公开(公告)号：US20140187046A1

公开(公告)日：2014-07-03

申请号：US14142248

申请日：2013-12-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  APPLIED MATERIALS, Inc. ,  CNRS Centre National de la Recherche Scientifique

Inventor： Nicolas POSSEME ,  Thibaut DAVID ,  Olivier JOUBERT ,  Torsten LILL ,  Srinivas NEMANI ,  Laurent VALLIER

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0217 ,  H01L21/02321 ,  H01L21/02532 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L29/66628 ,  H01L29/66772

Abstract: The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitride

Abstract translation: 本发明涉及一种用于形成场效应晶体管的栅极的间隔物的方法，栅极位于半导体材料层之上，包括形成覆盖晶体管栅极的氮化物层的步骤，该方法的特征在于它 包括：在形成氮化物层的步骤之后，通过在氮化层中注入轻离子来修饰氮化物层以形成氮化物层的至少一个步骤，修饰步骤如下进行： 在栅极的侧面不改变其整个厚度的氮化物层，通过使用包含轻离子的等离子体进行注入来修饰氮化物层的步骤; 至少一个步骤，通过相对于所述半导体材料选择性地蚀刻所述改性氮化物层并相对于所述非修饰氮化物层，去除所述修饰的氮化物层