公开(公告)号：US20040200733A1

公开(公告)日：2004-10-14

申请号：US10837955

申请日：2004-05-03

Applicant: Applied Materials, Inc.

Inventor： Ralph Wadensweiler ,  Alain Duboust ,  Liang-Yuh Chen ,  Manoocher Birang ,  Ratson Morad ,  Paul D. Butterfield

IPC: B24B001/00

CPC classification number: B23H5/08 ,  C25F7/00

Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a conductive polishing pad and an electrode having a membrane disposed therebetween. The membrane is orientated relative the conductive pad in a manner that facilitates removal of entrained gas from electrolyte flowing towards the conductive pad. The apparatus may be part of an electro-chemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.

Abstract translation: 提供了一种用于抛光衬底表面的方法和装置。 一方面，用于抛光衬底的装置包括导电抛光垫和在其间设置有膜的电极。 膜以相对于导电垫的方向定向，以便于从电解液中流出的夹带气体去除导电垫。 该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

公开(公告)号：US20030022501A1

公开(公告)日：2003-01-30

申请号：US10199444

申请日：2002-07-19

Applicant: Applied Materials, Inc.

Inventor： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

IPC: H01L021/461 ,  H01L021/302 ,  H01L021/4763

CPC classification number: H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract translation: 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。