公开(公告)号：US20200312619A1

公开(公告)日：2020-10-01

申请号：US16830204

申请日：2020-03-25

Applicant: ASML Netherlands B.V.

Inventor： Albertus Victor Gerardus MANGNUS ,  Maikel Robert GOOSEN ,  Erwin Paul SMAKMAN

IPC: H01J37/317 ,  H01J37/244 ,  H01J37/24 ,  H01J37/304

Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.

公开(公告)号：US20240005463A1

公开(公告)日：2024-01-04

申请号：US18369775

申请日：2023-09-18

Applicant: ASML Netherlands B.V.

Inventor： Shakeeb Bin HASAN ,  Maikel Robert GOOSEN

IPC: G06T5/10 ,  G06T5/50 ,  H01J37/22 ,  H01J37/28

CPC classification number: G06T5/10 ,  G06T5/50 ,  H01J37/222 ,  H01J37/28 ,  G06T2207/10061 ,  G06T2207/20056 ,  G06T2207/20192 ,  G06T2207/30148 ,  H01J2237/223

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image from a first electron beam scan with a parameter being a first quantity; obtaining a second SEM image from a second electron beam scan with the parameter being a second quantity different from the first quantity; and generating a reduced sample charging effect image based on convolution equations comprising a representation of the first SEM image, a representation of the second SEM image, a first point spread function corresponding to the first SEM image and a second point spread function corresponding to the second SEM image.

公开(公告)号：US20230154722A1

公开(公告)日：2023-05-18

申请号：US17361119

申请日：2019-12-17

Applicant: ASML Netherlands B.V.

Inventor： Arno Jan BLEEKER ,  Pieter Willem Herman DE JAGER ,  Maikel Robert GOOSEN ,  Erwin Paul SMAKMAN ,  Albertus Victor Gerardus MANGNUS ,  Yan REN ,  Adam LASSISE

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/1474 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817 ,  H01J2237/2448 ,  H01J2237/24475

Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

公开(公告)号：US20220199358A1

公开(公告)日：2022-06-23

申请号：US17601697

申请日：2020-03-25

Applicant: ASML Netherlands B.V.

Inventor： Maikel Robert GOOSEN ,  Albertus Victor Gerardus MANGNUS ,  Lucas KUINDERSMA

IPC: H01J37/22 ,  H01J37/28 ,  G06T7/00

Abstract: Embodiments consistent with the disclosure herein include methods for image enhancement for a multi-beam charged-particle inspection system. Systems and methods consistent with the present disclosure include analyzing signal information representative of first and second images, wherein the first image is associated with a first beam of a set of beams and the second image is associated with a second beam of the set of beams; detecting, based on the analysis, disturbances in positioning of the first and second beams in relation to a sample; obtaining an image of the sample using the signal information of the first and second beams; and correcting the image of the sample using the identified disturbances.

公开(公告)号：US20210249224A1

公开(公告)日：2021-08-12

申请号：US17054559

申请日：2019-05-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Erwin Paul SMAKMAN ,  Albertus Victor Gerardus MANGNUS ,  Maikel Robert GOOSEN

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20 ,  H01J37/04 ,  H01J37/244

Abstract: An electron beam apparatus including: an electron beam source configured to generate an electron beam; a beam conversion unit including an aperture array configured to generate a plurality of beamlets from the electron beam, and a deflector unit configured to deflect one or more groups of the plurality of beamlets; and a projection system configured to project the plurality of beamlets onto an object, wherein the deflector unit is configured to deflect the one or more groups of the plurality of beamlets to impinge on the object at different angles of incidence, each beamlet in a group having substantially the same angle of incidence on the object.

公开(公告)号：US20200272061A1

公开(公告)日：2020-08-27

申请号：US16650520

申请日：2018-09-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.