公开(公告)号：US20110260235A1

公开(公告)日：2011-10-27

申请号：US12887328

申请日：2010-09-21

申请人： Takashi Whitney Orimoto ,  Atsushi Suyama ,  Ming Tian ,  Henry Chin ,  Henry Chien ,  Vinod Robert Purayath ,  Dana Lee

发明人： Takashi Whitney Orimoto ,  Atsushi Suyama ,  Ming Tian ,  Henry Chin ,  Henry Chien ,  Vinod Robert Purayath ,  Dana Lee

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L21/28291 ,  H01L21/28273 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/788

摘要： Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

摘要翻译： 公开了非电压存储和用于制造非易失性存储器的技术。 在一些实施例中，非易失性存储元件的控制栅极的至少一部分由p型多晶硅形成。 在一个实施例中，控制栅极的下部是p型多晶硅。 控制栅极的上部可以是p型多晶硅，n型多晶硅，金属，金属氮化物等。即使在高Vpgm下，控制栅中的P型多晶硅也可能不会消耗。 因此，如果控制门耗尽，可能会发生的一些问题得到缓解。 例如，具有至少部分p型多晶硅的控制栅极的存储单元可以用比由n型多晶硅形成的存储单元低的Vpgm来编程。

公开(公告)号：US08546214B2

公开(公告)日：2013-10-01

申请号：US12887328

申请日：2010-09-21

申请人： Takashi Whitney Orimoto ,  Atsushi Suyama ,  Ming Tian ,  Henry Chin ,  Henry Chien ,  Vinod Robert Purayath ,  Dana Lee

发明人： Takashi Whitney Orimoto ,  Atsushi Suyama ,  Ming Tian ,  Henry Chin ,  Henry Chien ,  Vinod Robert Purayath ,  Dana Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/28291 ,  H01L21/28273 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/788

摘要： Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

摘要翻译： 公开了非电压存储和用于制造非易失性存储器的技术。 在一些实施例中，非易失性存储元件的控制栅极的至少一部分由p型多晶硅形成。 在一个实施例中，控制栅极的下部是p型多晶硅。 控制栅极的上部可以是p型多晶硅，n型多晶硅，金属，金属氮化物等。即使在高Vpgm下，控制栅中的P型多晶硅也可能不会消耗。 因此，如果控制门耗尽，可能会发生的一些问题得到缓解。 例如，具有至少部分p型多晶硅的控制栅极的存储单元可以用比由n型多晶硅形成的存储单元低的Vpgm来编程。

公开(公告)号：US20130181518A1

公开(公告)日：2013-07-18

申请号：US13824918

申请日：2011-09-28

申请人： Atsushi Suyama ,  Yosuke Tanida

发明人： Atsushi Suyama ,  Yosuke Tanida

IPC分类号： H02J1/00

CPC分类号： H02J1/00 ,  H02J3/32 ,  H02J7/34 ,  Y10T307/344

摘要： [Problem] To provide a power supply system which effectively utilizes a power storage unit and also limits degradation of the power storage unit.[Solution] A power supply system (1) is provided with: a power storage unit (2) for charging supplied electric power and supplying the charged electric power by means of discharge; and a power storage unit controller (3) for controlling the discharging of the power storage unit (2). The power storage unit controller (3) sets a discharge period during which the power storage unit (2) can be discharged. Furthermore, during the discharge period, the power storage unit controller (3) determines the electric energy to be supplied by means of the discharging of the power storage unit (2) during the remaining discharge period on the basis of the remaining discharge period and the electric energy that can be discharged by the power storage unit (2).

摘要翻译： [问题]提供一种有效利用蓄电单元的电力供应系统，还限制蓄电单元的劣化。 电源系统（1）具备：蓄电单元（2），用于对所提供的电力进行充电，并通过放电来提供充电的电力; 以及用于控制所述蓄电单元（2）的放电的蓄电单元控制器（3）。 蓄电单元控制器（3）设定蓄电单元（2）能够放电的放电期间。 此外，在放电期间，蓄电部控制部3基于剩余放电期间，在剩余放电期间，通过蓄电部（2）的放电来决定供给的电能， 能够由蓄电部（2）放电的电能。