公开(公告)号：US20080286661A1

公开(公告)日：2008-11-20

申请号：US11884554

申请日：2007-02-27

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/32 ,  G03F1/29

摘要： A mask pattern including a light-shielding portion 101 and a semi-light-shielding portion 102 is provided on a transparent substrate 100 having a transparent property against exposing light so as to be surrounded with a transparent portion 104. The semi-light-shielding portion 102 is disposed in an outer region of the mask pattern and partially transmits the exposing light in an identical phase to the exposing light passing through the transparent portion 104.

摘要翻译： 在透明基板100上设置包括遮光部分101和半光屏蔽部分102的掩模图案，该透明基板100具有透明性以防曝光，以被透明部分104包围。 半光屏蔽部分102设置在掩模图案的外部区域中，并且以与穿过透明部分104的曝光相同的相位部分地透射曝光光。

公开(公告)号：US07404165B2

公开(公告)日：2008-07-22

申请号：US11217286

申请日：2005-09-02

申请人： Akio Misaka ,  Shinji Odanaka

发明人： Akio Misaka ,  Shinji Odanaka

IPC分类号： G06F17/50

CPC分类号： G06F17/5072 ,  G03F1/36 ,  G03F1/68 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

摘要： First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed.

摘要翻译： 首先，将逐个细胞地设计将最终制造LSI的多个电路图案，并且为所设计的电路图案进行初始放置。 接下来，对已经被初始放置为彼此相邻或相交的电路图案中的至少两个执行光学邻近校正，从而在相邻或交叉电路图案之外形成光学邻近校正图案。 然后，确定是否可以使用校正的图案有效地执行光学邻近校正。 如果校正的有效性被否定，则改变定义电路图案的设计规则以使校正有效。 此后，根据改变的设计规则再次放置初始放置的电路图案。

公开(公告)号：US07378198B2

公开(公告)日：2008-05-27

申请号：US11402065

申请日：2006-04-12

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03F1/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/32

摘要： A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.

摘要翻译： 设置在透明基板2上的掩模图案包括透光部分4，该半遮光部分3以与透光部分4相同的相位透射曝光光;以及移相器5，其以相对相反的相位透射曝光光 与透光部4的相反。 半光遮蔽部分3具有允许曝光光部分透射的透射率。 移相器5设置在掩模图案的区域中，透射通过移相器5的光可以抵消透过透光部分4和半透光部分3的一部分光。

公开(公告)号：US20070065730A1

公开(公告)日：2007-03-22

申请号：US10576120

申请日：2004-09-21

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F1/30

摘要： A pattern 121 provided on a transparent substrate 100 as a mask pattern includes partial patterns 121A and 121B. Each of the partial patterns 121A and 121B has a mask enhancer structure including a phase shifter 102 for transmitting exposing light in an opposite phase with respect to a transparent portion and a shielding portion 101 surrounding the phase shifter 102. The partial pattern 121A is close to other patterns 122 and 123 at distances not larger than a given distance with the transparent portion sandwiched therebetween. The width of the phase shifter 102A of the partial pattern 121A is smaller than the width of the phase shifter 102B of the partial pattern 121B.

摘要翻译： 设置在作为掩模图案的透明基板100上的图案121包括部分图案121A和121B。部分图案121A和121B中的每一个具有掩模增强器结构，该掩模增强器结构包括用于以相反相位发射曝光的移相器102 相对于透明部分和围绕移相器102的屏蔽部分101.部分图案121A以不大于给定距离的距离与其它图案122和123接近，其中透明部分夹在其间。 部分图案121A的移相器102A的宽度小于部分图案121B的移相器102B的宽度。

公开(公告)号：US07144684B2

公开(公告)日：2006-12-05

申请号：US11312349

申请日：2005-12-21

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00

CPC分类号： G03F1/29 ,  G03F1/32

摘要： A photomask includes a semi-light-shielding portion having a light-shielding property, a light-transmitting portion surrounded by the semi-light-shielding portion and a peripheral portion positioned in a periphery of the light-transmitting portion on a transparent substrate. The semi-light-shielding portion and the light-transmitting portion transmit the exposure light in the same phase each other, whereas the peripheral portion transmits the exposure light in a phase opposite to that of the light-transmitting portion. A phase shift film that transmits the exposure light in a phase opposite to that of the peripheral portion is formed on the transparent substrate in the semi-light-shielding portion formation region.

摘要翻译： 光掩模包括具有遮光性的半遮光部分，由半遮光部分包围的透光部分和位于透光部分的周边的周边部分。 半光屏蔽部分和透光部分以相同的相位彼此透射曝光光，而周边部分以与透光部分相反的相位透射曝光光。 在半遮光部形成区域中的透明基板上形成有以与周边部相反的方向透过曝光的相移膜。

公开(公告)号：US20060183034A1

公开(公告)日：2006-08-17

申请号：US11402065

申请日：2006-04-12

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/32

摘要： A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.

摘要翻译： 设置在透明基板2上的掩模图案包括透光部分4，该半遮光部分3以与透光部分4相同的相位透射曝光光;以及移相器5，其以相对相反的相位透射曝光光 与透光部4的相反。 半光遮蔽部分3具有允许曝光光部分透射的透射率。 移相器5设置在掩模图案的区域中，透射通过移相器5的光可以抵消透过透光部分4和半透光部分3的一部分光。

公开(公告)号：US20060099523A1

公开(公告)日：2006-05-11

申请号：US11312349

申请日：2005-12-21

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03F1/00

CPC分类号： G03F1/29 ,  G03F1/32

摘要： A photomask includes a semi-light-shielding portion having a light-shielding property, a light-transmitting portion surrounded by the semi-light-shielding portion and a peripheral portion positioned in a periphery of the light-transmitting portion on a transparent substrate. The semi-light-shielding portion and the light-transmitting portion transmit the exposure light in the same phase each other, whereas the peripheral portion transmits the exposure light in a phase opposite to that of the light-transmitting portion. A phase shift film that transmits the exposure light in a phase opposite to that of the peripheral portion is formed on the transparent substrate in the semi-light-shielding portion formation region.

公开(公告)号：US07001711B2

公开(公告)日：2006-02-21

申请号：US10688960

申请日：2003-10-21

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F1/36

摘要： An isolated light-shielding pattern formed from a light-shielding film region 101 and a phase shift region 102 is formed on a transparent substrate 100 serving as a mask. The phase shift region 102 has a phase difference with respect to a light-transmitting region of the transparent substrate 100. Moreover, the width of the phase shift region 102 is set such that a light-shielding property of the phase shift region 102 becomes at least about the same as that of a light-shielding film having the same width.

摘要翻译： 在作为掩模的透明基板100上形成由遮光膜区域101和相移区域102形成的隔离的遮光图案。 相移区域102相对于透明基板100的透光区域具有相位差。 此外，相移区域102的宽度被设定为使得相移区域102的遮光性能至少与具有相同宽度的遮光膜的光屏蔽性能相同。

公开(公告)号：US06691297B1

公开(公告)日：2004-02-10

申请号：US09517617

申请日：2000-03-03

申请人： Akio Misaka ,  Shinji Odanaka

发明人： Akio Misaka ,  Shinji Odanaka

IPC分类号： G06F1750

CPC分类号： G06F17/5072 ,  G03F1/36 ,  G03F1/68 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

摘要： First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed.

公开(公告)号：US20110262849A1

公开(公告)日：2011-10-27

申请号：US13178256

申请日：2011-07-07

申请人： Shigeo IRIE ,  Akio Misaka ,  Yuji Nonami ,  Tetsuya Nakamura ,  Chika Harada

发明人： Shigeo IRIE ,  Akio Misaka ,  Yuji Nonami ,  Tetsuya Nakamura ,  Chika Harada

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/32 ,  G03F1/29

摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.

摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。