公开(公告)号：US20170338111A1

公开(公告)日：2017-11-23

申请号：US15402901

申请日：2017-01-10

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US09564314B2

公开(公告)日：2017-02-07

申请号：US14846177

申请日：2015-09-04

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Abstract translation: 本公开涉及通过原子层沉积工艺沉积诸如掺杂氧化硅膜的掺杂剂膜。 在一些实施例中，反应空间中的衬底与硅前体和掺杂剂前体的脉冲接触，使得硅前体和掺杂剂前体吸附在衬底表面上。 氧等离子体用于将吸附的硅前体和掺杂剂前体转化为掺杂的氧化硅。

公开(公告)号：US20130115763A1

公开(公告)日：2013-05-09

申请号：US13667541

申请日：2012-11-02

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/26 ,  H01L21/31

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US11302527B2

公开(公告)日：2022-04-12

申请号：US16998338

申请日：2020-08-20

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20180211834A1

公开(公告)日：2018-07-26

申请号：US15873776

申请日：2018-01-17

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/324 ,  H01L21/225 ,  H01L21/22

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20160196970A1

公开(公告)日：2016-07-07

申请号：US14846177

申请日：2015-09-04

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US09368352B2

公开(公告)日：2016-06-14

申请号：US14501653

申请日：2014-09-30

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/22 ,  H01L21/225 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.