公开(公告)号：US20100001416A1

公开(公告)日：2010-01-07

申请号：US12482131

申请日：2009-06-10

Applicant: Yu-Pin Tsai ,  Cheng-Yi Huang ,  Yao-Hui Hu

Inventor： Yu-Pin Tsai ,  Cheng-Yi Huang ,  Yao-Hui Hu

IPC: H01L23/544 ,  H01L21/304

CPC classification number: H01L23/544 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is thinned. Then, the thinned wafer is fixed on a tape such that the second surface of the wafer is attached to the tape. Finally, the laser marking step is performed, such that a laser light penetrates the tape and marks a pattern on the second surface of the wafer. There are glue residuals remained in the laser-marking pattern of the die manufactured according to the laser-marking method of the invention, and the components of the glue residuals at least include elements of silicon, carbon and oxygen.

Abstract translation: 提供了晶片激光打标方法。 首先，提供具有彼此相对的第一表面（活性表面）和第二表面（背面）的晶片。 接下来，晶片变薄。 然后，将薄的晶片固定在带上，使得晶片的第二表面附接到带上。 最后，执行激光标记步骤，使得激光穿透带并在晶片的第二表面上标记图案。 根据本发明的激光标记方法制造的模具的激光标记图案中残留有胶合残留物，并且胶残留物的成分至少包括硅，碳和氧的元素。

公开(公告)号：US07510909B2

公开(公告)日：2009-03-31

申请号：US11162606

申请日：2005-09-16

Applicant: Yu-Pin Tsai

Inventor： Yu-Pin Tsai

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/544 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A fabricating method of wafer protection layers and a wafer structure are provided. The fabricating method includes providing a wafer first. The wafer includes pluralities of chips and has an active surface, a corresponding reverse surface and a plurality of pre-cut trenches on the active surface. On the active surface, pluralities of bumps are disposed. Next, a first curing-type protection layer and a pellicle are disposed over the active surface. Afterwards, the first curing-type protection layer is asked to contact the active surface. Besides, a second curing-type protection layer is disposed on the reverse surface. Afterward, the first and the second curing-type protection layer are cured. Finally, the wafer is cut through the pre-cut trenches to separate the chips from the wafer.

Abstract translation: 提供了晶片保护层和晶片结构的制造方法。 该制造方法包括首先提供晶片。 晶片包括多个芯片，并且在活性表面上具有活性表面，相应的反面和多个预切割沟槽。 在活性表面上设置有多个凸块。 接下来，在活性表面上设置第一固化型保护层和防护薄膜。 之后，要求第一固化型保护层与活性表面接触。 此外，第二固化型保护层设置在反面上。 之后，固化第一固化型保护层和第二固化型保护层。 最后，通过预切割沟槽切割晶片以将芯片与晶片分离。

公开(公告)号：US08728915B2

公开(公告)日：2014-05-20

申请号：US13225756

申请日：2011-09-06

Applicant: Yu-Pin Tsai ,  Cheng-I Huang ,  Yao-Hui Hu

Inventor： Yu-Pin Tsai ,  Cheng-I Huang ,  Yao-Hui Hu

IPC: H01L21/268 ,  H01L29/06 ,  H01L21/683 ,  H01L23/544 ,  H01L23/00

CPC classification number: H01L21/6836 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2223/54433 ,  H01L2224/16 ,  H01L2924/01025 ,  H01L2924/01084 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/00

Abstract: A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is thinned. Then, the thinned wafer is fixed on a non-UV tape such that the second surface of the wafer is attached to the tape. Finally, the laser marking step is performed, such that a laser light penetrates the non-UV tape and marks a pattern on the second surface of the wafer. According to the laser-marking method of the embodiment, the pattern is formed by the non-UV residuals left on the second surface of the wafer, and the components of the glue residuals at least include elements of silicon and carbon.

Abstract translation: 提供了晶片激光打标方法。 首先，提供具有彼此相对的第一表面（活性表面）和第二表面（背面）的晶片。 接下来，晶片变薄。 然后，将薄的晶片固定在非UV带上，使得晶片的第二表面附接到带上。 最后，执行激光标记步骤，使得激光穿透非UV带并且在晶片的第二表面上标记图案。 根据本实施例的激光标记方法，图案由残留在晶片的第二表面上的非UV残余物形成，并且胶合残余物的成分至少包括硅和碳的元素。

公开(公告)号：US20110241194A1

公开(公告)日：2011-10-06

申请号：US12753843

申请日：2010-04-02

Applicant: Chia-Ching Chen ,  Yu-Pin Tsai

Inventor： Chia-Ching Chen ,  Yu-Pin Tsai

IPC: H01L25/065 ,  H01L23/538

CPC classification number: H01L25/03 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73257 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An embodiment of a stacked package assembly includes: (1) a first semiconductor device package including: (a) a semiconductor device including back and lateral surfaces; (b) a package body including an upper surface and substantially covering the back and lateral surfaces of the device; and (c) a first conductive contact adjacent to the upper surface of the body and electrically connected to the device; (2) a second semiconductor device package disposed above the upper surface of the body; (3) a conductive bump adjacent to the first contact and to the second device package; (4) a second conductive contact external to the first and the second device packages; and (5) a conductive wire electrically connecting the first and the second device packages to the second contact, a first end of the wire adjacent to the first contact and at least partially covered by the bump.

Abstract translation: 堆叠封装组件的实施例包括：（1）第一半导体器件封装，包括：（a）包括背面和侧表面的半导体器件; （b）包装体，其包括上表面并且基本上覆盖所述装置的后表面和侧表面; 和（c）邻近所述主体的上表面并电连接到所述装置的第一导电接触件; （2）设置在所述主体的上表面上方的第二半导体器件封装; （3）邻近所述第一触点和所述第二器件封装的导电凸块; （4）在第一和第二器件封装外部的第二导电触点; 以及（5）将所述第一和第二器件封装电连接到所述第二触点的导线，所述导线的与所述第一触点相邻并且至少部分地被所述凸块覆盖的第一端。

公开(公告)号：US20060057778A1

公开(公告)日：2006-03-16

申请号：US11162606

申请日：2005-09-16

Applicant: Yu-Pin Tsai

Inventor： Yu-Pin Tsai

IPC: H01L21/78

CPC classification number: H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/544 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A fabricating method of wafer protection layers and a wafer structure are provided. The fabricating method includes providing a wafer first. The wafer includes pluralities of chips and has an active surface, a corresponding reverse surface and a plurality of pre-cut trenches on the active surface. On the active surface, pluralities of bumps are disposed. Next, a first curing-type protection layer and a pellicle are disposed over the active surface. Afterwards, the first curing-type protection layer is asked to contact the active surface. Besides, a second curing-type protection layer is disposed on the reverse surface. Afterward, the first and the second curing-type protection layer are cured. Finally, the wafer is cut through the pre-cut trenches to separate the chips from the wafer.

Abstract translation: 提供了晶片保护层和晶片结构的制造方法。 制造方法包括首先提供晶片。 晶片包括多个芯片，并且在活性表面上具有活性表面，相应的反面和多个预切割沟槽。 在活性表面上设置有多个凸块。 接下来，在活性表面上设置第一固化型保护层和防护薄膜。 之后，要求第一固化型保护层与活性表面接触。 此外，第二固化型保护层设置在反面上。 之后，固化第一固化型保护层和第二固化型保护层。 最后，通过预切割沟槽切割晶片以将芯片与晶片分离。