apparatus and method to assure high quality crystals without generating a deposit of decomposed products or reaction products on a tubular reactor wall in opposition to the substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature.
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公开(公告)号：US06461407B2
公开(公告)日：2002-10-08
申请号：US09725566
申请日：2000-11-30
IPC分类号： B01D1900
CPC分类号： B01D19/0031 , B01D19/0005
摘要： Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.
摘要翻译： 公开了一种液体原料的供给方法，其中液体原料从液体原料容器脱气并供给到液体流量控制部分，该方法包括使从液体原料容器供给的液体原料通过 第一惰性气体的压力，在透气性合成树脂管的内部，沿着合成树脂管的外表面使具有比第一惰性气体低的渗透性的第二惰性气体与合成树脂管相比，使第一惰性气体溶解 允许液体原料渗透到合成树脂管的外部，然后将液体原料供应到液体流动控制部分和用于该方法中使用该装置的液体原料的装置。 本发明确保了在使用液体原料的半导体制造过程中能够容易且有效地除去溶解在液体原料中的惰性气体。
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