公开(公告)号：US11302527B2

公开(公告)日：2022-04-12

申请号：US16998338

申请日：2020-08-20

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20190181034A1

公开(公告)日：2019-06-13

申请号：US16213479

申请日：2018-12-07

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C23C16/14 ,  C23C16/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L23/532

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20180211834A1

公开(公告)日：2018-07-26

申请号：US15873776

申请日：2018-01-17

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/324 ,  H01L21/225 ,  H01L21/22

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20180068885A1

公开(公告)日：2018-03-08

申请号：US15609497

申请日：2017-05-31

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  C23C16/02 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US20160196970A1

公开(公告)日：2016-07-07

申请号：US14846177

申请日：2015-09-04

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US09368352B2

公开(公告)日：2016-06-14

申请号：US14501653

申请日：2014-09-30

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/22 ,  H01L21/225 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US09257303B2

公开(公告)日：2016-02-09

申请号：US14613183

申请日：2015-02-03

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/44 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US20160005649A1

公开(公告)日：2016-01-07

申请号：US14737293

申请日：2015-06-11

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20190172708A1

公开(公告)日：2019-06-06

申请号：US16192494

申请日：2018-11-15

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/225 ,  H01L21/22 ,  H01L29/66

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US10157786B2

公开(公告)日：2018-12-18

申请号：US15356306

申请日：2016-11-18

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.