Acoustic transducer unit, method for manufacturing the same, and acoustic transducer

    公开(公告)号:US12162036B2

    公开(公告)日:2024-12-10

    申请号:US17772263

    申请日:2021-05-20

    Abstract: The present disclosure provides an acoustic transducer unit and a manufacturing method thereof, and an acoustic transducer, the acoustic transducer unit includes: a base substrate; a first electrode on the base substrate; a support pattern on a side of the first electrode away from the base substrate, which is enclosed into an accommodation groove, at least one release groove and at least one connection groove, an orthographic projection of the release groove on the base substrate is spaced apart from that of the accommodation groove on the base substrate, the connection groove is between the accommodation groove and the release groove to communicate them; a diaphragm pattern on the side of the first electrode away from the base substrate and capable of vibrating in the accommodation groove; a filling pattern in the release groove; a second electrode on a side of the diaphragm pattern away from the base substrate.

    Thin film transistor, display apparatus, and method of fabricating thin film transistor

    公开(公告)号:US12142696B2

    公开(公告)日:2024-11-12

    申请号:US17599688

    申请日:2020-12-21

    Abstract: A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.

    Acoustic transducer and driving method thereof

    公开(公告)号:US11533558B2

    公开(公告)日:2022-12-20

    申请号:US17259245

    申请日:2020-03-30

    Abstract: An embodiment of the present disclosure provides a method for driving an acoustic transducer, including: obtaining a reference electrical signal according to a first electrical signal output by a first acoustic transducer element in a case where sound waves are not received by the first acoustic transducer element; obtaining an actual detected electrical signal according to a second electrical signal output by a second acoustic transducer element in a case where sound waves are received by the second acoustic transducer element; and performing a noise reduction process on the actual detected electrical signal according to the reference electrical signal to obtain a noise-reduced signal as a final output electrical signal of the second acoustic transducer element in a case where sound waves are received by the second acoustic transducer element. An embodiment of the present disclosure further provides an acoustic transducer.

    THIN FILM TRANSISTOR, DISPLAY APPARATUS, AND METHOD OF FABRICATING THIN FILM TRANSISTOR

    公开(公告)号:US20220399465A1

    公开(公告)日:2022-12-15

    申请号:US17599688

    申请日:2020-12-21

    Abstract: A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.

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