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公开(公告)号：US07518110B2
公开(公告)日：2009-04-14
申请号：US11359374
申请日：2006-02-23
IPC分类号： G01B9/00
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
摘要翻译： 提供了一种图案测量方法和装置，其基于通过扫描电子显微镜等测量的测量点的基准位置，基于从扫描电子显微镜获取的图像上的参考图案的位置信息，并基于 通过使用设计数据检测的位置关系，在测量点和形成在与测量点隔离的位置处形成的参考图案之间。
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公开(公告)号：US20080224035A1
公开(公告)日：2008-09-18
申请号：US11892675
申请日：2007-08-24
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/10056 , G06T2207/30148
摘要： An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要翻译： 提供了一种评估方法和装置，用于通过使用表示叠加的多个图案的设计数据来理想地评估图案图案的图案之间的位移。 对于设计数据的线段和带电粒子辐射图像的边缘之间的上层图案测量第一距离，测量设计数据的线段与设计数据的边缘之间的较低层图案的第二距离 带电粒子辐射图像; 并且根据第一距离和第二距离在上层图案和下层图案之间检测叠加位移。
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公开(公告)号：US20080016481A1
公开(公告)日：2008-01-17
申请号：US11812774
申请日：2007-06-21
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G01R31/303
摘要： A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer 412 for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor 413 for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer 412, an inspection recipe creator 416 for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor 413, and an SEM defect review apparatus 300 for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator 416.
摘要翻译： 提供一种用于检测缺陷的系统和方法，其能够提取根据电路操作所需的精加工精度而发生的缺陷。 与基于电路设计数据的其他部分相比，该系统包括用于提取与信号传输操作相比需要高精度的关键路径的定时分析器412，用于将电路设计数据与布局设计数据进行比较的关键路径提取器413 基于模式并且用于提取包括由定时分析器412提取的关键路径的图形数据的检查配方创建器416，用于基于关于关键路径提取器提取的关键路径的图形数据的坐标信息来确定被检查部分 413，以及SEM检查装置300，用于根据由检查配方生成器416生成的检查配方，在晶片上获取被判定部位的图像。
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公开(公告)号：US08173962B2
公开(公告)日：2012-05-08
申请号：US12708148
申请日：2010-02-18
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/10056 , G06T2207/30148
摘要： An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要翻译： 提供了一种评估方法和装置，用于通过使用表示叠加的多个图案的设计数据来理想地评估图案图案的图案之间的位移。 对于设计数据的线段和带电粒子辐射图像的边缘之间的上层图案测量第一距离，测量设计数据的线段与设计数据的边缘之间的较低层图案的第二距离 带电粒子辐射图像; 并且根据第一距离和第二距离在上层图案和下层图案之间检测叠加位移。
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公开(公告)号：US20060193508A1
公开(公告)日：2006-08-31
申请号：US11359374
申请日：2006-02-23
IPC分类号： G06K9/00
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
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16.发明授权System and method for detecting defects in a semiconductor during manufacturing thereof 有权用于在其制造期间检测半导体中的缺陷的系统和方法公开(公告)号：US07681159B2
公开(公告)日：2010-03-16
申请号：US11812774
申请日：2007-06-21
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G01R31/303
摘要： A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.
摘要翻译： 提供一种用于检测缺陷的系统和方法，其能够提取根据电路操作所需的精加工精度而发生的缺陷。 该系统包括用于提取与其他部分相比基于电路设计数据而与信号传输操作相比需要高精度的关键路径的定时分析器，用于将电路设计数据与布局设计数据进行比较的关键路径提取器 基于关于包括由关键路径提取器提取的关键路径的图形数据的坐标信息，以及扫描电子显微镜（SEM）来提取包括由定时分析器提取的关键路径的图形数据，用于决定待检查部分的检查配方生成器 缺陷检查装置，用于根据由检查配方创建者创建的检查配方在晶片上获取所确定的待检查部分的图像。
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17.发明授权Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权尺寸测量SEM系统，电路图案形状评估方法和执行该方法的系统公开(公告)号：US07449689B2
公开(公告)日：2008-11-11
申请号：US11260082
申请日：2005-10-28
申请人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
发明人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
CPC分类号： H01J37/28 , G03F1/36 , G03F1/68 , G03F7/70625 , H01J37/222 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817
摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.
摘要翻译： 本发明涉及一种尺寸测量SEM系统和电路图案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性 评估方法。 将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微小评估，以及表示一维或二维几何特征 计算设计图案和抗蚀剂图案之间的差异。 在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。 为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像 抗蚀图案
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公开(公告)号：US08507856B2
公开(公告)日：2013-08-13
申请号：US13457359
申请日：2012-04-26
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
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19.发明授权Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus 有权样品尺寸检测/测量方法和样品尺寸检测/测量仪器公开(公告)号：US08338804B2
公开(公告)日：2012-12-25
申请号：US13041894
申请日：2011-03-07
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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20.发明授权Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus 有权样品尺寸检测/测量方法和样品尺寸检测/测量仪器公开(公告)号：US07923703B2
公开(公告)日：2011-04-12
申请号：US12279564
申请日：2007-02-09
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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