公开(公告)号：US20220319836A1

公开(公告)日：2022-10-06

申请号：US17697058

申请日：2022-03-17

Applicant: Applied Materials, Inc.

Inventor： Michael Chudzik ,  Ria Someshwar ,  Daniel Deyo ,  Michel Khoury ,  Sha Zhao

IPC: H01L21/02 ,  H01L21/033

Abstract: Exemplary processing methods include forming a nucleation layer on a substrate. The nucleation layer may be formed by physical vapor deposition (PVD), and the physical vapor deposition may be characterized by a deposition temperature of greater than or about 700° C. The methods may further include forming a patterned mask layer on the nucleation layer. The patterned mask layer may include openings that expose portions of the nucleation layer. Gallium-and-nitrogen-containing regions may be formed on the exposed portions of the nucleation layer. In additional embodiments, the nucleation layer may include a first and second portion separated by an interlayer that stop the propagation of at least some dislocations in the nucleation layer.

公开(公告)号：US20220293821A1

公开(公告)日：2022-09-15

申请号：US17197493

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Michael Chudzik ,  Michel Khoury ,  Max Batres

IPC: H01L33/32 ,  H01L33/22 ,  H01L33/00

Abstract: Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium- and-nitrogen-containing region.