公开(公告)号：US20240295807A1

公开(公告)日：2024-09-05

申请号：US18649410

申请日：2024-04-29

Applicant: AGC Inc.

Inventor： Yuya NAGATA ,  Daijiro AKAGI ,  Kenichi SASAKI ,  Hiroaki IWAOKA

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/52 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/26 ,  G03F1/52 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θ range of 35° to 45° to an average value of an intensity of the diffracted light in a 2θ range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.

公开(公告)号：US20240168370A1

公开(公告)日：2024-05-23

申请号：US18382269

申请日：2023-10-20

Applicant: AGC Inc.

Inventor： Shunya TAKI ,  Hiroaki IWAOKA ,  Daijiro AKAGI ,  Ichiro ISHIKAWA

IPC: G03F1/26 ,  G03F1/24 ,  G03F1/48 ,  G03F1/80

CPC classification number: G03F1/26 ,  G03F1/24 ,  G03F1/48 ,  G03F1/80

Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1):


0.625 MP1+MP2≤1000  (1).