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    Flexible display
    11.
    发明授权
    Flexible display 有权

    公开(公告)号：US09601557B2

    公开(公告)日：2017-03-21

    申请号：US13837311

    申请日：2013-03-15

    Applicant: Apple Inc.

    Inventor： Byung Duk Yang ,  John Z. Zhong ,  Shih Chang Chang ,  Vasudha Gupta ,  Young Bae Park

    IPC: H01L27/32 ,  H01L27/12

    CPC classification number: H01L27/3276 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L2251/5338

    Abstract: A flexible display having an array of pixels or sub-pixels is provided. The display includes a flexible substrate and an array of thin film transistors (TFTs) corresponding to the array of pixels or sub-pixels on the substrate. The display also includes a first plurality of metal lines coupled to gate electrodes of the TFTs and a second plurality of metal lines coupled to source electrodes and drain electrodes of the TFTs. At least one of the first plurality of metal lines and the second plurality of metal lines comprises a non-stretchable portion in the TFT areas and a stretchable portion outside the TFT areas.

    Silicon and semiconducting oxide thin-film transistor displays
    12.
    发明授权
    Silicon and semiconducting oxide thin-film transistor displays 有权
    硅和半导体氧化物薄膜晶体管显示器

    公开(公告)号：US09543370B2

    公开(公告)日：2017-01-10

    申请号：US14494931

    申请日：2014-09-24

    Applicant: Apple Inc.

    Inventor： Tsung-Ting Tsai ,  Vasudha Gupta ,  Chin-Wei Lin

    IPC: H01L27/32 ,  H01L29/786 ,  H01L51/00

    CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78651 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2251/5338 ,  Y02E10/549

    Abstract: An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor. Each drive transistor may be adjusted to control how much current flows through the organic light-emitting diode. Each pixel circuit may include one or more additional transistors such as switching transistors and a storage capacitor. Semiconducting oxide transistors and silicon transistors may be used in forming the transistors of the pixel circuits. The storage capacitors and the transistors may be formed using metal layers, semiconductor structures, and dielectric layers. Some of the layers may be removed along the edge of the display to facilitate bending. The dielectric layers may have a stepped profile that allows data lines in the array to be stepped down towards the surface of the substrate as the data lines extend into an inactive edge region.

    Abstract translation: 电子设备显示器可以具有像素电路阵列。 每个像素电路可以包括有机发光二极管和驱动晶体管。 可以调节每个驱动晶体管以控制流过有机发光二极管的电流量。 每个像素电路可以包括一个或多个附加晶体管，例如开关晶体管和存储电容器。 半导体氧化物晶体管和硅晶体管可以用于形成像素电路的晶体管。 存储电容器和晶体管可以使用金属层，半导体结构和电介质层形成。 一些层可以沿着显示器的边缘去除以便于弯曲。 电介质层可以具有阶梯形轮廓，当数据线延伸到无源边缘区域时，允许阵列中的数据线朝着衬底的表面逐步降低。

    Flexible Display With Bent Edge Regions
    13.
    发明申请
    Flexible Display With Bent Edge Regions 审中-公开
    带弯曲边缘区域的灵活显示

    公开(公告)号：US20160079281A1

    公开(公告)日：2016-03-17

    申请号：US14954805

    申请日：2015-11-30

    Applicant: Apple Inc.

    Inventor： Young Bae Park ,  Shih Chang Chang ,  Vasudha Gupta

    IPC: H01L27/12

    CPC classification number: H01L27/124 ,  H01L27/1218 ,  H01L27/1259 ,  H01L27/3276 ,  H01L51/0097 ,  H01L2251/5338 ,  Y02E10/549

    Abstract: An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.

    Abstract translation: 电子设备可以具有柔性显示器，其具有沿着弯曲轴线弯曲的部分。 显示器可以具有诸如有源区域中的显示像素阵列的显示电路。 接触焊盘可以形成在显示器的无效区域中。 信号线可将显示像素耦合到接触垫。 信号线可能与显示器的非活动区域中的弯曲轴重叠。 在制造期间，可以在显示器上形成与弯曲轴线重叠的蚀刻停止。 蚀刻停止可以防止在聚合物柔性显示基板上的诸如缓冲层之类的电介质的过度蚀刻。 用作中性应力平面调整层的聚合物层可以形成在显示器的无效区域中的信号线上。 弯曲时，中性应力平面调整层有助于防止信号线中的应力。

    Flexible Displays with Strengthened Pad Area
    14.
    发明申请
    Flexible Displays with Strengthened Pad Area 有权
    灵活显示器加强垫区域

    公开(公告)号：US20150268775A1

    公开(公告)日：2015-09-24

    申请号：US14497086

    申请日：2014-09-25

    Applicant: Apple Inc.

    Inventor： Da Yu ,  Jae Won Choi ,  Sang Ha Kim ,  Vasudha Gupta ,  Young Bae Park

    IPC: G06F3/041 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56

    CPC classification number: H01L27/3244 ,  H01L27/3276 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/5338

    Abstract: An electronic device may have a flexible display with portions that can be bent. The display may include an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Display circuitry in the active area may exhibit a given stack height, whereas display circuitry in the inactive area may exhibit a stack height that is less than the given stack height. In particular, the contact pads may be formed directly on a multi-buffer layer that sits directly on a flexible display substrate. Passivation material may be selectively formed only at the edges of the contact pad on the multi-buffer layer. The multi-buffer layer may be formed at a distance from the edge of the flexible display substrate to minimize cracking in the multi-buffer layer.

    Abstract translation: 电子设备可以具有可弯曲部分的柔性显示器。 显示器可以包括活动区域中的显示像素阵列。 接触焊盘可以形成在显示器的无效区域中。 有源区域中的显示电路可能呈现给定的堆叠高度，而非活动区域中的显示电路可能表现出小于给定堆叠高度的堆叠高度。 特别地，接触焊盘可以直接形成在直接位于柔性显示器基板上的多缓冲层上。 钝化材料可以仅选择性地形成在多缓冲层上的接触焊盘的边缘处。 多缓冲层可以形成在距离柔性显示基板的边缘一定距离处，以最小化多缓冲层中的裂纹。

    Back Channel Etch Metal-Oxide Thin Film Transistor and Process
    15.
    发明申请
    Back Channel Etch Metal-Oxide Thin Film Transistor and Process 有权
    背沟道蚀刻金属氧化物薄膜晶体管和工艺

    公开(公告)号：US20130337596A1

    公开(公告)日：2013-12-19

    申请号：US13913373

    申请日：2013-06-07

    Applicant: Apple Inc.

    Inventor： Ming-Chin Hung ,  Shih Chang Chang ,  Vasudha Gupta ,  Young Bae Park

    IPC: H01L51/56

    CPC classification number: H01L51/56 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323

    Abstract: A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.

    Abstract translation: 提供了一种用于制造有机发光二极管（OLED）显示器的方法。 该方法包括形成包括第一金属层和第二金属层的薄膜晶体管（TFT）基板。 该方法还包括在第二金属层上沉积第一钝化层，以及在沟道区域和存储电容器区域上形成第三金属层。 第三金属层被配置为连接到第二金属层的第一部分，其被构造成通过栅极绝缘体和第一钝化层在第一通孔中连接到第一金属层。 该方法还包括在第三金属层上沉积第二钝化层，以及在第二钝化层上形成阳极层。 阳极被配置为连接到第三金属层的第二部分，其被配置为在第一钝化层和第二钝化层的第二通孔中连接到第二金属层。

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors
    20.
    发明申请
    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors 有权

    公开(公告)号：US20220037374A1

    公开(公告)日：2022-02-03

    申请号：US17502909

    申请日：2021-10-15

    Applicant: Apple Inc.

    Inventor： Vasudha Gupta ,  Jae Won Choi ,  Shih Chang Chang ,  Tsung-Ting Tsai ,  Young Bae Park

    IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

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