公开(公告)号：US06548406B2

公开(公告)日：2003-04-15

申请号：US09930998

申请日：2001-08-17

申请人： Erh-Kun Lai ,  Hsin-Huei Chen ,  Ying-Tso Chen ,  Shou-Wei Hwang ,  Yu-Ping Huang

发明人： Erh-Kun Lai ,  Hsin-Huei Chen ,  Ying-Tso Chen ,  Shou-Wei Hwang ,  Yu-Ping Huang

IPC分类号： H01L21302

CPC分类号： H01L21/28282 ,  H01L27/115 ,  H01L29/66833

摘要： A method for forming an integrated circuit having metal-oxide nitride-oxide semiconductor (MONOS) memories and mixed-signal circuits is disclosed. The invention integrates non-volatile memory devices such as MONOS devices and logic devices such as MOS devices as well as PIP capacitors into SOC devices with reduced process steps.

摘要翻译： 公开了一种形成具有金属氧化物氮化物半导体（MONOS）存储器和混合信号电路的集成电路的方法。 本发明将诸如MONOS器件的非易失性存储器件和诸如MOS器件的逻辑器件以及PIP电容器集成到具有减少的工艺步骤的SOC器件中。