公开(公告)号：US20060024621A1

公开(公告)日：2006-02-02

申请号：US11182066

申请日：2005-07-15

申请人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

发明人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

IPC分类号： G03F7/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.

摘要翻译： 本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。 在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。 第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间​​提供切口。 第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。 第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。 要制造的结构由第一部分结构和第二部分结构组成。

公开(公告)号：US07491474B2

公开(公告)日：2009-02-17

申请号：US11106719

申请日：2005-04-15

申请人： Christoph Nölscher

发明人： Christoph Nölscher

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/34 ,  G03F1/32

摘要： Masks having various types of structures, such as CPL, HTPSM, or CoG structures, are without positional error with respect to one another by defining positions of the structures on the mask by a single mask lithography step. A patterned absorber layer forms in a first region, the opaque and transparent sections of the CoG structures and, in a second region, the CPL structures by serving as a hard mask for the etching of the CPL structures for example, as trenches in the mask substrate.

摘要翻译： 具有各种类型结构的掩模，例如CPL，HTPSM或CoG结构，通过通过单个掩模光刻步骤在掩模上限定结构的位置而相对于彼此没有位置误差。 图案化的吸收层形成在第一区域中，CoG结构的不透明部分和透明部分，并且在第二区域中，通过作为用于蚀刻CPL结构的硬掩模来形成CPL结构，例如作为掩模中的沟槽 基质。

公开(公告)号：US07070887B2

公开(公告)日：2006-07-04

申请号：US10205552

申请日：2002-07-25

申请人： Christoph Nölscher

发明人： Christoph Nölscher

IPC分类号： G03F9/00

CPC分类号： G03F1/32 ,  G03F1/30

摘要： A photolithographic mask is based on a combination of a half-tone phase mask and an alternating phase mask such that when radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partly transmissive and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithographic mask. In particular, the advantages can be obtained with only one absorber material and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure.

公开(公告)号：US07011936B2

公开(公告)日：2006-03-14

申请号：US10331641

申请日：2002-12-30

申请人： Christoph Nölscher ,  Armin Semmler ,  Günther Czech

发明人： Christoph Nölscher ,  Armin Semmler ,  Günther Czech

IPC分类号： G03C5/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70458 ,  G03F7/70466

摘要： A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

公开(公告)号：US06680151B2

公开(公告)日：2004-01-20

申请号：US10174646

申请日：2002-06-18

申请人： Michael Heissmeier ,  Markus Hofsäss ,  Burkhard Ludwig ,  Molela Moukara ,  Christoph Nölscher

发明人： Michael Heissmeier ,  Markus Hofsäss ,  Burkhard Ludwig ,  Molela Moukara ,  Christoph Nölscher

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90° corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180°, are separated by a narrow slot running approximately at 45° toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45°, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180° phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.

摘要翻译： 描述了一种交替相位掩模，其中通过在T图案结构的90°角之一处产生相位跳跃来避免在T图案结构的情况下发生的T相冲突的传播。 产生180°相互相位差的第一透明区域和第二透明区域段通过大致45度向T图案结构的拐角延伸的窄槽分隔开。 包含由45°运行的槽隔开的透明区域段的结构也可以设置在T结构的另一个角上，为每个T冲突提供解决方案。 用于消除由180°相位跳跃人为产生的暗线的修剪掩模是常规的掩模，并且不需要额外的着色。 此外，由于修剪开口的数量少，对准误差最小。