摘要:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
摘要:
An objective having a plurality of optical elements arranged to image a pattern from an object field in an object surface of the objective to an image field in an image surface region of the objective at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength λ, includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion Δni=ni(λ0)−ni(λ0+1 pm) for a wavelength variation of 1 pm from a wavelength λ0. The objective satisfies the relation ∑ i = 1 N Δ n i ( s i - d i ) λ 0 NA 4 ≤ A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.
摘要:
A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth Δλ>10 pm around a central operating wavelength λ>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate. The projection objective is a catadioptric projection objective having at least one concave mirror arranged in a region of a pupil surface of the projection objective, and a negative group having at least one negative lens arranged in direct proximity to the concave mirror in a region near the pupil surface, where a marginal ray height (MRH) of the imaging is greater than a chief ray height (CRH).
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
摘要:
An objective having a plurality of optical elements arranged to image a pattern from an object field to an image field at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength λ includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion Δni=ni(λ0)−ni(λ0+1 pm) for a wavelength variation of 1 pm from a wavelength λ0. The objective satisfies the relation ∑ i = 1 N Δ n i ( s i - d i ) λ 0 NA 4 ≤ A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.
摘要:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.