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公开(公告)号：US08278014B2
公开(公告)日：2012-10-02
申请号：US13178256
申请日：2011-07-07
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。
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公开(公告)号：US20090061330A1
公开(公告)日：2009-03-05
申请号：US12200478
申请日：2008-08-28
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。
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公开(公告)号：US20110262849A1
公开(公告)日：2011-10-27
申请号：US13178256
申请日：2011-07-07
申请人： Shigeo IRIE , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo IRIE , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。
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公开(公告)号：US07998641B2
公开(公告)日：2011-08-16
申请号：US12200478
申请日：2008-08-28
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。
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公开(公告)号：US08007959B2
公开(公告)日：2011-08-30
申请号：US12181650
申请日：2008-07-29
申请人： Yuji Nonami , Akio Misaka , Shigeo Irie
发明人： Yuji Nonami , Akio Misaka , Shigeo Irie
摘要： A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.
摘要翻译： 光掩模包括具有不透光的透明性的基板和形成在透明基板上的半色调部分。 在半色调部分中，形成具有第一尺寸的第一开口和具有大于第一尺寸的第二尺寸的第二开口。 在透明基板上形成遮光部，配置在第二开口周围。
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公开(公告)号：US20090061328A1
公开(公告)日：2009-03-05
申请号：US12181650
申请日：2008-07-29
申请人： Yuji NONAMI , Akio Misaka , Shigeo Irie
发明人： Yuji NONAMI , Akio Misaka , Shigeo Irie
摘要： A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.
摘要翻译： 光掩模包括具有不透光的透明性的基板和形成在透明基板上的半色调部分。 在半色调部分中，形成具有第一尺寸的第一开口和具有大于第一尺寸的第二尺寸的第二开口。 在透明基板上形成遮光部，配置在第二开口周围。
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7.发明授权Semiconductor device, mask for fabrication of semiconductor device, and optical proximity correction method 有权半导体装置，半导体装置制造用掩模和光学邻近校正方法公开(公告)号：US08330248B2
公开(公告)日：2012-12-11
申请号：US13014346
申请日：2011-01-26
申请人： Yasuko Tabata , Akio Misaka , Takehiro Hirai , Hideyuki Arai , Yuji Nonami
发明人： Yasuko Tabata , Akio Misaka , Takehiro Hirai , Hideyuki Arai , Yuji Nonami
IPC分类号： H01L31/23
CPC分类号： G06F17/5068 , G03F1/36 , G03F1/38 , H01L21/28123 , H01L21/31144 , H01L21/32139 , H01L27/0207
摘要： A semiconductor device includes a circuit portion including at least one real feature, and a plurality of dummy feature groups each including a plurality of dummy features spaced apart from each other by a first distance. The plurality of dummy feature groups are spaced apart from each other by a second distance larger than the first distance, and the circuit portion and the plurality of dummy feature groups are spaced apart from each other by the second distance.
摘要翻译： 半导体器件包括包括至少一个实际特征的电路部分和多个虚拟特征组，每个虚拟特征组包括彼此间隔开第一距离的多个虚拟特征。 多个虚拟特征组彼此间隔开大于第一距离的第二距离，并且电路部分和多个虚拟特征组彼此间隔开第二距离。
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8.发明申请SEMICONDUCTOR DEVICE, MASK FOR FABRICATION OF SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY CORRECTION METHOD 有权半导体器件，半导体器件制造掩模和光学临近校正方法公开(公告)号：US20110278679A1
公开(公告)日：2011-11-17
申请号：US13014346
申请日：2011-01-26
申请人： Yasuko Tabata , Akio Misaka , Takehiro Hirai , Hideyuki Arai , Yuji Nonami
发明人： Yasuko Tabata , Akio Misaka , Takehiro Hirai , Hideyuki Arai , Yuji Nonami
IPC分类号： H01L27/088 , G03F1/00 , G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G03F1/38 , H01L21/28123 , H01L21/31144 , H01L21/32139 , H01L27/0207
摘要： A semiconductor device includes a circuit portion including at least one real feature, and a plurality of dummy feature groups each including a plurality of dummy features spaced apart from each other by a first distance. The plurality of dummy feature groups are spaced apart from each other by a second distance larger than the first distance, and the circuit portion and the plurality of dummy feature groups are spaced apart from each other by the second distance.
摘要翻译： 半导体器件包括包括至少一个实际特征的电路部分和多个虚拟特征组，每个虚拟特征组包括彼此间隔开第一距离的多个虚拟特征。 多个虚拟特征组彼此间隔开大于第一距离的第二距离，并且电路部分和多个虚拟特征组彼此间隔开第二距离。
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9.发明授权Photomask, fabrication method for the same and pattern formation method using the same 失效光掩模，相同的制造方法和使用该掩模的图案形成方法公开(公告)号：US07771902B2
公开(公告)日：2010-08-10
申请号：US11884451
申请日：2007-02-27
申请人： Akio Misaka
发明人： Akio Misaka
摘要： A mask pattern including, for example, a light-shielding portion 101 and a first transparent portion 104A surrounded with a semi-light-shielding portion 102 are provided on a transparent substrate 100. The mask pattern includes a first pattern region and a second pattern region opposing each other with the semi-light-shielding portion 102 and the first transparent portion 104A sandwiched therebetween.
摘要翻译： 包括例如遮光部分101和由半光屏蔽部分102围绕的第一透明部分104A的掩模图案设置在透明基板100上。掩模图案包括第一图案区域和第二图案 区域与半遮光部分102和夹在其间的第一透明部分104A相对。
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公开(公告)号：US20060183035A1
公开(公告)日：2006-08-17
申请号：US11402947
申请日：2006-04-13
申请人： Akio Misaka
发明人： Akio Misaka
摘要： A photomask has a semi-light-shielding portion having a light-shielding property and a light-transmitting portion surrounded by the semi-light-shielding portion, and a peripheral portion positioned in the periphery of the light-transmitting portion. The semi-light-shielding portion and the light-transmitting portion transmit exposure light in the same phase, whereas the peripheral portion transmits exposure light in a phase opposite to that of the light-transmitting portion.
摘要翻译： 光掩模具有遮光性的半遮光部和被半光遮蔽部包围的透光部以及位于透光部的周缘的周边部。 半光屏蔽部分和透光部分以相同的相位发射曝光光，而周边部分以与透光部分相反的相位透射曝光光。
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