公开(公告)号：US20230235447A1

公开(公告)日：2023-07-27

申请号：US18099277

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Kenichi OHNO ,  Takashi KURATOMI ,  Ludovic GODET

IPC: C23C14/34 ,  C23C14/50

CPC classification number: C23C14/3414 ,  C23C14/50

Abstract: Embodiments of the present disclosure generally relate to composite PVD target. The target has a diameter, a connection face, a substrate face opposite the connection face, a thickness between the connection face and the substrate face, and a material distribution. The material distribution includes a silicon containing material arranged in a pattern, and a titanium containing material arranged in the pattern. The material distribution is uniform at any point along the thickness.

公开(公告)号：US20220260766A1

公开(公告)日：2022-08-18

申请号：US17673538

申请日：2022-02-16

Applicant: Applied Materials, Inc.

Inventor： Kenichi OHNO ,  Andrew CEBALLOS ,  Karl J. ARMSTRONG ,  Rami HOURANI ,  Takashi KURATOMI ,  Ludovic GODET

IPC: G02B5/20 ,  G02B1/02

Abstract: An optical device is provided. The optical device includes an optical device substrate having a first surface; and a plurality of optical device structures disposed over the first surface of the optical device substrate, the plurality of optical device structures spaced apart from each other in a direction parallel to the first surface, and each optical device structure of the plurality of optical device structures including an optical device film. The optical device film of each optical device structure includes a first zone and a second zone, the first zone positioned between the optical device substrate and the second zone, wherein the first zone and the second zone each include one or more of oxygen and nitrogen, and the first zone and the second zone collectively include three or more metal, metalloid, or semiconductor elements.

公开(公告)号：US20220093403A1

公开(公告)日：2022-03-24

申请号：US17031131

申请日：2020-09-24

Applicant: Applied Materials, Inc.

Inventor： Yiyang WAN ,  Takashi KURATOMI

IPC: H01L21/285 ,  H01J37/32 ,  C23C8/24 ,  C23C8/36 ,  C23C8/80

Abstract: A method and apparatus for nitride capping of titanium materials via chemical vapor deposition techniques is provided. The method includes forming a titanium nitride layer upon a titanium material layer formed on a substrate. The titanium nitride layer is formed by exposing the titanium material layer to a hydrogen-rich nitrogen-containing plasma followed by exposing the titanium material layer to a nitrogen-rich nitrogen-containing plasma. The titanium nitride layer is then exposed to an argon plasma followed by exposing the titanium nitride layer to a halide soak process.

公开(公告)号：US20170098554A1

公开(公告)日：2017-04-06

申请号：US14986146

申请日：2015-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Brent BIGGS ,  Takashi KURATOMI

IPC: H01L21/67 ,  B08B7/00 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67028 ,  B08B7/0035 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32926 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02068

Abstract: Apparatus and methods for processing substrates are disclosed. In some embodiments, a substrate processing system includes: a process chamber defining an interior volume for receiving a substrate and having a plasma forming zone, a substrate support positioned within the interior volume, a resonator coil disposed proximate the plasma forming zone, and a resonant inductor tuning circuit configured to vary an RF feed point location along the resonator coil. A method of operating a substrate processing system, according to embodiments, includes: transferring a substrate to a substrate support disposed within an interior volume of a processing chamber, the interior volume having a plasma forming zone, and operating a resonant inductor tuning circuit to couple an RF power source to a first RF feed point of a plurality of RF feed points along a resonator coil disposed proximate the plasma forming zone.