摘要:
A solid-state imaging device includes a pixel array area in which an unit pixel including a photoelectric conversion element converting optical signals to signal charges and a transfer gate transferring the signal charges which have been photoelectrically converted in the photoelectric conversion element is two-dimensionally arranged in a matrix form, a supply voltage control means for supplying plural first control voltages sequentially to a control electrode of the transfer gate, and a driving means for performing driving of reading out signal charges transferred by the transfer gate when the plural first control voltages are sequentially applied twice and more.
摘要:
A solid-state imaging device includes: a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element whose one end is connected to a control electrode of the amplifying transistor; a driving means for selectively supplying a predetermined voltage to the other end of the capacitive element; and a signal processing circuit that performs a predetermined signal processing with respect to a signal output from each pixel of the pixel array unit.
摘要:
A CMOS image sensor in which column-parallel ADCs are mounted. Reference voltages Vref1 to Vref4 having slopes with different gradients and a reference voltage Vref5 are used. Additionally, a comparison circuit that compares an output voltage Vx of a unit pixel with any one of the reference voltages Vref1 to Vref4, and a comparison circuit that compares the one of the reference voltages Vref1 to Vref4 with the reference voltage Vref5 are included in a column processing circuit. High-resolution AD conversion is performed at a high speed by respective operations of the comparison circuits and an up/down counter.
摘要:
A semiconductor device is provided which has a driving circuit operable to drive a circuit that has a delay, the semiconductor device including: an auxiliary driving circuit operable to accelerate drive of the driving circuit, which receives a drive signal of the driving circuit as an input signal.
摘要:
Disclosed herein is a solid-state imaging device employing a plurality of unit pixels each having an opto-electric conversion section configured to convert incident light into electric charge and an electric-charge holding section configured to hold a signal voltage representing the electric charge produced by the opto-electric conversion section, the solid-state imaging device further including a read section and a control section.
摘要:
A solid-state imaging device includes: a pixel section in which pixels performing photoelectric conversion are arranged in a matrix shape; and a pixel signal reading section that has an AD conversion section which reads pixel signals through pixel units from the pixel section and performs analog digital (AD) conversion. The pixel signal reading section includes comparators each of which compares a reference signal, which is a ramp wave, with read analog signal potentials of pixels in a corresponding column, counter latches each of which is disposed to correspond to each of the comparators, is able to count a comparison time of the corresponding comparator, stops the count when an output of the corresponding comparator is inverted, and retains a corresponding count value, and an adjustment section that performs offset adjustment on the reference signal for each row on which the AD conversion is performed.
摘要:
A solid-state imaging device includes: a pixel unit in which plural pixels that perform photoelectric conversion are arrayed in a matrix shape; and a pixel-signal readout unit that performs readout of pixel signals from the pixel unit in a unit of plural pixels, the pixel-signal readout unit including an AD conversion unit that performs analog-digital (AD) conversion, wherein the pixel-signal readout unit includes plural comparators that compare a reference signal as a ramp wave and readout analog signal potentials of the pixels in rows in which the comparators are provided, plural counter latches that are arranged to correspond to the plural comparators and capable of counting comparison times of the comparators corresponding thereto, stop the count when outputs of the comparators are inverted, and store values of the count, and an adjusting unit that performs offset adjustment for the reference signal every time the AD conversion is performed.
摘要:
A solid-state imaging device includes a pixel array area in which an unit pixel including a photoelectric conversion element converting optical signals to signal charges and a transfer gate transferring the signal charges which have been photoelectrically converted in the photoelectric conversion element is two-dimensionally arranged in a matrix form, a supply voltage control means for supplying plural first control voltages sequentially to a control electrode of the transfer gate, and a driving means for performing driving of reading out signal charges transferred by the transfer gate when the plural first control voltages are sequentially applied twice and more.
摘要:
A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.
摘要:
Disclosed herein is a solid-state imaging device, including: a pixel array unit configured to be formed by two-dimensionally arranging unit pixels each having a photoelectric converter, a charge-voltage converter, a reset transistor to set the charge-voltage converter to a predetermined potential, and an amplification transistor to read out a signal converted by the charge-voltage converter; a signal processor configured to process a signal output from the unit pixel by using a reference voltage; and a setter configured to set a reset level obtained from a second unit pixel from which a signal level has been already read out as the reference voltage of the signal processor before readout of a signal level based on a signal charge accumulated or retained in the charge-voltage converter from a first unit pixel.