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    System architecture of semiconductor manufacturing equipment
    1.
    发明申请
    System architecture of semiconductor manufacturing equipment 失效
    半导体制造设备的系统架构

    公开(公告)号：US20040087154A1

    公开(公告)日：2004-05-06

    申请号：US10602225

    申请日：2003-06-23

    Applicant: Applied Materials, Inc.

    Inventor： Ratson Morad ,  Ho Seon Shin

    IPC: H01L021/461

    CPC classification number: H01L21/67167 ,  C23C16/0227 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/67207

    Abstract: Provided herein is a system architecture of semiconductor manufacturing equipment, wherein degas chamber(s) are integrated to the conventional pass-through chamber location. Also provided herein is a system/method for depositing Cu barrier and seed layers on a semiconductor wafer. This system comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.

    Abstract translation: 本文提供了一种半导体制造设备的系统架构，其中脱气室与常规的通过腔室位置集成。 本文还提供了用于在半导体晶片上沉积Cu势垒和种子层的系统/方法。 该系统包括前开口统一吊舱，单个晶片负载锁定室，脱气室，预净化室，Ta或TaN处理室，以及Cu处理室 （s）。 脱气室集成到通气室。 这样的系统可以实现高于每小时100个晶片的系统吞吐量。

    Method and apparatus for substrate polishing
    3.
    发明申请
    Method and apparatus for substrate polishing 失效
    用于基板抛光的方法和装置

    公开(公告)号：US20030173230A1

    公开(公告)日：2003-09-18

    申请号：US10098796

    申请日：2002-03-13

    Applicant: Applied Materials, Inc.

    Inventor： Ralph Wadensweiler ,  Alain Duboust ,  Liang-Yuh Chen ,  Manoocher Birang ,  Ratson Morad ,  Paul D. Butterfield

    IPC: C25F003/00 ,  C25F007/00

    CPC classification number: B23H5/08 ,  C25F7/00

    Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a conductive polishing pad and an electrode having a membrane disposed therebetween. The membrane is orientated relative the conductive pad in a manner that facilitates removal of entrained gas from electrolyte flowing towards the conductive pad. The apparatus may be part of an electrochemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.

    Abstract translation: 提供了一种用于抛光衬底表面的方法和装置。 一方面，用于抛光衬底的装置包括导电抛光垫和在其间设置有膜的电极。 膜以相对于导电垫的方向定向，以便于从电解液中流出的夹带气体去除导电垫。 该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

    METHOD AND APPARATUS FOR ELECTRO-CHEMICAL PROCESSING
    4.
    发明申请
    METHOD AND APPARATUS FOR ELECTRO-CHEMICAL PROCESSING 失效
    电化学处理方法与装置

    公开(公告)号：US20040003894A1

    公开(公告)日：2004-01-08

    申请号：US09739139

    申请日：2000-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC: C23F001/00

    CPC classification number: C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    Abstract translation: 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Method for dishing reduction and feature passivation in polishing processes
    6.
    发明申请
    Method for dishing reduction and feature passivation in polishing processes 失效
    抛光过程中凹陷减少和特征钝化的方法

    公开(公告)号：US20030040188A1

    公开(公告)日：2003-02-27

    申请号：US09939323

    申请日：2001-08-24

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

    IPC: H01L021/311

    CPC classification number: H01L21/7684 ,  H01L21/3212

    Abstract: Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

    Abstract translation: 提供了用于平坦化基板表面的方法和装置。 在一个方面，提供了一种用于平坦化衬底表面的方法，包括将第一导电材料抛光到阻挡层材料，通过电化学沉积技术在第一导电材料上沉积第二导电材料，以及抛光第二导电材料和屏障 层材料到介电层。 在另一方面，提供一种用于在衬底上形成平坦化层的处理系统，所述处理系统包括基于计算机的控制器，所述计算机控制器被配置为使所述系统将第一导电材料抛光至阻挡层材料，将第二导电材料沉积在所述第二导电材料上 通过电化学沉积技术的第一导电材料，并将第二导电材料和阻挡层材料抛光到介电层。

    Integrated multi-step gap fill and all feature planarization for conductive materials
    7.
    发明申请
    Integrated multi-step gap fill and all feature planarization for conductive materials 失效
    集成的多步间隙填充和导电材料的所有特征平面化

    公开(公告)号：US20040266085A1

    公开(公告)日：2004-12-30

    申请号：US10792069

    申请日：2004-03-03

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC: H01L021/76

    CPC classification number: C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    Abstract translation: 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Method and apparatus for heating and cooling substrates
    8.
    发明申请
    Method and apparatus for heating and cooling substrates 失效
    用于加热和冷却基材的方法和装置

    公开(公告)号：US20040154185A1

    公开(公告)日：2004-08-12

    申请号：US10701387

    申请日：2003-11-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Ratson Morad ,  Ho Seon Shin ,  Robin Cheung ,  Igor Kogan

    IPC: B05D003/02 ,  F26B005/04

    CPC classification number: H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

    Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.

    Abstract translation: 提供了一种用于加热和冷却衬底的方法和装置。 提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板 靠近加热机构的位置和靠近冷却机构的位置。

    Barrier removal at low polish pressure
    10.
    发明申请
    Barrier removal at low polish pressure 失效
    在低抛光压力下去除屏障

    公开(公告)号：US20030013387A1

    公开(公告)日：2003-01-16

    申请号：US10187857

    申请日：2002-06-27

    Applicant: Applied Materials, Inc.

    Inventor： Stan Tsai ,  Rashid Mavliev ,  Lizhong Sun ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Ratson Morad

    IPC: B24B001/00 ,  B24B007/19

    CPC classification number: B24B37/0056 ,  B24B37/044 ,  B24B49/006 ,  B24B49/16 ,  C09G1/02 ,  H01L21/3212

    Abstract: The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

    Abstract translation: 本发明通常提供了用于平坦化具有下层电介质材料的衬底表面的方法和组合物。 本发明的方面提供使用低抛光压力，抛光组合物，各种抛光速度，选择性抛光垫和选择性抛光温度的组合的组合物和方法，用于通过化学机械抛光技术去除阻挡材料，具有最小的残留和最小的接缝损伤。 通过采用包括在低抛光压力下的顺序CMP以去除沉积的阻挡材料的战略性多步法来实现本发明的方面。

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