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公开(公告)号：US20240280890A1
公开(公告)日：2024-08-22
申请号：US18648522
申请日：2024-04-29
申请人： AGC Inc.
发明人： Takuma KATO , Daijiro AKAGI , Takeshi OKATO , Ryusuke OISHI , Yusuke ONO
摘要： A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
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公开(公告)号：US12066757B2
公开(公告)日：2024-08-20
申请号：US18308635
申请日：2023-04-27
发明人： Chih-Chiang Tu , Chun-Lang Chen , Shih-Hao Yang , Jheng-Yuan Chen
摘要： A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.
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公开(公告)号：US12001133B2
公开(公告)日：2024-06-04
申请号：US18382356
申请日：2023-10-20
申请人： AGC Inc.
发明人： Takuma Kato , Daijiro Akagi , Takeshi Okato , Ryusuke Oishi , Yusuke Ono
摘要： A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
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公开(公告)号：US12001132B2
公开(公告)日：2024-06-04
申请号：US16534968
申请日：2019-08-07
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Ping-Hsun Lin , Shih-Che Wang , Hsin-Chang Lee
IPC分类号： G03F1/22 , G03F1/48 , G03F1/52 , G03F1/54 , H01L21/027
CPC分类号： G03F1/22 , G03F1/48 , G03F1/52 , G03F1/54 , H01L21/0274
摘要： Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.
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公开(公告)号：US11809075B2
公开(公告)日：2023-11-07
申请号：US17394005
申请日：2021-08-04
发明人： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
摘要： A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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公开(公告)号：US11754917B2
公开(公告)日：2023-09-12
申请号：US17227717
申请日：2021-04-12
发明人： Vibhu Jindal
摘要： Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs.
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公开(公告)号：US11740547B2
公开(公告)日：2023-08-29
申请号：US17244662
申请日：2021-04-29
发明人： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
摘要： A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.
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公开(公告)号：US20180239236A1
公开(公告)日：2018-08-23
申请号：US15897612
申请日：2018-02-15
发明人： Yuzo Okamura , Yusuke Hirabayashi
IPC分类号： G03F1/24
摘要： A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.
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公开(公告)号：US10036950B2
公开(公告)日：2018-07-31
申请号：US15246397
申请日：2016-08-24
申请人： SK hynix Inc.
发明人： Tae Joong Ha
摘要： A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.
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公开(公告)号：US20180031965A1
公开(公告)日：2018-02-01
申请号：US15652501
申请日：2017-07-18
发明人： Vibhu Jindal
摘要： Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a an absorber layer on the capping layer, the absorber layer made from an alloy of at least two absorber materials.
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