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    Nucleic acid of novel human kinesin-related gene protein encoded by the nucleic acid peptide fragment thereof and anticancer agents comprising the nucleic acid and the like
    11.
    发明授权
    Nucleic acid of novel human kinesin-related gene protein encoded by the nucleic acid peptide fragment thereof and anticancer agents comprising the nucleic acid and the like 有权
    由其核酸肽片段编码的新型人驱动蛋白相关基因蛋白质的核酸和包含核酸等的抗癌剂

    公开(公告)号：US07214782B2

    公开(公告)日：2007-05-08

    申请号：US10381792

    申请日：2001-10-01

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： C07H21/04

    CPC分类号： C07K14/47 ,  A61K38/00 ,  A61K48/00

    摘要： There are provided base sequence data for human kinesin-related genes with a motor domain, as well as information relating to the functions of the proteins encoded by the human kinesin-related gene and the motor domain-lacking human kinesin-related gene, which data may be utilized for diagnosis (for example, judging prognosis of neuroblastoma) and treatment (particularly as antisense nucleic acids for malignant tumors).

    摘要翻译： 提供了与运动结构域相关的人类驱动蛋白相关基因的碱基序列数据，以及与人驱动蛋白相关基因编码的蛋白质和缺乏运动区的驱动蛋白相关基因的功能相关的信息，该数据 可用于诊断（例如，判断神经母细胞瘤的预后）和治疗（特别是用于恶性肿瘤的反义核酸）。

    Nucleic acids having expression differentails between hepatoblastoma and normal liver
    12.
    发明申请
    Nucleic acids having expression differentails between hepatoblastoma and normal liver 失效
    在肝母细胞瘤和正常肝脏之间具有表达差异的核酸

    公开(公告)号：US20050042613A1

    公开(公告)日：2005-02-24

    申请号：US10487422

    申请日：2002-08-26

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： C07K14/47 ,  C12N15/12 ,  C12Q1/68 ,  G01N33/574 ,  C07H21/04

    CPC分类号： G01N33/57496 ,  C07K14/4748 ,  C12Q1/6886 ,  C12Q2600/118 ,  C12Q2600/158

    摘要： A nucleic acid comprising any one of base sequences set forth in SEQ ID NO:1 to NO:104 in the Sequence Listing and a protein encoded by the nucleic acid, particularly a nucleic acid displaying differential expression levels in hepatoblastoma and normal liver based on comparison therebetween and a protein encoded by the nucleic acid as well as tumor detection utilizing the foregoing.

    摘要翻译： 包含序列表中SEQ ID NO：1至NO：104所示的碱基序列中的任一种的核酸和由核酸编码的蛋白质，特别是基于比较显示肝母细胞瘤和正常肝脏中差异表达水平的核酸 和由核酸编码的蛋白质以及利用前述物质的肿瘤检测。

    Method for producing a read-only memory having a plurality of MISFET
    13.
    发明授权
    Method for producing a read-only memory having a plurality of MISFET 失效
    一种具有多个MISFET的只读存储器的制造方法

    公开(公告)号：US5278089A

    公开(公告)日：1994-01-11

    申请号：US886737

    申请日：1992-05-21

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： G11C17/12 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/70 ,  H01L27/00

    CPC分类号： G11C17/126 ,  Y10S438/981

    摘要： A read-only memory device includes a number of MIS transistors forming memory cells arranged in a matrix configuration to provide a NOR type memory device with high current driving capability for the memory cells. Bit lines and column lines are arrayed alternately in common in each cell column so as to be used in common by adjacent memory cells in the word line extending direction. The bit lines for reading out signals from the memory cells function as the sources or drains of the MIS transistors of the memory cells, whereas the column lines for supplying the constant voltage to the memory cells function as the drains or sources of the MIS transistors of the memory cells. For column selection, there is provided a first selection switch for selecting a group consisting of a plurality of bit lines and a plurality of column lines. A second selection switch and a third selection switch are provided for selecting the bit line and the column line of the group, respectively. The second and the third selection switches may be arranged with a layout allowance and, if these second and third selection switches are formed by MIS transistors similar to those of the memory cells, the direction in common with the memory cells may be the channel direction to contribute to improved circuit integration. The MIS transistor constituting the memory cell may be of such a construction in which the source and drain regions may be provided below the thick insulating film formed on the substrate surface, such as field oxide film.

    摘要翻译： 只读存储器件包括多个MIS晶体管，形成以矩阵配置布置的存储器单元，以为存储器单元提供具有高电流驱动能力的NOR型存储器件。 位线和列线在每个单元列中共同交替排列，以便在字线延伸方向上被相邻存储单元共同使用。 用于从存储器单元读出信号的位线用作存储器单元的MIS晶体管的源极或漏极，而用于向存储器单元提供恒定电压的列线用作MIS晶体管的漏极或源极 记忆细胞。 为了列选择，提供了用于选择由多个位线和多个列线组成的组的第一选择开关。 提供第二选择开关和第三选择开关，用于分别选择组的位线和列线。 第二选择开关和第三选择开关可以布置为布局容许，并且如果这些第二和第三选择开关由与存储器单元相似的MIS晶体管形成，则与存储单元共同的方向可以是通道方向 有助于改善电路集成度。 构成存储单元的MIS晶体管可以具有这样的结构，其中源区和漏区可以设置在形成在衬底表面上的厚绝缘膜的下方，例如场氧化物膜。

    Nucleic acids isolated in neuroblastoma
    15.
    发明授权
    Nucleic acids isolated in neuroblastoma 有权
    神经母细胞瘤中分离的核酸

    公开(公告)号：US07335755B2

    公开(公告)日：2008-02-26

    申请号：US10478914

    申请日：2002-05-30

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： C07H21/02

    CPC分类号： C07K14/47

    摘要： There are disclosed a nucleic acid whose expression is enhanced in human neuroblastoma with unfavorable prognosis based on comparison between human neuroblastoma with favorable prognosis and human neuroblastoma with unfavorable prognosis, the nucleic acid comprising any one of base sequences set forth in SEQ ID NO:1 to NO:69 in the Sequence Listing, a nucleic acid comprising a portion of any of those base sequences, and an isolated nucleic acid capable of hybridizing to a complementary base sequence of the foregoing under stringent conditions. It discloses gene sequences relating to favorable or unfavorable prognosis of neuroblastoma and will enable the provision of their genetic information and the diagnosis of favorable or unfavorable prognosis.

    摘要翻译： 已经公开了基于具有良好预后的人神经母细胞瘤和具有不利预后的人神经母细胞瘤之间的比较，在具有不利预后的人神经母细胞瘤中其表达增强的核酸，所述核酸包含SEQ ID NO：1至SEQ ID NO： 序列表中的NO：69，包含这些碱基序列中任一种的一部分的核酸，以及在严格条件下能够与上述互补碱基序列杂交的分离的核酸。 它公开了与神经母细胞瘤有利或不利预后相关的基因序列，并且能够提供其遗传信息和诊断有利或不利的预后。

    Compositions and methods of making and using human full length TRK-B
    17.
    发明授权
    Compositions and methods of making and using human full length TRK-B 失效
    制作和使用人类全长TRK-B的组合物和方法

    公开(公告)号：US5601820A

    公开(公告)日：1997-02-11

    申请号：US271454

    申请日：1994-07-07

    申请人： Garrett M. Brodeur ,  Akira Nakagawara

    发明人： Garrett M. Brodeur ,  Akira Nakagawara

    IPC分类号： C07K14/71 ,  A61K39/395 ,  C07H21/02 ,  C12P19/34 ,  C12Q1/68

    CPC分类号： C07K14/71

    摘要： The amino acid sequence of the full length version of the human neurotrophic factor receptor TRK B and a nucleotide sequence encoding it are disclosed. Transformed host cells and transgenic animals containing nucleic acid molecules encoding full length human TRK-B are disclosed. Probes, primers and antisense molecules identical and complementary to the nucleotide sequence that encodes full length human TRK-B, particularly the intracellular portion of the receptor are disclosed. Monoclonal antibodies that bind to the full length human TRK-B protein are disclosed. Methods of using and kits which include probes, primers, antisense molecules and monoclonal antibodies are disclosed.

    摘要翻译： 公开了人类神经营养因子受体TRK B的全长版本的氨基酸序列和编码它的核苷酸序列。 公开了转化的宿主细胞和含有编码全长人TRK-B的核酸分子的转基因动物。 公开了与编码全长人TRK-B的核苷酸序列相同和互补的探针，引物和反义分子，特别是受体的细胞内部分。 公开了与全长人TRK-B蛋白结合的单克隆抗体。 公开了使用方法和包括探针，引物，反义分子和单克隆抗体的试剂盒。

    Semiconductor memory device with address transition detector
    18.
    发明授权
    Semiconductor memory device with address transition detector 失效
    具有地址转换检测器的半导体存储器件

    公开(公告)号：US5566129A

    公开(公告)日：1996-10-15

    申请号：US24272

    申请日：1993-02-26

    申请人： Katsuya Nakashima ,  Shumpei Kohri ,  Akira Nakagawara

    发明人： Katsuya Nakashima ,  Shumpei Kohri ,  Akira Nakagawara

    IPC分类号： G11C8/18 ,  G11C8/00

    CPC分类号： G11C8/18

    摘要： A semiconductor memory device with an address transition detector comprises a flip-flop circuit (FF) having set and reset input terminals and a delay circuit (3). A pulse signal is input to a set input terminal (S) of the flip-flop circuit (FF) and an output signal (P) of the flip-flop circuit (FF) is input through the delay circuit (3) to a reset terminal (R) of the flip-flop circuit (FF), whereby a constant width signal which is independent of a waveform of an address signal and which responds only to the change of address can be obtained as an address transition signal of a SRAM (static random access memory). An internal circuit of the SRAM is initialized by the constant width signal, thereby preventing a malfunction caused by the fact that an initialization time depends on the waveform of the address signal.

    摘要翻译： 具有地址转换检测器的半导体存储器件包括具有置位和复位输入端的触发器电路（FF）和延迟电路（3）。 脉冲信号被输入到触发电路（FF）的设定输入端（S），并且触发电路（FF）的输出信号（P）通过延迟电路（3）输入到复位 触发器电路（FF）的端子（R），由此可以获得与地址信号的波形无关并且仅响应于地址变化的恒定宽度信号作为SRAM的地址转换信号 静态随机存取存储器）。 SRAM的内部电路由恒定宽度信号初始化，从而防止由初始化时间取决于地址信号的波形的事实引起的故障。

    Balanced differential amplifier
    19.
    发明授权
    Balanced differential amplifier 失效
    平衡差分放大器

    公开(公告)号：US4728900A

    公开(公告)日：1988-03-01

    申请号：US847539

    申请日：1986-04-03

    申请人： Akira Nakagawara ,  Kazuo Watanabe

    发明人： Akira Nakagawara ,  Kazuo Watanabe

    IPC分类号： G11C11/34 ,  G11C11/409 ,  H03F3/45

    CPC分类号： H03F3/4565 ,  H03F3/45183 ,  H03F2203/45364 ,  H03F2203/45674

    摘要： In a balanced differential amplifier, a constant current source MOS FET operable in an unsaturated region is usually incorporated. When noise is inputted to the differential amplifier, the current source FET undergoes an influence of noise level superposed upon the input signal DC voltage thereof, thus deteriorating the constant current characteristics. To overcome this problem, a pair of current source MOS FETs are additionally incorporated therewith. Since the two current source MOS FETs operate near a boundary between saturated and unsaturated regions and further the gate voltages applied thereto varies in out-of-phase relationship to each other in response to input signal fluctuations, it is possible to keep constant the sum total of two currents flowing through the two constant current MOS FETs, thus improving the overall constant current characteristics and therefore the suppression capability against noise inputted in phase to the amplifier.

    摘要翻译： 在平衡差分放大器中，通常并入可在不饱和区域中工作的恒流源MOS FET。 当噪声被输入到差分放大器时，电流源FET受到叠加在其输入信号DC电压上的噪声电平的影响，从而劣化恒定电流特性。 为了克服这个问题，还附加了一对电流源MOS FET。 由于两个电流源MOS FET在饱和和不饱和区域之间的边界附近操作，并且另外施加于其上的栅极电压响应于输入信号波动而以异相关系变化，可以保持恒定的总和 的两个电流流过两个恒流MOS FET，从而提高总体恒定电流特性，从而提高对放大器相位输入的噪声的抑制能力。