公开(公告)号：US20240310167A1

公开(公告)日：2024-09-19

申请号：US18593000

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Kazuki HAGIHARA

IPC: G01B15/04 ,  G06T7/00 ,  G06T7/543 ,  H10B80/00

CPC classification number: G01B15/04 ,  G06T7/001 ,  G06T7/543 ,  H10B80/00 ,  G06T2207/30148

Abstract: A pattern shape measurement method includes acquiring image data of a target pattern obtained by irradiating an observation region of a sample with a charged particle or an electromagnetic wave, generating first contour point group data in which location information of a contour point of the target pattern extracted based on the image data and an index related to an orientation angle of a line connecting a center of the target pattern and the contour point from a reference line passing through the center of the target pattern are associated with each other, and generating, based on a weighting table in which the index and weight determined based on a standard deviation of location information of the contour point of the target pattern present in a direction of the orientation angle are associated with each other and stored, and the first contour point group data, second contour point group data according to the weight.

公开(公告)号：US12055386B2

公开(公告)日：2024-08-06

申请号：US17627456

申请日：2020-06-20

Applicant: Sikora AG

Inventor： Armin Holle ,  Christian Frank

IPC: G01N21/3581 ,  G01B15/02 ,  G01B15/04

CPC classification number: G01B15/02 ,  G01B15/04 ,  G01N21/3581

Abstract: A device for measuring a strand that is tubular includes a first radiation source to emit terahertz radiation in a first measurement region from an inside onto an inner surface of the strand. A first radiation receiver receives terahertz radiation reflected by the strand in a second measurement region. A first evaluation apparatus determines at least one geometric parameter of the strand in the first measurement region. A second radiation source emits terahertz radiation in the second measurement region from an outside onto an outer surface of the strand. A second radiation receiver receives terahertz radiation reflected by the strand in the second measurement region. A second evaluation apparatus determines at least one geometric parameter of the strand in the second measurement region. A third evaluation apparatus determines a change in the at least one geometric parameter of the strand between the first and second measurement regions.

公开(公告)号：US20240102950A1

公开(公告)日：2024-03-28

申请号：US18374289

申请日：2023-09-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Ting LIU ,  Po-Ching HE ,  Wei-En FU ,  Chun-Yu LIU

IPC: G01N23/201 ,  G01B15/04 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01B15/04 ,  G01N23/2273 ,  H01L22/12 ,  G01N2223/052 ,  G01N2223/1016

Abstract: A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

公开(公告)号：US11713964B1

公开(公告)日：2023-08-01

申请号：US17574055

申请日：2022-01-12

Applicant: Applied Materials Israel Ltd.

Inventor： David Goldovsky ,  Ido Almog ,  Ronny Barnea

IPC: G01B15/04 ,  H01J37/285 ,  H01J37/244 ,  H01J37/28

CPC classification number: G01B15/04 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285

Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

公开(公告)号：US20230221112A1

公开(公告)日：2023-07-13

申请号：US17574055

申请日：2022-01-12

Applicant: Applied Materials Israel Ltd.

Inventor： David Goldovsky ,  Ido Almog ,  Ronny Barnea

IPC: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

CPC classification number: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

公开(公告)号：US20230215687A1

公开(公告)日：2023-07-06

申请号：US18090100

申请日：2022-12-28

Applicant: FEI Company

Inventor： Andreas Voigt ,  Trond Varslot ,  Magda Zaoralová

IPC: H01J37/26 ,  G01B15/04 ,  G06T7/73

CPC classification number: H01J37/261 ,  G01B15/04 ,  G06T7/75 ,  G06T2207/10056 ,  G06T2207/10072

Abstract: The present invention relates to a method for acquiring tomographic images of a sample in a microscopy system, wherein the sample comprises a defined region, and wherein the method comprises determining a location in three-dimensional space of the defined region, wherein the method further comprises capturing an image of at least a part of the sample, and wherein the determination of the location in three-dimensional space of the defined region is based, at least in part, on the image of the part of the sample. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.

公开(公告)号：US10002743B2

公开(公告)日：2018-06-19

申请号：US15305740

申请日：2015-04-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shoji Hotta ,  Hiroki Kawada ,  Osamu Inoue

IPC: H01J37/28 ,  G03F9/00 ,  G01B15/04 ,  H01J37/22 ,  G03F7/20

CPC classification number: H01J37/28 ,  G01B15/04 ,  G03F7/70633 ,  G03F9/7061 ,  H01J37/22 ,  H01J2237/2803

Abstract: For scanning electron beams and measuring overlay misalignment between an upper layer pattern and a lower layer pattern with high precision, electron beams are scanned over a region including a first pattern and a second pattern of a sample, the sample having the lower layer pattern (the first pattern) and the upper layer pattern (the second pattern) formed in a step after a step of forming the first pattern. The electron beams are scanned such that scan directions and scan sequences of the electron beams become axial symmetrical or point-symmetrical in a plurality of pattern position measurement regions defined within the scan region for the electron beams, thereby reducing measurement errors resulting from the asymmetry of electric charge.

公开(公告)号：US09983154B2

公开(公告)日：2018-05-29

申请号：US15349363

申请日：2016-11-11

Applicant: IMEC VZW

Inventor： Sandip Halder ,  Philippe Leray

IPC: G01B15/04 ,  G01N23/22 ,  G01N23/225

CPC classification number: G01N23/2251 ,  G01B15/04 ,  G01N2223/6116 ,  G01N2223/646 ,  G03F7/70616 ,  G03F7/7065

Abstract: The present disclosure is related to a method for detection of defects in a printed pattern of geometrical features on a semiconductor die, the pattern comprising an array of features having a nominal pitch, the method comprising determining deviations from the nominal pitch in the printed pattern, and comparing the printed pattern with another version of the pattern, the other version having the same or similar pitch deviations as the printed pattern. According to various embodiments, the other version of the pattern may a printed pattern on a second die, or it may be a reference pattern, obtained by shifting features of the array in a version having no or minimal pitch deviations, so that the pitch deviations in the reference pattern are the same or similar to the pitch deviations in the printed pattern under inspection.

公开(公告)号：US09841387B2

公开(公告)日：2017-12-12

申请号：US14986718

申请日：2016-01-03

Applicant: Test Research, Inc.

Inventor： Liang-Pin Yu ,  Chia-Ho Yen ,  Hao-Kai Chou ,  Chun-Ti Chen ,  Meng-Kun Lee

IPC: G06K9/00 ,  G01N23/04 ,  G01B15/04

CPC classification number: G01N23/04 ,  G01B15/04 ,  G01B2210/56 ,  G06K9/00

Abstract: An inspection method is provided herein. The inspection method is adapted for an inspection device. The inspection method includes: optically scanning an examining target for generating a scanned image; reconstructing the scanned image for a reconstructed volume; adjusting a slicing direction associated with the examining target for slicing the reconstructed volume into a sliced image; inspecting the sliced image for analyzing one or more features of the examining target; and outputting an inspection result of the examining target.

公开(公告)号：US20170138725A1

公开(公告)日：2017-05-18

申请号：US15322338

申请日：2015-05-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroki Kawada ,  Hideo Sakai ,  Katsuhiro Sasada

IPC: G01B15/00 ,  H01J37/22 ,  H01J37/28

CPC classification number: G01B15/00 ,  G01B15/04 ,  H01J37/222 ,  H01J37/28 ,  H01J37/317 ,  H01J2237/2817 ,  H01L22/12

Abstract: The presently disclosed subject matter provides a pattern measurement method and device for achieving highly accurate measurement in the depth direction of a pattern. The method involves a focused ion beam irradiated to form an inclined surface in a sample area; a field of view of a SEM set to include the boundary between the inclined surface and a sample surface; and an image of the field of view obtained on the basis of a detection signal. Such an acquired image is used to specify a first position, the boundary between inclined surface and non-inclined surface, and a second position, the position of a desired deep hole or deep groove positioned within the inclined surface. The pattern dimension in a height direction is determined on the basis of the distance in the sample surface direction between the first position and second position and the angle of the inclined surface.