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11.发明申请公开(公告)号：US20210296368A1
公开(公告)日：2021-09-23
申请号：US17264827
申请日：2020-06-15
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Ning LIU , Yingbin HU , Junlin PENG , Liusong NI
IPC: H01L27/12
Abstract: Provided are a display substrate and a manufacturing method therefor, and a display panel and a display apparatus. The gate insulation layer included in the display substrate comprises a first branch portion located between the gate electrode and the active layer, and a second branch portion located below an overlapping region of the first routing and the second routing; a part, extending out of the gate electrode, of the first branch portion has a first width value; at the overlapping region between the second routing and the first routing, a part, extending out of the first routing, of the second branch portion has a second width value; and the first width value is greater than the second width value.
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12.发明申请公开(公告)号：US20210265510A1
公开(公告)日：2021-08-26
申请号：US17254851
申请日：2020-04-08
Inventor： Yingbin HU , Ce ZHAO , Yuankui DING , Wei SONG , Liusong NI , Xuechao SUN , Chaowei HAO , Liangchen YAN
IPC: H01L29/786 , H01L27/12 , H01L21/02 , H01L29/66
Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
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13.发明申请公开(公告)号：US20200161196A1
公开(公告)日：2020-05-21
申请号：US16452952
申请日：2019-06-26
Inventor： Yingbin HU , Ce ZHAO , Yuankui DING , Wei SONG , Jun WANG , Yang ZHANG , Wei LI , Liangchen YAN
IPC: H01L21/66 , H01L29/66 , H01L21/44 , H01L21/467 , G03F7/20
Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
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公开(公告)号：US20200067012A1
公开(公告)日：2020-02-27
申请号：US16409419
申请日：2019-05-10
Inventor： Tongshang SU , Dongfang WANG , Qinghe WANG , Ce ZHAO , Bin ZHOU , Liangchen YAN
Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.
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15.发明公开公开(公告)号：US20230363227A1
公开(公告)日：2023-11-09
申请号：US18354218
申请日：2023-07-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang WANG , Tongshang SU , Ming WANG , Ce ZHAO , Bin ZHOU
IPC: H10K59/35 , H10K59/126 , H10K59/121
CPC classification number: H10K59/351 , H10K59/126 , H10K59/1213 , H10K2102/103
Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
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Patent Agency Ranking
公开(公告)号：US20230052154A1
公开(公告)日：2023-02-16
申请号：US17785695
申请日：2021-09-13
Inventor： Ming WANG , Haitao WANG , Jun CHENG , Ce ZHAO
IPC: H01L27/32 , H01L29/786 , H01L29/66
Abstract: A display substrate, a method for manufacturing the same, and a display device are provided, belonging to the technical field of display. The display substrate includes: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate. The technical solution of the present disclosure can improve the yield of OLED display substrates.
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公开(公告)号：US20210288283A1
公开(公告)日：2021-09-16
申请号：US17260018
申请日：2020-05-27
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Ning LIU , Leilei CHENG , Junlin PENG , Yingbin HU , Liusong NI
Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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公开(公告)号：US20210167336A1
公开(公告)日：2021-06-03
申请号：US15780359
申请日：2017-11-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Bin ZHOU , Guangcai YUAN , Dongfang WANG , Ce ZHAO , Jun CHENG , Luke DING
Abstract: The present disclosure provides a heating device for heating an OLED substrate, comprising: a heating plate, a support, and a temperature controller, the temperature controller is connected with the heating plate and the support respectively, and the temperature controller is used to synchronously heat the heating plate and the support, so that the temperature of the heating plate and the support are substantially the same; wherein the heating plate comprises an receiving portion for accommodating the support, the support is configured to be able to protrude from the heating plate and retract into the heating plate.
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公开(公告)号：US20210050442A9
公开(公告)日：2021-02-18
申请号：US16430706
申请日：2019-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Luke DING , Zhanfeng CAO , Jingang FANG , Liangchen YAN , Ce ZHAO , Dongfang WANG
IPC: H01L29/786 , H01L29/66
Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
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公开(公告)号：US20210043660A1
公开(公告)日：2021-02-11
申请号：US16862865
申请日：2020-04-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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