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公开(公告)号：US10901900B2
公开(公告)日：2021-01-26
申请号：US14394982
申请日：2013-04-12
IPC分类号： G06F12/08 , G06F12/0817 , G06F12/0813
摘要： A cache coherence management system includes: a set of directories distributed between nodes of a network for interconnecting processors including cache memories, each directory including a correspondence table between cache lines and information fields on the cache lines; and a mechanism updating the directories by adding, modifying, or deleting cache lines in the correspondence tables. In each correspondence table and for each cache line identified, at least one field is provided for indicating a possible blocking of a transaction relative to the cache line considered, when the blocking occurs in the node associated with the correspondence table considered. The system further includes a mechanism detecting fields indicating a transaction blocking and restarting each transaction detected as blocked from the node in which it is indicated as blocked.
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公开(公告)号：US10144586B2
公开(公告)日：2018-12-04
申请号：US14583967
申请日：2014-12-29
摘要： The invention relates to a receptacle for storage of an object, containing a proximity sensor capable of detecting an action by a user close to or in contact with a surface of the receptacle, a transducer and a control circuit comprising an input coupled to the proximity sensor and an output connected to the transducer, the control circuit being configured to generate a control signal to be sent to the transducer when a user action is detected by the proximity sensor, characterized in that it also comprises an unpacking detector coupled to the control circuit and in that the control circuit is also configured to changeover from a standby mode during which it periodically awakens to query the unpacking detector, to a detection mode during which it periodically checks the state of its input coupled to the proximity sensor, after the unpacking detector has detected removal of the receptacle from a packaging.
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公开(公告)号：US10002664B2
公开(公告)日：2018-06-19
申请号：US14489789
申请日：2014-09-18
发明人： Elisa Vianello , Gabriel Molas , Giorgio Palma , Olivier Thomas
CPC分类号： G11C13/0069 , G11C13/0011 , G11C2013/0073 , G11C2013/0083 , G11C2213/32 , G11C2213/51 , G11C2213/54 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/142
摘要： The invention more particularly relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, with said resistive memory cell being able to be electrically modified so as to switch from a first resistive state to a second resistive state (state LRS) wherein the resistance (RON) of the memory cell is at least ten times smaller than the resistance (ROFF) of the memory cell in the HRS state, in the LRS state the first electrode being so arranged as to supply metal ions intended to form at least a conductive filament through said commutation layer, with the cell being characterized in that, in the LRS state, the memory cell is conductive for a range of voltages between 0 Volts and VREST 2 .
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公开(公告)号：US09955504B2
公开(公告)日：2018-04-24
申请号：US14318838
申请日：2014-06-30
发明人： Jean-Baptiste Dore , Baher Mawlawi
CPC分类号： H04W74/0816 , H04L5/0007 , H04L5/0053 , H04L12/40143 , H04L12/413 , H04L27/2601
摘要： A method for multiple access to a frequency band of a communication channel of a communication network with carrier sense and collision avoidance, the said frequency band being divided into a set of sub-bands includes, at a source node, detecting the availability of the communication channel and transmitting to a destination node a request message for authorization to send data on the communication channel sent over one or more sub-bands, and, at the destination node, detecting simultaneous request messages for authorization to send data on the communication channel transmitted by a plurality of source nodes over a plurality of sub-bands. A message is transmitted authorizing the sending of data on the communication channel by at least one source node among the said plurality of source nodes.
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公开(公告)号：US09903842B2
公开(公告)日：2018-02-27
申请号：US14414263
申请日：2013-07-12
IPC分类号： G01N29/44 , G01S15/89 , G01N29/06 , G01N29/26 , G01N29/46 , G01N29/24 , G01S7/52 , G01S15/00
CPC分类号： G01N29/44 , G01N29/069 , G01N29/24 , G01N29/262 , G01N29/4472 , G01N29/46 , G01N2291/0289 , G01N2291/106 , G01S7/52046 , G01S7/52077 , G01S15/006 , G01S15/8927 , G01S15/8977
摘要： A method for processing ultrasonic signals includes: controlling a plurality of emission transducers for L successive emissions of ultrasonic waves; controlling N reception transducers to simultaneously receive and for a predetermined time, for each successive emission, N measurement signals; obtaining an array of ultrasonic time signals of size L×N, each coefficient Ki,j(t) of this array representing the measurement signal received by the j-th reception transducer due to the i-th emission; and denoising the time signal array by removing some of the singular values and associated singular vectors obtained from a singular value decomposition of a frequency signal array obtained by transforming this time signal array, and by reconstructing a denoised time signal array based on unremoved singular values and singular vectors.
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公开(公告)号：US09846224B2
公开(公告)日：2017-12-19
申请号：US14332821
申请日：2014-07-16
CPC分类号： G01S7/52017 , G01N29/0672 , G01N29/069 , G01N29/07 , G01N29/262 , G01S7/52046 , G10K11/346
摘要： The invention relates to an ultrasound imaging method for imaging a part (1), characterized by the implementation of the following steps: selecting a first sub-region ({tilde over (Z)}) of the part from a first image (IA(Z)) of a region (Z) of the part (1), determining, for each point of the first selected sub-region ({tilde over (Z)}), the times of flight (TijA({tilde over (Z)})) corresponding to the paths according to a first reconstruction mode (A) going through the point from a transmitter i to a receiver j for a set of M*N transmitter-receiver couples of an ultrasound signal; determining a second sub-region of the part, a point (P) of the region belonging to the second sub-region when a time of flight (TijB(P)) of the path according to a second reconstruction mode (B) going through the point (P) from a transmitter i to a receiver j of said set of M*N transmitter-receiver couples coincides with a time of flight (TA({tilde over (Z)})) of a path according to the first reconstruction mode from a transmitter to a receiver from the transmitter i to the receiver j going through one of the points of the first selected sub-region.
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公开(公告)号：US09761607B2
公开(公告)日：2017-09-12
申请号：US14579069
申请日：2014-12-22
发明人： Shay Reboh , Perrine Batude , Sylvain Maitrejean , Frederic Mazen
IPC分类号： H01L21/00 , H01L29/66 , H01L27/12 , H01L21/02 , H01L21/306 , H01L29/04 , H01L29/78 , H01L21/84 , H01L21/762 , H01L27/092 , H01L21/265 , H01L21/8238
CPC分类号： H01L27/1203 , H01L21/02115 , H01L21/0217 , H01L21/02186 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/26506 , H01L21/30604 , H01L21/76251 , H01L21/823807 , H01L21/84 , H01L27/092 , H01L29/04 , H01L29/7843 , H01L29/7847
摘要： A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.
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公开(公告)号：US09755264B2
公开(公告)日：2017-09-05
申请号：US14360356
申请日：2012-11-23
IPC分类号： H01M10/04 , H01M10/0525 , H01M10/0562 , H01M10/0585 , H01M4/38 , H01M4/48 , H01M4/505 , H01M4/525
CPC分类号： H01M10/04 , H01M4/382 , H01M4/483 , H01M4/505 , H01M4/525 , H01M10/0525 , H01M10/0562 , H01M10/0585 , Y10T29/49115
摘要： A method for the production of a battery includes at least production, against a substrate made of a material able to form an electrode, of at least one solid electrolyte layer, production of a first electrode in contact with the electrolyte, and thinning the substrate such that at least a remaining proportion of the substrate, in contact with the solid electrolyte layer, forms a second electrode.
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公开(公告)号：US09746384B2
公开(公告)日：2017-08-29
申请号：US14029920
申请日：2013-09-18
摘要： A heat flux sensor comprising at least one support, where at least one membrane is suspended relative to the support by at least four nanowires, where the membrane is made from at least one current-conducting material, and where the nanowires are made from a current-conducting material, with two nanowires connected to a current source to polarize the membrane between two terminals and a heater for heating the membrane, and where two nanowires are connected to a voltmeter to form measure the voltage at the terminals of the membrane.
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公开(公告)号：US09673350B2
公开(公告)日：2017-06-06
申请号：US14420814
申请日：2013-08-12
发明人： Francois Boulard , Olivier Gravrand
IPC分类号： H01L33/00 , H01L23/00 , H01L33/46 , H01L33/62 , H01L27/146
CPC分类号： H01L33/0083 , H01L24/10 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/1465 , H01L27/14689 , H01L33/46 , H01L33/62 , H01L2924/01049 , H01L2924/12043 , H01L2924/00
摘要： A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.
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