公开(公告)号：US20240337923A1

公开(公告)日：2024-10-10

申请号：US18746320

申请日：2024-06-18

Applicant: CANON KABUSHIKI KAISHA

Inventor： Satoshi Iwatani ,  Byung-Jin Choi ,  Makoto Mizuno

IPC: G03F7/00 ,  B29C59/02 ,  B81C99/00 ,  H01L21/027

CPC classification number: G03F7/0002 ,  B29C59/02 ,  B81C99/009 ,  H01L21/0271 ,  B29C2059/023

Abstract: A forming apparatus forming a composition on a substrate by using a mold, includes a supplier configured to supply a composition on the substrate, a plurality of processors including a first processor and a second processor, each of the plurality of processors being configured to bring the mold into contact with the composition supplied onto the substrate by the supplier, and a substrate conveyer configured to convey the substrate onto which the composition is supplied by the supplier to the first processor and then convey other substrate onto which the composition is supplied following the substrate to the second processor.

公开(公告)号：US12085851B2

公开(公告)日：2024-09-10

申请号：US17035331

申请日：2020-09-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： John D. Williamson ,  Steven C. Shackleton

IPC: G01L9/00 ,  G01L19/00 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F7/0002 ,  G01L9/0041 ,  G01L19/0007 ,  H01L21/0271

Abstract: A pressure sensor manifold is provided that resolves issues caused by accumulated particles and bubbles to improve print head performance. The pressure sensor manifold includes a fluid inlet, a fluid outlet, and a dome-shape cavity connecting with both the fluid inlet and the fluid outlet. The fluid inlet has a first interior cross-section, and the fluid outlet has a second interior cross-section. The dome-shape cavity has an apex. A line that is tangential to the apex passes through a plurality of points on both the first interior cross-section of the fluid inlet and the second interior cross-section of the fluid outlet.

公开(公告)号：US20240153770A1

公开(公告)日：2024-05-09

申请号：US18054083

申请日：2022-11-09

Applicant: Tokyo Electron Limited

Inventor： Eric Chih-Fang Liu ,  David L. O'Meara

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0332 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144

Abstract: A method of forming a semiconductor structure includes forming a first mandrel layer over a target layer, forming a second mandrel layer over the first mandrel layer, and patterning a mandrel by etching the second mandrel layer and the first mandrel layer. The first mandrel layer has a first etch rate and the second mandrel layer has a second etch rate less than the first etch rate.

公开(公告)号：US11931923B2

公开(公告)日：2024-03-19

申请号：US17115955

申请日：2020-12-09

Applicant: Kioxia Corporation

Inventor： Takeharu Motokawa ,  Hideaki Sakurai ,  Noriko Sakurai ,  Ryu Komatsu

IPC: G03F7/00 ,  B29C33/38 ,  B29L31/00 ,  H01L21/027

CPC classification number: B29C33/3842 ,  G03F7/0002 ,  B29K2905/08 ,  B29K2907/04 ,  B29L2031/757 ,  H01L21/0271

Abstract: A method of manufacturing a template, has: preparing a substrate containing quartz and having a surface, the surface including a protrusion and a depression; and processing the depression. The processing of the depression includes: a first step of forming a film on the surface, the film including a first region and a second region, the first region being provided on the protrusion, and the second region being provided on a bottom of the depression and being thinner than the first region; a second step of removing the second region with the first region partly remaining to expose the bottom of the depression; and a third step of processing the exposed part of the depression using a mask made of the remainder of the first region.

公开(公告)号：US11899360B2

公开(公告)日：2024-02-13

申请号：US16807606

申请日：2020-03-03

Applicant: KIOXIA CORPORATION

Inventor： Masaki Mitsuyasu ,  Kazuya Fukuhara

IPC: G03F7/00 ,  H01L21/027

CPC classification number: G03F7/0002 ,  H01L21/0271

Abstract: An imprinting method includes placing a template onto non-solidified resin that is applied onto a surface of a substrate, such that the non-solidified resin extends into a pattern of the template in a surface direction of the substrate, starting first alignment operation to align the template with the substrate using a first alignment mark at a first timing, and starting a second alignment operation to align the template with the substrate using a second alignment mark at a second timing after the first timing. The first timing is when the non-solidified resin has extended into the first alignment mark and not yet into the second alignment mark. The second timing is when the non-solidified resin has extended into the first and second alignment marks.

公开(公告)号：US11892775B2

公开(公告)日：2024-02-06

申请号：US17676235

申请日：2022-02-21

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Shimizu ,  Tetsuya Kamimura

IPC: G03F7/32 ,  G03F7/30 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027 ,  B65D25/14 ,  B65D85/00 ,  H01L21/308

CPC classification number: G03F7/32 ,  B65D25/14 ,  B65D85/00 ,  B65D85/70 ,  G03F7/16 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/308

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

公开(公告)号：US20230420291A1

公开(公告)日：2023-12-28

申请号：US18177979

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Masatoshi TERAYAMA

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/00

CPC classification number: H01L21/76817 ,  H01L21/0271 ,  H01L21/76877 ,  G03F7/0002

Abstract: A pattern forming method includes: forming a second layer over a first layer; forming a first pattern along a surface of the second layer opposite to the first layer, the first pattern including an inclined portion with a recessed portion; and forming a second pattern on the first layer by performing, with the second layer as a mask, a first etching process to remove a part of the first layer.

公开(公告)号：US20230411157A1

公开(公告)日：2023-12-21

申请号：US18136407

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungkyo Lee ,  Jongin Kang ,  Gyeyoung Kim ,  Youngwoo Kim ,  Yonghan Park ,  Woojin Jung ,  Seunguk Han ,  Juyoung Huh

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L23/16 ,  H01L23/544

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/0228 ,  H01L23/16 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer, a first separation layer, a first mandrel layer, a second separation layer and a second mandrel layer on a substrate; patterning the second mandrel layer to form second mandrel patterns; forming first spacers on the second mandrel patterns; removing the second mandrel patterns; patterning the second separation layer and the first mandrel layer to form first structures; forming a second spacer layer on the first structures and the first separation layer; anisotropically etching the second spacer layer to form second spacers on the first structures, and to form first dummy patterns and align key patterns on the first structures; and spin-coating a spin-on hard mask layer on the first separation layer, wherein the spin-on hard mask layer covers the first structures, the first dummy patterns and the align key patterns.

公开(公告)号：US11823902B2

公开(公告)日：2023-11-21

申请号：US16978961

申请日：2019-03-19

Applicant: Nokia Technologies Oy

Inventor： Ross Lundy ,  Ryan Enright

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/66

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/67248 ,  H01L22/26

Abstract: An apparatus and method which may be used for fabricating nanoscale devices are disclosed. The apparatus comprises measurement means configured to measure swelling of a block copolymer during solvent vapour annealing of the block copolymer. The apparatus also comprises temperature control means configured to receive a control signal indicative of the swelling of the block copolymer. The temperature control means can then control the temperature of the block copolymer as indicated by the control signal.

公开(公告)号：US11817317B2

公开(公告)日：2023-11-14

申请号：US17079916

申请日：2020-10-26

Applicant: Brewer Science, Inc.

Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

IPC: H01L21/033 ,  G03F1/46 ,  H01L21/027

CPC classification number: H01L21/0332 ,  G03F1/46 ,  H01L21/0271

Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.