公开(公告)号：US20180196360A1

公开(公告)日：2018-07-12

申请号：US15742179

申请日：2016-06-17

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Laurentius Johannes Adrianus VAN BOKHOVEN ,  Christopher Charles WARD ,  Marc Léon VAN DER GAAG ,  Johan Gertrudis Cornelis KUNNEN

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70733 ,  G03F7/70783 ,  G03F7/70858 ,  G03F7/70891

Abstract: A lithographic apparatus (100) includes a patterning device support structure (104) configured to support a patterning device (110), a gas inlet (116) configured to provide a gas flow (114) across a surface of the patterning device, and a temperature conditioning device (134) configured to condition the temperature of the gas flow based on a set point. The apparatus also includes a sensor (132) configured to measure a parameter indicative of an amount of heat added to at least one of the patterning device and a volume (126) between the patterning device and a lens (124) of a projection system (106) during operational use of the lithographic system. Further, the apparatus includes a controller (130) operatively coupled to the sensor and configured to adjust the set point based on the parameter measured by the sensor to control a temperature of the patterning device.

公开(公告)号：US20220187715A1

公开(公告)日：2022-06-16

申请号：US17438314

申请日：2020-02-10

Applicant: ASML Netherlands B.V.

Inventor： Mhamed AKHSSAY ,  Laurentius Johannes Adrianus VAN BOKHOVEN

IPC: G03F7/20

Abstract: A method of predicting thermally induced aberrations of a projection system for projecting a radiation beam, the method comprising: calculating a change in temperature of the projection system from a power of the radiation beam output from the projection system using a dynamic linear function; and calculating the thermally induced aberrations from the calculated change in temperature using a static non-linear function.

公开(公告)号：US20190196345A1

公开(公告)日：2019-06-27

申请号：US16289875

申请日：2019-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Laurentius Johannes Adrianus VAN BOKHOVEN ,  Ruud Hendrikus Martinus Johannes BLOKS ,  Günes NAKIBOGLU ,  Marinus Jan REMIE ,  Johan Gertrudis Cornelis KUNNEN

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70716 ,  G03F7/70783 ,  G03F7/70858 ,  G03F7/70933

Abstract: An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.

公开(公告)号：US20170363973A1

公开(公告)日：2017-12-21

申请号：US15540649

申请日：2015-12-02

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Thomas VENTURINO ,  Geoffrey Alan SCHULTZ ,  Daniel Nicholas GALBURT ,  Daniel Nathan BURBANK ,  Santiago E. DELPUERTO ,  Herman VOGEL ,  Johannes ONVLEE ,  Laurentius Johannes Adrianus VAN BOKHOVEN ,  Christopher Charles WARD

IPC: G03F7/20

Abstract: An apparatus, system, and method cool a patterning device by supplying a non-uniform gas flow. The apparatus and system include a gas supply structure that supplies a gas flow across the first surface of the patterning device. The gas supply structure includes a gas supply nozzle specially configured to create a non-uniform gas flow distribution. A greater volume or velocity of the gas flow is directed to desired portion of the patterning device.

公开(公告)号：US20170131644A1

公开(公告)日：2017-05-11

申请号：US15321115

申请日：2015-06-01

Applicant: ASML Netherlands B.V.

Inventor： Giovanni Luca GATTOBIGIO ,  Erik Henricus Egidius Catharina EUMMELEN ,  Ruud OLIESLAGERS ,  Gerben PIETERSE ,  Cornelius Maria Rops ,  Laurentius Johannes Adrianus VAN BOKHOVEN

IPC: G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70341 ,  G03F7/709

Abstract: A lithographic apparatus including a projection system configured to project a patterned radiation beam onto a substrate and a fluid confinement structure configured to confine immersion fluid in a localized region between a final element of the projection system and a surface of the substrate. The lithographic apparatus is configured to have a space bounded on one side by a surface of the projection system and/or a component of the lithographic apparatus at least partially surrounding the final element of the projection system, and on the other side by a surface of the fluid confinement structure. The apparatus is configured to increase the humidity of the gas within the space.