公开(公告)号：US07449689B2

公开(公告)日：2008-11-11

申请号：US11260082

申请日：2005-10-28

申请人： Wataru Nagatomo ,  Ryoichi Matsuoka ,  Takumichi Sutani ,  Akiyuki Sugiyama ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa

发明人： Wataru Nagatomo ,  Ryoichi Matsuoka ,  Takumichi Sutani ,  Akiyuki Sugiyama ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa

IPC分类号： G03F1/00 ,  G21K7/00

CPC分类号： H01J37/28 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70625 ,  H01J37/222 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817

摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.

摘要翻译： 本发明涉及一种尺寸测量SEM系统和电路图​​案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性 评估方法。 将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微小评估，以及表示一维或二维几何特征 计算设计图案和抗蚀剂图案之间的差异。 在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。 为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像 抗蚀图案

公开(公告)号：US20060108524A1

公开(公告)日：2006-05-25

申请号：US11260082

申请日：2005-10-28

申请人： Wataru Nagatomo ,  Ryoichi Matsuoka ,  Takumichi Sutani ,  Akiyuki Sugiyama ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa

发明人： Wataru Nagatomo ,  Ryoichi Matsuoka ,  Takumichi Sutani ,  Akiyuki Sugiyama ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa

IPC分类号： G21K7/00

CPC分类号： H01J37/28 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70625 ,  H01J37/222 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817

摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.

摘要翻译： 本发明涉及一种尺寸测量SEM系统和电路图​​案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性 评估方法。 将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微分评估，以及表示一维或二维几何特征 计算设计图案和抗蚀剂图案之间的差异。 在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。 为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像 抗蚀图案

公开(公告)号：US07816062B2

公开(公告)日：2010-10-19

申请号：US11592175

申请日：2006-11-03

申请人： Wataru Nagatomo ,  Hidetoshi Morokuma ,  Atsushi Miyamoto ,  Hideaki Sasazawa

发明人： Wataru Nagatomo ,  Hidetoshi Morokuma ,  Atsushi Miyamoto ,  Hideaki Sasazawa

IPC分类号： G03F9/00 ,  G03C5/00 ,  G21G5/00

CPC分类号： H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

摘要翻译： 在曝光处理或蚀刻处理中，从SEM图像计算出用于估计目标评价图案的截面形状，图案的处理条件或图案的装置特性的图像特征量。 将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状，图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联 图片。 由此，非破坏性地计算目标评价图案的截面形状，图案的处理条件或图案的装置特性。

公开(公告)号：US20070105243A1

公开(公告)日：2007-05-10

申请号：US11592175

申请日：2006-11-03

申请人： Wataru Nagatomo ,  Hidetoshi Morokuma ,  Atsushi Miyamoto ,  Hideaki Sasazawa

发明人： Wataru Nagatomo ,  Hidetoshi Morokuma ,  Atsushi Miyamoto ,  Hideaki Sasazawa

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

摘要翻译： 在曝光处理或蚀刻处理中，从SEM图像计算出用于估计目标评价图案的截面形状，图案的处理条件或图案的装置特性的图像特征量。 将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状，图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联 图片。 由此，非破坏性地计算目标评价图案的截面形状，图案的处理条件或图案的装置特性。

公开(公告)号：US07273685B2

公开(公告)日：2007-09-25

申请号：US11304778

申请日：2005-12-16

申请人： Hideaki Sasazawa ,  Yasuhiro Yoshitake

发明人： Hideaki Sasazawa ,  Yasuhiro Yoshitake

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70641

摘要： In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.

摘要翻译： 为了在半导体器件的生产过程中实现通过光刻的曝光量和曝光量等的曝光条件的单独和容易的优化，本发明使得：将光照射到半导体晶片上的图案上; 通过利用其反射检测使用散射光的图案形状的信息的光学系统，检测并存储具有预先准备的多个形状变形图案的FEM样品晶片的波形; 记录与图案变化相关联地生成的光谱波形上的一个或多个特征点; 并获得特征点的变化模型。 对于要测量的图案，以与上述相同的方式检测光谱波形，并且使用波形的波形上的特征点的位移来估计形成条件的偏差（曝光剂量偏差和聚焦偏差） 变异模型。 因此，可以独立地反馈曝光剂量和聚焦，并且可以以高精度实现过程控制。

公开(公告)号：US20100182589A1

公开(公告)日：2010-07-22

申请号：US12626963

申请日：2009-11-30

申请人： Takenori HIROSE ,  Minoru Yoshida ,  Hideaki Sasazawa ,  Yasuhiro Yoshitake

发明人： Takenori HIROSE ,  Minoru Yoshida ,  Hideaki Sasazawa ,  Yasuhiro Yoshitake

IPC分类号： G01J3/08 ,  G01J3/00

CPC分类号： G01J3/02 ,  G01B2210/56 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/0229 ,  G01N21/95607

摘要： In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.

摘要翻译： 在用于检测在测试对象的表面上均匀形成的重复图案结构的形状的光谱检测中，有利的是在短波长范围内使用宽波长范围的光。 然而，实现能够在短波长区域即紫外线区域中具有宽波长范围的光的光谱检测的相对简单的光学系统是不容易的。 本发明提供一种用于检测图案缺陷的检查装置。 检查装置包括能够对从深紫外线到近红外线的波长范围内的光进行光谱检测的光谱检测光学系统。 光谱检测光学系统包括用作半反射镜的空间部分反射镜和设置有孔径光阑的反射物镜，该孔径光阑用于限制被施加到测试对象并由被测物体反射的光的角度和方向。

公开(公告)号：US20060183040A1

公开(公告)日：2006-08-17

申请号：US11304778

申请日：2005-12-16

申请人： Hideaki Sasazawa ,  Yasuhiro Yoshitake

发明人： Hideaki Sasazawa ,  Yasuhiro Yoshitake

IPC分类号： G03C5/00

CPC分类号： G03F7/70641

摘要： In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.

摘要翻译： 为了在半导体器件的生产过程中实现通过光刻的曝光量和曝光量等的曝光条件的单独和容易的优化，本发明使得：将光照射到半导体晶片上的图案上; 通过利用其反射检测使用散射光的图案形状的信息的光学系统，检测并存储具有预先准备的多个形状变形图案的FEM样品晶片的波形; 记录与图案变化相关联地生成的光谱波形上的一个或多个特征点; 并获得特征点的变化模型。 对于要测量的图案，以与上述相同的方式检测光谱波形，并且使用波形的波形上的特征点的位移来估计形成条件的偏差（曝光剂量偏差和聚焦偏差） 变异模型。 因此，可以独立地反馈曝光剂量和聚焦，并且可以以高精度实现过程控制。

公开(公告)号：US08279431B2

公开(公告)日：2012-10-02

申请号：US12626963

申请日：2009-11-30

申请人： Takenori Hirose ,  Minoru Yoshida ,  Hideaki Sasazawa ,  Yasuhiro Yoshitake

发明人： Takenori Hirose ,  Minoru Yoshida ,  Hideaki Sasazawa ,  Yasuhiro Yoshitake

IPC分类号： G01N21/00

CPC分类号： G01J3/02 ,  G01B2210/56 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/0229 ,  G01N21/95607

摘要： In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.

摘要翻译： 在用于检测在测试对象的表面上均匀形成的重复图案结构的形状的光谱检测中，有利的是在短波长范围内使用宽波长范围的光。 然而，实现能够在短波长区域即紫外线区域中具有宽波长范围的光的光谱检测的相对简单的光学系统是不容易的。 本发明提供一种用于检测图案缺陷的检查装置。 检查装置包括能够对从深紫外线到近红外线的波长范围内的光进行光谱检测的光谱检测光学系统。 光谱检测光学系统包括用作半反射镜的空间部分反射镜和设置有孔径光阑的反射物镜，该孔径光阑用于限制被施加到测试对象并由被测物体反射的光的角度和方向。

公开(公告)号：US08736830B2

公开(公告)日：2014-05-27

申请号：US13145968

申请日：2009-12-10

申请人： Masahiro Watanabe ,  Toshihiko Nakata ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa ,  Minoru Yoshida

发明人： Masahiro Watanabe ,  Toshihiko Nakata ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa ,  Minoru Yoshida

IPC分类号： G01N21/00

CPC分类号： G01Q60/22 ,  G01N21/95607 ,  G11B5/84

摘要： There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.

摘要翻译： 提供了一种用于基板表面的图案检查装置，其能够高速检查尺寸等于或小于光分辨率极限的图案的基板。 用于基板表面的图案检查装置包括：具有精细重复图案的近场光学头101; a＆thetas; 驱动单元311，其相对于近场光学头101扫描被检查的基板900; 在近场光学头101和被检查基板900之间保持一定间隔的空间保持机构; 将光照射到近场光学头101的光源110; 检测系统201，用于检测由近场光学头101上的细重复图案与被检查基板900的表面上的微细图案之间的相互作用产生的散射光的强度; 以及基于检测系统201的输出来检查被检查基板900上的精细图案的信号处理单元321。

公开(公告)号：US20120013890A1

公开(公告)日：2012-01-19

申请号：US13145968

申请日：2009-12-10

申请人： Masahiro Watanabe ,  Toshihiko Nakata ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa ,  Minoru Yoshida

发明人： Masahiro Watanabe ,  Toshihiko Nakata ,  Yasuhiro Yoshitake ,  Hideaki Sasazawa ,  Minoru Yoshida

IPC分类号： G01N21/956 ,  G01N21/47

CPC分类号： G01Q60/22 ,  G01N21/95607 ,  G11B5/84

摘要： There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.

摘要翻译： 提供了一种用于基板表面的图案检查装置，其能够高速检查尺寸等于或小于光分辨率极限的图案的基板。 用于基板表面的图案检查装置包括：具有精细重复图案的近场光学头101; a＆thetas; 驱动单元311，其相对于近场光学头101扫描被检查的基板900; 在近场光学头101和被检查基板900之间保持一定间隔的空间保持机构; 将光照射到近场光学头101的光源110; 检测系统201，用于检测由近场光学头101上的细重复图案与被检查基板900的表面上的微细图案之间的相互作用产生的散射光的强度; 以及基于检测系统201的输出来检查被检查基板900上的精细图案的信号处理单元321。