Abstract:
A sensor integrated circuit includes an energy storage device having a first terminal coupled to a functional circuit and a blocking circuit coupled between a power supply pin and the first terminal of the energy storage device. The blocking circuit permits the energy storage device to store energy from an external power supply coupled to the power pin. The first terminal of the energy storage device is inaccessible from outside of the sensor IC. Additional features of the sensor IC can include a high regulator, a low regulator, and a low power circuit.
Abstract:
A circuit includes a current source having at least first terminal and a second, control terminal. The current source is configured to receive a current control signal at the control terminal and in response thereto generates a first current signal at the first terminal. The current control signal controls a current level of the first current signal. The circuit also includes at least one sensing element responsive to one or more sense parameters and having an input adapted to couple to the first terminal of said current source. The sensing element is configured to receive one or more current signals comprising at least the first current signal and in response thereto generates a sensed output signal at an output thereof. A corresponding method for operating the circuit is also provided.
Abstract:
A magnetic field sensor includes a lead frame, a passive component, semiconductor die supporting a magnetic field sensing element and attached to the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a ferromagnetic mold material secured to a portion of the non-conductive mold material. The lead frame has a recessed region and the passive component is positioned in the recessed region. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet.
Abstract:
A magnetic field sensor includes a lead frame, a passive component, semiconductor die supporting a magnetic field sensing element and attached to the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a ferromagnetic mold material secured to a portion of the non-conductive mold material. The lead frame has a recessed region and the passive component is positioned in the recessed region. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet.
Abstract:
A magnetic field sensor includes a plurality of magnetic field sensing elements configured to generate at least two measured magnetic field signals indicative of a magnetic field affected by an object and having a first predetermined phase difference with respect to each other and a controller responsive to the at least two measured magnetic field signals. The controller is configured to generate at least one virtual magnetic field signal having a second predetermined phase difference with respect to at least one of the measured magnetic field signals. In embodiments, the virtual magnetic field signal has the second predetermined phase difference with respect to each of the at least two measured magnetic field signals.
Abstract:
A magnetic field sensor can sense a movement of an object along a path. A movement line is tangent to the path. The magnetic field sensor can include a semiconductor substrate. The semiconductor substrate can have first and second orthogonal axes orthogonal to each other on the first surface of the substrate. A projection of the movement line onto a surface of the semiconductor substrate is only substantially parallel to the first orthogonal axis. The magnetic field sensor can also include first, second, third, and fourth magnetic field sensing elements disposed on the substrate. The first and second magnetic field sensing elements have maximum response axes parallel to the first orthogonal axis and the second and fourth magnetic field sensing elements have maximum response axes parallel to the second orthogonal axis. Signals generated by the second and fourth magnetic field sensing elements can be used as reference signals.
Abstract:
Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. The magnetic field sensors employ both planar Hall effect elements and vertical Hall effect elements to generate two-state signals in two different signal paths with relative phases that are ninety degrees apart, the ninety degrees having sufficient margin to aid in detection of the direction of motion. Other magnetic field sensors use at least four vertical Hall effect elements to identify a speed of rotation and a direction of rotation of a moving ferromagnetic object.
Abstract:
Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. Particular arrangements of magnetic field sensing elements within the magnetic field sensor can automatically cancel offset variations in the magnetic field sensing elements.
Abstract:
An integrated magnetic field sensor includes a magnetic field sensing circuit and a power driving circuit disposed upon or within a common substrate. A method of powering on and off a load uses the above integrated magnetic field sensor.