公开(公告)号：US20220109045A1

公开(公告)日：2022-04-07

申请号：US17065065

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Inventor： Sipeng Gu ,  Wei Zou ,  Kyu-Ha Shim

IPC: H01L29/06 ,  H01L21/762

Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

公开(公告)号：US20250140566A1

公开(公告)日：2025-05-01

申请号：US18495493

申请日：2023-10-26

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rajesh Prasad ,  Fenglin Wang ,  Rui Cheng ,  Karthik Janakiraman ,  Kyu-Ha Shim

IPC: H01L21/3115 ,  H01L21/033 ,  H01L21/311 ,  H10B12/00

Abstract: Thicker hardmasks are typically needed for etching deeper capacitor holes in a DRAM structure. Instead of increasing the hardmask thickness, hardmasks may instead be formed with an increased etch selectivity relative to the underlying semiconductor structure. For example, boron-based hardmasks may be formed that include a relatively high percentage of boron (e.g., greater than 90%). The etch selectivity of the hardmask may be improved by performing an ion implant process using different types of ions. The ion implant may take place before or after opening the hardmask with the pattern for the DRAM capacitor holes. Some designs may also tilt the semiconductor substrate relative to the ion implant process and rotate the substrate to provide greater ion penetration throughout a depth of the openings in the hardmask.

公开(公告)号：US11114299B2

公开(公告)日：2021-09-07

申请号：US16569944

申请日：2019-09-13

Applicant: APPLIED Materials, Inc.

Inventor： Qintao Zhang ,  Kyu-Ha Shim ,  Rajesh Prasad

IPC: H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/768 ,  H01L29/66 ,  H01L21/033

Abstract: A method of forming surface features in a hardmask layer, including etching a first surface feature into the hardmask layer, the first surface feature having a first critical dimension, performing an ion implantation process on the first surface feature to make the first surface feature resistant to subsequent etching processes, etching a second surface feature into the hardmask layer adjacent the first surface feature, wherein the first critical dimension is preserved.

公开(公告)号：US10930508B2

公开(公告)日：2021-02-23

申请号：US16560224

申请日：2019-09-04

Applicant: APPLIED Materials, Inc.

Inventor： Qintao Zhang ,  Kyu-Ha Shim

IPC: H01L21/265 ,  H01L29/66 ,  H01L21/8234

Abstract: Disclosed are methods of forming devices. One method may include providing a first set of fins and a second set of fins extending from a substrate, and providing a dummy oxide over the first set of fins and the second set of fins. The method may further include performing a thermal implant to the second set of fins, wherein the thermal implant is an angled ion implant impacting the dummy oxide. The method may further include removing the dummy oxide from the first set of fins and the second set of fins, and forming a first work function (WF) metal over the first set of fins and a second WF metal over the second set of fins.

公开(公告)号：US20210005445A1

公开(公告)日：2021-01-07

申请号：US16569944

申请日：2019-09-13

Applicant: APPLIED Materials, Inc.

Inventor： Qintao Zhang ,  Kyu-Ha Shim ,  Rajesh Prasad

IPC: H01L21/027 ,  H01L29/66 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3105

Abstract: A method of forming surface features in a hardmask layer, including etching a first surface feature into the hardmask layer, the first surface feature having a first critical dimension, performing an ion implantation process on the first surface feature to make the first surface feature resistant to subsequent etching processes, etching a second surface feature into the hardmask layer adjacent the first surface feature, wherein the first critical dimension is preserved.

公开(公告)号：US20200273707A1

公开(公告)日：2020-08-27

申请号：US16560224

申请日：2019-09-04

Applicant: APPLIED Materials, Inc.

Inventor： Qintao Zhang ,  Kyu-Ha Shim

IPC: H01L21/265 ,  H01L29/66 ,  H01L21/8234

Abstract: Disclosed are methods of forming devices. One method may include providing a first set of fins and a second set of fins extending from a substrate, and providing a dummy oxide over the first set of fins and the second set of fins. The method may further include performing a thermal implant to the second set of fins, wherein the thermal implant is an angled ion implant impacting the dummy oxide. The method may further include removing the dummy oxide from the first set of fins and the second set of fins, and forming a first work function (WF) metal over the first set of fins and a second WF metal over the second set of fins.