摘要:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
摘要:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
摘要:
A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of the pattern in a two-dimensional plane from the two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge fluctuation data by calculating a difference between the set of edge points and the approximation edge; and a correlation between a first portion of the edge fluctuation data and a second portion of the edge fluctuation data.
摘要:
A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of said pattern in a two-dimensional plane from said two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge roughness data by calculating a difference between the set of edge points and said approximation edge; and a correlation between a first portion of the edge roughness data and a second portion of the edge roughness data.
摘要:
The present invention provides a circuit pattern edge inspection method of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method.
摘要:
A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion.
摘要:
A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要:
An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
摘要:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.