Abstract:
A process for heat-pressing a tape on a plastic carrier for a chip primarily comprises heating the plastic carrier to a predetermined temperature ranging from about 60 degrees centigrade to about 150 degrees centigrade so that an adhesive provided on the tape for adhering to the plastic carrier is melted such that the adhesive is in an optimum melted state and provides preferable adhesion force.
Abstract:
A copper fuse structure for integrated circuit employs two copper pads formed over a semiconductor substrate. The two copper pads are electrically insulated by dielectrics. An aluminum line is utilized to cover and electrically connect the two copper pads.
Abstract:
A Subscriber Identity Module (SIM) card control apparatus applied to a mobile communication device is provided. The mobile communication device has a first SIM card and a second SIM card. The SIM card control apparatus includes a judgment unit, a SIM card controller and a switch device. The judgment unit is used to generate a selection signal according to a to-be-accessed SIM card among the first and the second SIM cards. The SIM card controller transmits signals via a group of signal lines. The switch device is used to selectively connect the group of signal lines to the first SIM card or the second SIM card according to the selection signal.
Abstract:
A method for improving the resolution of optic lithographic is disclosed. The method includes a step of forming an etched layer on the substrate, an inorganic photoresist layer is spun-on the etched layer, and an atomic layer on the inorganic photoresist layer. Then, a deep ultraviolet light is illuminated to the inorganic photoresist layer such that the acid molecular is formed from inorganic photoresist layer. Next, the atomic layer is catalyzed by acid molecular and converted to metallic oxide by active oxygen atom. After oxidation, the oxide pattern can be obtained and it is easy by etching process.
Abstract:
A method of photolithography. An anti-reflective coating is formed on the conductive layer. An nitrogen plasma treatment is performed. A photo-resist layer is formed and patterned on the anti-reflective coating. The conductive layer is defined. The photo-resist layer is removed. The anti-reflective layer is removed by using phosphoric acid.