公开(公告)号：US10804300B2

公开(公告)日：2020-10-13

申请号：US14428832

申请日：2014-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jang Soon Im

IPC: H01L27/12 ,  H01L23/00

Abstract: A complementary thin film transistor drive back-plate and manufacturing method thereof, a display panel. The method comprises: providing a lower semiconductor layer on a base substrate (101), and forming a P-type semiconductor active layer (103); providing a gate insulating layer (107) on the lower semiconductor layer; providing a lower electrode layer on the gate insulating layer (107), and forming a P-type transistor gate electrode (108), an N-type transistor source electrode (109) and an N-type transistor drain electrode (110); providing an upper semiconductor layer on the lower electrode layer, and forming a pixel electrode (111) and an N-type semiconductor active layer (112); providing an isolation insulating protective layer (113) on the upper semiconductor layer, and forming contact holes (114) and a protection unit (115); providing an upper electrode layer on the isolation insulating protective layer (113), and aiming a P-type transistor source electrode (116), a P-type transistor drain electrode (117) and an N-type transistor gate electrode (118); and providing a pixel defining layer (119) on the upper electrode layer, and forming a pixel connection opening (120).

公开(公告)号：US09349870B2

公开(公告)日：2016-05-24

申请号：US14365227

申请日：2013-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei Wang ,  Xueyan Tian ,  Jang Soon Im

IPC: H01L21/20 ,  H01L29/786 ,  H01L21/02 ,  H01L29/49 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78675 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606

Abstract: A method for forming low-temperature polysilicon thin film, a thin film transistor and a display device are provided. The method for forming low-temperature polysilicon thin film comprises: depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. The method may improve the grain size and uniformity of the low-temperature polysilicon thin film, make full use of the energy of the incident laser light, facilitate the reduction of the production cost of the low-temperature polysilicon thin film, and improve the performance of the low-temperature polysilicon thin film transistor.

Abstract translation: 提供了形成低温多晶硅薄膜，薄膜晶体管和显示装置的方法。 形成低温多晶硅薄膜的方法包括：在基底衬底上沉积非晶硅薄膜; 用抗反射光学膜覆盖非晶硅薄膜; 在抗反射光学膜上进行光刻和蚀刻，使得聚光结构以阵列形式提供在抗反射光学膜上; 并用由激光覆盖的抗反射光学膜照射非晶硅薄膜，使得非晶硅膜转变为低温多晶硅薄膜。 该方法可以提高低温多晶硅薄膜的晶粒尺寸和均匀性，充分利用入射激光的能量，有利于降低低温多晶硅薄膜的生产成本，提高性能 的低温多晶硅薄膜晶体管。

公开(公告)号：US20150179679A1

公开(公告)日：2015-06-25

申请号：US14355505

申请日：2013-12-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jang Soon Im

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/0271 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869

Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The method for manufacturing the array substrate comprises: forming a pattern of an active layer of a switching thin-film transistor (TFT) and a pattern of a corresponding pixel electrode on a base substrate, in which the active layer of the switching TFT and the pixel electrode are on the same layer.

Abstract translation: 本发明的实施例提供阵列基板，其制造方法和显示装置。 阵列基板的制造方法包括：在基板上形成开关薄膜晶体管（TFT）的有源层的图案和对应的像素电极的图案，其中开关TFT的有源层和 像素电极在同一层上。

公开(公告)号：US20150091010A1

公开(公告)日：2015-04-02

申请号：US14365227

申请日：2013-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei Wang ,  Xueyan Tian ,  Jang Soon Im

IPC: H01L29/786 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L29/78675 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606

Abstract: A method for forming low-temperature polysilicon thin film, a thin film transistor and a display device are provided. The method for forming low-temperature polysilicon thin film comprises: depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. The method may improve the grain size and uniformity of the low-temperature polysilicon thin film, make full use of the energy of the incident laser light, facilitate the reduction of the production cost of the low-temperature polysilicon thin film, and improve the performance of the low-temperature polysilicon thin film transistor.

Abstract translation: 提供了形成低温多晶硅薄膜，薄膜晶体管和显示装置的方法。 形成低温多晶硅薄膜的方法包括：在基底衬底上沉积非晶硅薄膜; 用抗反射光学膜覆盖非晶硅薄膜; 在抗反射光学膜上进行光刻和蚀刻，使得聚光结构以阵列形式提供在抗反射光学膜上; 并用由激光覆盖的抗反射光学膜照射非晶硅薄膜，使得非晶硅膜转变为低温多晶硅薄膜。 该方法可以提高低温多晶硅薄膜的晶粒尺寸和均匀性，充分利用入射激光的能量，有利于降低低温多晶硅薄膜的生产成本，提高性能 的低温多晶硅薄膜晶体管。