专利检索 ap:("Andras Sugar" OR "Laszlo Fabry") AND inv:"Laszlo Fabry" 第 2 页

11.

发明授权
Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby 失效
标题翻译：由此制造具有有利氧化性能的储存稳定的硅晶片表面和硅晶片的工艺

公开(公告)号：US5352637A

公开(公告)日：1994-10-04

申请号：US961083

申请日：1992-10-14

申请人： Laszlo Fabry , Manfred Grundner , Dieter Graef , Susanne Bauer-Mayer , Peter John

发明人： Laszlo Fabry , Manfred Grundner , Dieter Graef , Susanne Bauer-Mayer , Peter John

IPC分类号： H01L21/02 , H01L21/312 , H01L21/316 , H01L21/302

CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/3121 , H01L21/31662 , Y10S438/974

摘要： A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.

摘要翻译： 一种生产具有储存稳定表面并且可以直接热氧化的硅晶片的方法，也就是说，没有先前的HF浸渍浴，并且不加入含卤素的气体，可以实现相等或比通过包括这些措施实现的更好的氧化结果。